Structural evolution at the initial growth stage of perylene on Au(1 1 1)

We report on the structural evolution at the initial growth stage of perylene thin films on Au(1 1 1) surface. Scanning tunneling microscopy and spectroscopy have been employed to investigate the structural and electronic properties at 78 K. Rapid molecular diffusion was observed at low submonolayer coverage. Molecules form an ordered structure at monolayer coverage. For the second layer, impinging molecules nucleate into molecular islands with an ordered intermediate structure.     

CO adsorption on epitaxially grown Pt layers on Ru(0 0 0 1)

The adsorption of CO on epitaxially grown Pt films of variable thickness has been studied using infrared-absorption spectroscopy, scanning tunnelling microscopy and thermal desorption spectroscopy. Depending on the number of pseudomorphic Pt layers (N_Pt = 1-4) the internal and external CO stretching modes (ν_C-O and ν_Pt-CO, respectively) display characteristic frequency shifts due to the vanishing influence of the underlying Ru(0 0 0 1) substrate and Pt/Ru interface. For thicker layers (N_Pt ? 5) when this influence has become negligible, the compressive stress within the Pt film is gradually relieved, leading to a dislocation network. The structural heterogeneity during the ongoing relaxation process of the Pt film is reflected in the ν_C-O line shape; no line broadening is observed for either pseudomorphic or very thick films (N_Pt ? 15). For N_Pt ? 3 the adsorption of CO on Pt/Ru(0 0 0 1) films closely resembles CO on Pt(1 1 1), with residual deviations in line position and desorption temperatures gradually converging to zero.     

Surface layer self diffusion in icosahedral Al-Pd-Mn quasicrystals

The self diffusion of Mn and Pd in a single grain icosahedral Al_69.9Pd_20.5Mn_9.6 quasicrystal has been determined by low energy ion scattering (LEIS). The diffusion was determined by depositing different elements (Pd, Mn) on the surface and measuring the rate of change in surface composition as a function of temperature by LEIS. The surface composition was monitored over the temperature range of 355-575 K for Mn and 440-745 K for Pd and compared to model calculations to allow the activation energy for diffusion to be determined. Activation energies of 0.20 ± 0.01 eV for Mn and 0.64 ± 0.03 eV for Pd have then been measured for self diffusion in i-Al-Pd-Mn, respectively. No deviation from Arrhenius behavior was detected in the temperature range covered by the present experiments. From the low values of activation energy we propose that this range of diffusion is phason related, reflecting the specific nature of the icosahedral structure.     

Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10⁻⁷ Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures ≤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.     

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T_s) and oxygen partial pressure (pO₂). The effect of T_s and pO₂ on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T_s and pO₂ on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 °C under 62.3% O₂ pressure were stoichiometric and polycrystalline MoO₃. Films grown at lower pO₂ were non-stoichiometric MoO_x films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO₃ films.     

Oxygen adsorption on a Mo2C(0 0 0 1) surface: Angle-resolved photoemission study

Oxygen adsorption on a C-terminated α-Mo₂C(0 0 0 1) surface has been investigated with Auger electron spectroscopy, low-energy electron diffraction, and angle-resolved photoemission spectroscopy utilizing synchrotron radiation. It is found that the oxygen atoms adsorb on the Mo atoms in the second layer forming a (1 × 1) orthorhombic periodicity. The oxygen adsorption induces a peculiar state around the Fermi level, which is observed at 0.4 eV in the normal-emission spectra. ARPES measurements show that the state is a partially occupied metallic state. The photoionization cross section of the state shows a maximum at the photon energy of 56 eV, which is assigned as originating from the resonance of the Mo 4d photoemission involving Mo 4p → 4d photoexcitation.     

Segregation of Pt at clean surfaces of (Pt, Ni)3Al

Experimental evidence for surface segregation of Pt at (1 1 1) surfaces of ternary (Pt, Ni)₃Al alloys is presented, based upon Auger electron spectroscopy, low energy ion scattering, and angle-resolved X-ray photoelectron spectroscopy. Density functional calculations in the dilute limit confirm that Pt segregation is energetically favored.     

Ab initio simulation of the BaZrO3 (0 0 1) surface structure

Electronic and atomic structures of different terminations of the (0 0 1) non-polar orientation of BaZrO₃ surfaces have been studied using first-principles calculations. We found that surface energies at both possible surface terminations, BaO and ZrO₂, were very close. The (0 0 1)-BaO and (0 0 1)-ZrO₂ terminated surfaces have bandgap values smaller than that of a bulk BaZrO₃ crystal. In addition, the relative surface stability has been analyzed as a function of chemical environment.     

Initial stages of oxidation of Cu(1 1 1)

Several surface analysis techniques were combined to study the initial stages of oxidation of Cu(1 1 1) surfaces exposed to O₂ at low pressure (<5 × 10⁻⁶ mbar) and room temperature. Scanning tunneling microscopy (STM) results show that the reactivity is governed by the restructuring of the Cu(1 1 1) surface. On the terraces, oxygen dissociative adsorption leads to the formation of isolated O adatoms and clusters weakly bound to the surface. The O adatoms are located in the fcc threefold hollow sites of the unrestructured terraces. Friedel oscillations with an amplitude lower than 5 pm have been measured around the adatoms. At step edges, surface restructuring is initiated and leads to the nucleation and growth of a two-dimensional disordered layer of oxide precursor. The electronic structure of this oxide layer is characterised by a band gap measured by scanning tunneling spectroscopy to be ∼1.5 eV wide. The growth of the oxide islands progresses by consumption of the upper metal terraces to form triangular indents. The extraction of the Cu atoms at this interface generates a preferential orientation of the interface along the close-packed directions of the metal. A second growth front corresponds to the step edges of the oxide islands and progresses above the lower metal terraces. This is where the excess Cu atoms extracted at the first growth front are incorporated. STM shows that the growing disordered oxide layer consists of units of hexagonal structure with a first nearest neighbour distance characteristic of a relaxed Cu-Cu distance (∼0.3 nm), consistent with local Cu₂O(1 1 1)-like elements. Exposure at 300 °C is necessary to form an ordered two-dimensional layer of oxide precursor. It forms the so-called “29” superstructure assigned to a periodic distorted Cu₂O(1 1 1)-like structure.     

Prediction of structure-dependent charge transfer rates for a Li atom outside a Si(0 0 1) surface

We investigate the broadening of the 2s energy level of a Li atom outside a Si(0 0 1) surface using a first principles approach. The covalent nature of the Si surface produces large variations in Li energy level widths as a function of lateral position across the surface. The widths above symmetric Si dimers are predicted to be much larger than above buckled Si dimers, suggesting that charge transfer will occur primarily above symmetric dimers. We discuss the ramifications of our results on the controversy surrounding the relative abundance of the buckled vs. symmetric dimers on the Si surface.