Transfer of quantum entangled states between superconducting qubits and microwave field qubits

Transferring entangled states between matter qubits and microwave-field (or optical-field) qubits is of fundamental interest in quantum mechanics and necessary in hybrid quantum information processing and quantum communication. We here propose a way for transferring entangled states between superconducting qubits (matter qubits) and microwave-field qubits. This proposal is realized by a system consisting of multiple superconducting qutrits and microwave cavities. Here, „qutrit” refers to a three-level quantum system with the two lowest levels encoding a qubit while the third level acting as an auxiliary state. In contrast, the microwave-field qubits are encoded with coherent states of microwave cavities. Because the third energy level of each qutrit is not populated during the operation, decoherence from the higher energy levels is greatly suppressed. The entangled states can be deterministically transferred because measurement on the states is not needed. The operation time is independent of the number of superconducting qubits or microwave-field qubits. In addition, the architecture of the circuit system is quite simple because only a coupler qutrit and an auxiliary cavity are required. As an example, our numerical simulations show that high-fidelity transfer of entangled states from two superconducting qubits to two microwave-field qubits is feasible with present circuit QED technology. This proposal is quite general and can be extended to transfer entangled states between other matter qubits (e.g., atoms, quantum dots, and NV centers) and microwave- or optical-field qubits encoded with coherent states.     

Quasinormal modes and absorption of a massless scalar field for the magnetic Gauss–Bonnet black hole

We study the massless scalar quasinormal frequencies of an asymptotically flat static and spherically symmetric black hole with a nonzero magnetic charge in four-dimensional extended scalar-tensor-Gauss–Bonnet theory. The results show that the real part of the quasinormal frequency becomes larger and the imaginary part becomes smaller with increasing the magnetic charge or the angular harmonic index. The existence of magnetic charges will reduce the damping of scalar perturbation, but increase the frequency. We also study the absorption cross-section of the scalar field in this black hole. We find that its curve will become lower as the magnetic charge increases, i.e. the magnetic charge will weaken the absorption capacity of the black hole. Meanwhile, the high-frequency limit of the total absorption cross-section is just the area of black hole shadow.     

Natural color low-level-light EBAPS imaging system based on three-color LCTF北大核心CSCD

The high-sensitivity electron bombarded active pixel sensor (EBAPS) not only has the characteristics of high gain and high sensitivity of vacuum imaging devices, but also has the digital characteristics of solid-state imaging devices, which greatly improves the level of night vision imaging. A natural color low-level-light EBAPS imaging system was built based on three-color liquid crystal tunable filter (LCTF). According to the characteristics of low-level-light images, the color enhancement processing such as grayscale stretching, white balance, and color correction was performed on the color images obtained by the system. The experimental results show that the system can realize the natural low-illumination color imaging that reflects the color characteristics of the scene itself, which can effectively improve the observation effect of the characteristics of the target scene at night, and can realize the color imaging under 5×10−4 lx illumination. © 2022 Editorial office of Journal of Applied Optics. All rights reserved.     

最近邻弱交换相互作用对纳米管中Blume-Capel模型热学性质的研究

利用有效场理论研究了纳米管上最近邻弱交换相互作用下spin-1纳米管中Blume-Capel模型的内能、比热和自由能,得到了系统的内能、比热和自由能与最近邻弱交换相互作用和晶场的关系。结果表明：最近邻弱交换相互作用和晶场强度等诸多因素相互竞争,使系统表现出比 = = =1时的BC模型更为复杂的热学性质;系统内能随温度的变化曲线表现出不连续性;比热随温度的变化出现奇异性;高温对自由能的影响更加明显。     

最近邻强交换相互作用对spin-1纳米管热力学性质的影响

利用有效场理论研究了纳米管上最近邻强交换相互作用下Blume-Capel模型的内能、比热和自由能,得到了系统的内能、比热和自由能与最近邻强交换相互作用、晶场强度和温度的关系.结果表明:最近邻强交换相互作用、晶场强度和温度等诸多因素相互竞争,使系统表现出比J_1=J_2=J=1时的BC模型更为丰富的热力学性质;系统内能随温度的变化曲线表现出不连续性;比热随温度的变化出现奇异性;一定条件下,基态时的自由能会发生突变.     

Local stability analysis of a low-dissipation cyclic refrigerator*

We study the local stability near the maximum figure of merit for the low-dissipation cyclic refrigerator,where the irreversible dissipation occurs not only in the thermal contacts but also the adiabatic strokes.We find that the bounds of the coefficient of performance at a maximum figure of merit or maximum cooling rate in the presence of internal dissipation are identical to those in the corresponding absence of internal dissipation.Using two different scenarios,we prove the existence of a single stable steady state for the refrigerator,and clarify the role of internal dissipation on the stability of the thermodynamic steady state,showing that the speed of system evolution to the steady state decreases due to internal dissipation.     

激光辐照VO2薄膜温度场分布及透射特性研究

为了探究VO₂薄膜受激光辐照的温度场分布,以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值,并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真,然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO₂薄膜利用分子束外延法在Al₂O₃基底上制备得到。仿真结果表明,激光功率密度为25 W·mm^-2时,50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO₂薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 W·mm^-2和5.39 W·mm^-2。30 nm厚VO₂薄膜对1 064 nmn激光的透过率调制深度约为13%,对3 459 nm激光透过率调制深度约62%,说明VO₂薄膜对近红外透过率调制特性不明显。     

平栅极结构碳纳米管场发射性能实验

研究了碳纳米管(CNT)场发射显示器(FED)三电极结构的平栅极结构,得到了进一步降低场致发射的开启电压和缩小动态调制电压范围的方法,同时也为相关的场发射安全操作提供了借鉴。实验表明:二极结构场发射调制电压范围较大,调制电压达上千伏,而在三电极的平栅极结构中通过调节阳极电压不仅可控制显示亮度,还对栅极调制电路有保护作用。适当升高阳极电压、适当缩短阴极和阳极之间的距离以及阴栅极经老化后可减小栅极调制电压, 同时还能有效的降低场致发射的动态调制电压的范围。这对新一代的显示器研制提供帮助。     

强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了界面态曲线和退火曲线。实验显示，经过强脉冲X射线对Si-SiO₂界面进行的辐照，在Si-SiO₂界面感生出新的界面态，感生界面态的增加与辐照剂量成正比，并且易出现饱和现象。总结出了感生界面态密度产额Dit随辐照剂量D变化的分布式，并定性分析了Dit随D变化的行为。随后进行的退火实验表明，强脉冲X射线辐照感生出的界面态越多，退火时这些界面态就消除得越快。退火过程显示有滞后现象，即辐照剂量大的阈电压漂移，在退火后恢复的绝对值，要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系，定性解释了滞后现象。     

强直流场介质表面次级电子倍增效应的数值模拟研究

通过粒子模拟方法,实现了强直流场下介质表面击穿过程中次级电子倍增效应的数值模拟.具体研究了强直流场场强、介质表面光滑度和次级电子产生率等对次级电子倍增的影响,以及倾斜直流场和外加磁场对次级电子倍增的抑制.结果表明,选择次级电子产生率较低的介质材料和倾斜强直流场可以有效降低次级电子倍增效应的强度,而外加磁场必须超过一定值时才可以有效降低次级电子倍增强度. 关键词： 次级电子倍增 强直流场 介质表面击穿 数值模拟