Stochastic Ornstein–Uhlenbeck Capacitors

We introduce and study a class of random capacitor systems which are both charged and discharged stochastically. A capacitor is fed by a random inflow with stationary and independent increments. Discharging occurs according to a Markovian rate which is linear in the capacitors level. The resulting capacitor dynamics are Markovian, stochastically cyclic, and regenerative. We coin these systems Lévy-charged Ornstein–Uhlenbeck capacitors. Various random quantities associated with these systems are analyzed, including: the time-to- discharge; the duration of the charging cycle; the trajectory and the peak height of the capacitor level during a charging cycle; and, the capacitors stationary equilibrium level. Furthermore, we show that there are sharp distinctions between these capacitor systems and corresponding standard Lévy-driven Ornstein–Uhlenbeck systems.     

Nanoporous silicon doped by Cu for gas-sensing applications

The effect of hydrogen sulphide on the current–voltage characteristics of metal–insulator–semiconductor (MIS) structures based on nanoporous silicon (Si_nanopor) under copper doping has been investigated. Scanning electron (SEM), atomic force (AFM) and optic microscopes and/or secondary ion mass spectroscopy (SIMS) were used to obtain detailed characterisation of copper cluster distribution present at the surface and pores, respectively. SIMS spectra reveal that finite gradient in copper distribution along the pores and oxidation of nanoporous silicon simultaneously can be obtained successfully under electroless deposition process. It was also shown that the doping of nanoporous silicon by Cu leads to enhanced hydrogen sulphide sensitivity of MIS structures even without catalytic active top electrodes (for example, Pd) at room temperature. Furthermore, for different types of familiar MIS structures based on nanoporous silicon, e.g., MIS structures doped or undoped by copper and by using Pd metal electrodes, the hydrogen sulphide detection at room temperature mainly depends on the modification in the height of barrier of hetero- (Al–Cu–Si_nanopor–c-Si) or Schottky-like (Pd–Cu–Si_nanopor–c-Si) structures resulting the chemical interaction of molecular H₂S gas with copper clusters at the surface and in the pores. It is demonstrated that MIS structures based on the nanoporous silicon with copper doping are more sensitive to H₂S action at room temperature. In addition, the physical mechanism explaining the observed phenomena is also discussed.     

含油废水紫外荧光信息管理系统的开发

针对含油废水的荧光信息管理,基于管理信息系统(MIS)系统,根据面向对象的程序设计要求,分析了含油废水紫外荧光信息管理系统的建设目标、体系结构、数据组织、模块功能等,使用Visual FoxPro开发了用于典型行业的含油废水紫外荧光信息管理系统,实现了对样本进行处理时信息的输入、查询、删除、对比以及数据输出等功能.使得...     

Internet与管理信息系统的变革

本文阐述了Ｉｎｔｅｒｎｅｔ／Ｉｎｔｒａｎｅｔ的有关概念和技术，分析了传统ＭＩＳ的不足与缺陷，并且结合ＭＩＳ的特点和Ｉｎｔｅｒｎｅｔ／Ｉｎｔｒａｎｅｔ的技术，提出了一种新型的ＭＩＳ结构。     

Coral reef-like polyanaline nanotubes prepared by a reactive template of manganese oxide for supercapacitor electrode

Coral reef-like PANI nanotubes composed of nanopaticles were successfully synthesized by a reactive template of manganese oxide.The structure was characterized by using SEM,TEM,and FT-IR,and the supercapacitive behaviors of these nanotubes were investigated with cyclic voltammetry（CV）,and charge-discharge tests,respectively.A maximum specific capacitance of 533 F/g could be achieved in 1mol/L aqueous H₂SO₄ with the potential range of -0.2 to 0.8 V（vs.the saturated calomel electrode） in a half-cell setup configuration for PANI electrode,suggesting its potential application in the electrode material for electrochemical capacitors.     

Optimization of control setting and size of shunt capacitors on distribution feeders

Loads on electric utility systems have two components: active power (measured in kilowatts) and reactive power (measured in kilovars). Active power has to be generated at the power plant, whereas reactive power can be provided by either power plants or capacitors. It is a well-known fact that shunt power capacitors are the most economical source to meet the reactive power requirements of inductive loads and transmission lines operating at a lagging power factor.This paper describes new contributions to the problem of optimization of size and control setting of shunt capacitors on distribution feeders, so that the losses along the feeder are minimized. The variation of the KVAR of the load on the feeder with the distance from the substation is assumed to be linear. The parameters of this function are estimated from the available KVAR loading on the feeder first by using least-square techniques and then by using least-absolute-value parameter estimation techniques. The results obtained are compared with that obtained if the current profile is assumed to be uniformly distributed on the feeder. Our results show that the optimum size of the capacitor bank as well as its optimum location depend on the parameters of the model used for the load. Also, our results show a large saving in the size of the capacitor banks used with a considerable per-unit-loss reduction along the feeder.This work was supported by the National Science and Engineering Research Council of Canada, Grant No. A4146. The first author acknowledges the help received from Engineer Samy Soliman for reviewing all the mathematical expressions in this paper.     

中国花卉业信息化管理的初步研究

本文针对中国花卉行业提出的大生产，大市场，大流通的产业格局，分析了中国花卉行业建立全国性的信息管理的必要性和紧迫性，并提出了系统开发的初步设想。     

D/A Converters and Iterated Function Systems

This paper discusses A/D and D/A converters as applications of iterated function systems. We describe operation of basic converters in terms of iterate function systems and introduce typical examples for binary and Gray encodings/decodings. We then comment that converters in the field of analog signal processing have different character from iterated function systems in the field of nonlinear dynamical systems. Simple implementation circuits for the binary and Gray D/A converters are also shown.     

Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

This article reviews the current status of high-density capacitor for volatile memory devices. The dielectric properties for both the Ta₂O₅ film and the (Ba, Sr)TiO₃ (BST) dielectric materials using either the metal organic chemical vapor deposition (MOCVD) or the atomic layer deposition (ALD) are reviewed briefly. New challenges of dielectric material for the next generation, and serious problems emerged during integration to date using Ta₂O₅ and BST. The material characteristics of many electrode materials for the high dielectric materials are introduced. We present the basic properties and integration issued for MOCVD-ruthenium (Ru). The second part of this review summarized the failure mechanisms from barrier properties of previously reported diffusion barriers and emphasizes new design concepts of diffusion barrier for high-density memory devices. Finally, the future direction for a diffusion barrier to advance high-density memory capacitors is suggested.