Nano-composite LiMnPO4 as new insertion electrode for electrochemical supercapacitors

Nano-composite olivine LiMnPO₄ (nC-LMP) was found to exhibit facile pseudo-capacitive characteristics in aqueous as well as non-aqueous electrolytes. We demonstrated employing nC-LMP as positive electrode in hybrid electrochemical capacitors namely Li-Ion hybrid capacitors (LIC). Adapting a simple CVD technique, nano-crystallites of LiMnPO₄ were coated with carbon monolayers of ∼2 nm thick to circumvent its poor intrinsic electronic conductivity. The novelty is that the single crystallites were intimately covered with carbon ring and networked to the neighboring crystallites via the continuous carbon wire-like connectivity as revealed from HRTEM analysis. Single electrode faradic capacitance of 3025 Fg⁻¹ (versus standard calomel reference electrode) was deduced for carbon coated LMP, the highest reported hitherto in Li⁺ aqueous electrolytes. Employing nC-LMP as working electrode versus an activated carbon (AC), we obtained a high specific energy of 28.8 Wh kg⁻¹ with appreciable stability in aqueous electrolytes whereas in nonaqueous electrolyte there is an obvious increase in energy density (35 Wh kg⁻¹) due to wider potential window. That is, a full cell version of LIC, AC|Li⁺|LMP, was fabricated and demonstrated its facile cycling characteristics via removal/insertion of Li⁺ within nC-LMP (positive electrode) and the electrosorption of Li⁺ into mesoporous carbon (AC) (negative electrode). Such cells ensured a typical battery-like charging and EDLC-like discharging characteristics of LIC type electrochemical capacitors (ECs) which are desired to enhance safety and energy densities.     

Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

Thin-film multi-layer ceramic capacitors (MLCCs) were prepared using high-dielectric constant Bi₂Mg_2/3Nb_4/3O₇ thin-films deposited at room temperature via radio-frequency magnetron sputtering. The multi-layer capacitors, in sizes 0402, 0603 and 1005, were well equipped with both inner and outer Cu electrodes. The capacitances of the bi-layer capacitors were twice that of the single-layer version in sizes 0402, 0603, and 1005. The 200 nm-thick Bi₂Mg_2/3Nb_4/3O₇ thin-films would be suitable for thin-film multi-layer capacitor applications.     

Carbon-coated Li3VO4 with optimized structure as high capacity anode material for lithium-ion capacitors

Due to the high capacity, moderate voltage platform, and stable structure, Li₃VO₄ (LVO) has attracted close attention as feasible anode material for lithium-ion capacitor. However, the intrinsic low electronic conductivity and sluggish kinetics of the Li⁺ insertion process severely impede its practical application in lithium-ion capacitors (LICs). Herein, a carbon-coated Li₃VO₄ (LVO/C) hierarchical structure was prepared by a facial one-step solid-state method. The synthesized LVO/C composite delivers an impressive capacity of 435 mAh/g at 0.07 A/g, remarkable rate capability, and nearly 100% capacity retention after 500 cycles at 0.5 A/g. The superior electrochemical properties of LVO/C composite materials are attributed to the improved conductivity of electron and stable carbon/LVO composite structures. Besides, the LIC device based on activated carbon (AC) cathode and optimal LVO/C as anode reveals a maximum energy density of 110 Wh/kg and long-term cycle life. These results provide a potential way for assembling the advanced hybrid lithium-ion capacitors.     

Mesoporous carbon material as cathode for high performance lithium-ion capacitor

The mesoporous carbon material with large pore volume and high surface area by a simple situ MgO template method is synthesized, which is utilized as cathode to assemble a high performance lithium ion capacitor.     

水热法合成α-MnO2纳米棒及其电化学性能

以KMnO4、氧化石墨(GO)和硫酸为原料,在120℃水热条件下3 h成功合成了直径为10~20 nm,长度为300~400 nm的α-MnO2纳米棒。研究发现GO的引入降低了纳米棒的制备温度,缩短了反应时间。电化学测试结果表明,在1 mol.L-1Na2SO4中性水系电解液中,该纳米棒表现出良好的电容性能,当扫描速率分别为2 mV.s-1和5 mV.s-1时,比电容分别为276 F.g-1和240F.g-1;该纳米材料是一种潜在的电化学电容器电极材料。     

用电阻定义式求特殊电容器直流电阻

在电子线路工程及其教学过程中,都需要对电容器的直流电阻进行计算.然而,对一些特殊形状的电容器的直流电阻计算,普遍采用的电流密度法是比较麻烦的.本文根据电阻定义式,结合电阻的串联和并联的简洁关系,简单明了地对球冠形电容器、柱冠形电容器和正多棱柱形电容器等的直流电阻进行了计算,并给出相应的定量表达式.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

SrTiO3金属-绝缘体-半导体结构的介电与界面特性

采用金属有机分解法在p型Si衬底上制备了SrTiO3（STO）薄膜.研究了STO薄膜金属 绝缘体 半导体(MIS)结构的介电和界面特性.结果表明，STO薄膜显示出优异的介电性能，在10kHz处的介电常数约为105，损耗低于001，这来源于多晶结构和良好的结晶性；MIS结构中的固定电荷密度Nf和界面态密度Dit分别约为15×1012cm-2和(14—35)×1012cm-2eV-1，这主要与Si/STO界面处形成的低介电常数界面层有关. 关键词： SrTiO3薄膜 MIS结构 介电性能 Si/STO界面     

Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.