Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

Monte Carlo simulation of magnetic phase transitions in Mn-doped ZnO

The magnetic properties of Mn-doped ZnO semiconductor have been investigated using the Monte Carlo method within the Ising model. The temperature dependences of the spontaneous magnetization, specific heat and magnetic susceptibility have been constructed for different concentrations of magnetic dopant Mn and different carrier concentrations. The exact values of Mn concentration and carrier concentration at which high temperature transition occurs are determined. An alternative for the explanation of some controversies concerning the existence and the nature of magnetism in Mn diluted in ZnO systems is given. Other features are also studied.     

Multiscale modeling of the effect of carbon nanotube orientation on the shear deformation properties of reinforced polymer-based composites

A combination of molecular dynamics (MD), continuum elasticity and FEM is used to predict the effect of CNT orientation on the shear modulus of SWCNT-polymer nanocomposites. We first develop a transverse-isotropic elastic model of SWCNTs based on the continuum elasticity and MD to compute the transverse-isotropic elastic constants of SWCNTs. These constants are then used in an FEM-based simulation to investigate the effect of SWCNT alignment on the shear modulus of nanocomposites. Furthermore, shear stress distributions along the nanotube axis and over its cross-sectional area are investigated to study the effect of CNT orientation on the shear load transfer.     

Optimal velocity difference model for a car-following theory

In this Letter, we present a new optimal velocity difference model for a car-following theory based on the full velocity difference model. The linear stability condition of the new model is obtained by using the linear stability theory. The unrealistically high deceleration does not appear in OVDM. Numerical simulation of traffic dynamics shows that the new model can avoid the disadvantage of negative velocity occurred at small sensitivity coefficient λ in full velocity difference model by adjusting the coefficient of the optimal velocity difference, which shows that collision can disappear in the improved model.     

Quantum game interpretation for a special case of Parrondo’s paradox

By using the discrete Markov chain method, Parrondo’s paradox is studied by means of theoretical analysis and computer simulation, built on the case of game AB played in alternation with modulus M=4. We find that such a case does not have a definite stationary probability distribution and that payoffs of the game depend on the parity of the initial capital. Besides, this paper reveals the phenomenon that “processing in order produces non-deterministic results, while a random process produces deterministic results”. The quantum game method is used in a further study. The results show that the explanation of the game corresponding to a stationary probability distribution is that the probability of the initial capital has reached parity.     

不同控制参数下的弹簧摆

通过拉格朗日方程得出弹簧摆系统的动力学方程,并以频率比作为控制参数,利用Matlab软件对不同控制参数和初始摆角下的弹簧摆进行了数值模拟,从而直观地研究了弹簧摆的运动.     

螺旋线型微秒级高压长脉冲产生器数值模拟

 探索了采用CST软件和PSpice软件进行加速器场分布数值模拟的方法,利用该方法可方便地获取设备内部动态场分布图及动态电压变化规律。针对螺旋线型μs级高压长脉冲产生器系统建立了数值模拟模型,给出了详细的模拟步骤及结果。分析表明,利用场分布模拟方法获取的电压变化规律与电路模拟方法获取的结果是一致的。基于CST模拟方法,可以给出螺旋线及主开关等电气结构的瞬态电场分布,场强增强点主要出现在螺旋带的外沿及金属电极连接处,在介质支撑内部也有较高的场强分布。     

任意长度喷管型面设计方法在气动激光器喷管设计中的应用

 将一种新的任意长度喷管型面设计（ALN）方法应用于气动激光器喷管型面设计,在相同的喷管出口设计马赫数、喷管喉部高度及喷管扩张段长度条件下,设计了4条ALN方法喷管型面,并和一条最短长度（MLN）喷管型面作对比,采用2维气动激光器增益场仿真方法对5个喷管的小信号增益场进行仿真。计算结果表明:ALN方法可以有效地实现增益场分布的控制,选择合理的设计参数得到的喷管长度比MLN喷管更短,小信号增益更大。