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81.
Oleg B. Shchekin Peter J. Schmidt Fahong Jin Nate Lawrence Kenneth J. Vampola Helmut Bechtel Danielle R. Chamberlin Gerd O. Mueller 《固体物理学:研究快报》2016,10(4):310-314
Droop, the decrease of efficiency with increased power density, became a major topic with InGaN LEDs, after its introduction in 2007. This paper provides insight into droop in localized center luminescence phosphors, exemplified here by Eu2+ doped materials. This topic is of increasing importance, as high brightness blue LEDs have reached outputs >1 W/mm2. The nonlinearities in phosphor quantum efficiency result in drive‐dependent color point shift and reduction of overall efficiency of phosphor converted white LEDs which utilize Eu2+ activated phosphors. The efficiency quenching can be traced back to two processes, well‐known in laser physics, excited state absorption or/and cross relaxation by Foerster/Dexter transfer. Both processes lead to reduction in phosphor efficiency, but they can be differentiated. Understanding the root cause of efficiency quenching opens ways to minimize the practical consequences. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
82.
Ngo Ngoc Ha Nguyen Truong Giang Tran Ngoc Khiem Nguyen Duc Dung Tom Gregorkiewicz 《固体物理学:研究快报》2016,10(11):824-827
Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si0.2Ge0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO2 host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
83.
Structure and physical properties of BiF3 doped with M=Cr, Cu, Fe, Mn, Ni, Ti, V and Co are calculated by the DFT+U method. Effect of metal doping on the electronic structure and optical response of host materials BiF3 is investigated systematically. New energy levels are formed and located within the band gap, which could decrease the recombination rate of e−/h+ pairs. Furthermore, transition metal doping extends the optical absorption of BiF3 to the visible spectral region. 相似文献
84.
85.
We investigate the energy structure of colloidal CdS nanocrystals by measuring the UV–vis absorption spectra. Nanocrystals were synthesized by sol–gel method in a gelatin matrix in the size range from 2.5 to 3.9 (±0.2) nm. In order to interpret the UV–vis absorption spectra we calculate the energy spectrum of electron quasi-stationary states using the model of open nanocrystal as well as the hole stationary spectrum in a two-band approach. It is shown that the main contribution to the absorption spectrum is made by interband transitions 1S3/2→1Se and 1P3/2→1Pe, and its shape is determined by the size distribution of nanoparticles. For this system the estimated values of the effective masses of the heavy hole and light hole are 1.44m0 and 0.28m0, respectively. 相似文献
86.
Synthesis,spatial structure and spectral properties of pyrylo‐4 (thio) squaraines variously substituted in cyclobutene moiety 下载免费PDF全文
Vladimir V. Kurdyukov Aleksei I. Tolmachev Marina L. Dekhtyar Yurii G. Vlasenko Aleksandr N. Chernega 《Journal of Physical Organic Chemistry》2015,28(7):452-459
Synthetic routes have been developed to a number of (thio) squaraine dyes containing the residues of CH‐acids at the central cyclobutene ring. The electronic and spatial structure as well as the chemical conversions and optical behaviour of the compounds obtained have been studied both theoretically and by X‐ray diffraction analysis, 1H NMR and electronic spectroscopy. As shown, the electronic nature and sterical characteristics of the central ring substituents give rise to some general conformational features and crystal packing regularities and also govern the spectral position of the first π–π* absorption band. The structure–property relationships established in the study provide guidance for the purposeful design of deeply coloured (thio) squaraines. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
87.
88.
为了了解水稻中硅的亚显微结构及其紫外吸收特性,根据强酸不会腐蚀SiO2玻璃的事实,选择湿消化方法分离水稻中的硅体。以浓硫酸和硝酸混合液分别处理水稻叶片和稻壳,经多级沉降分离出其中的硅体。X射线光电子能谱结果表明硅体距离表面10 nm以内碳相对质量为35.05%,远高于硅体表面(5.88%),说明硅质壁能够阻止强酸进入硅体内部,避免硅体内氧化,保持硅体结构完整和相对独立的理化性质。电镜显示硅体SiO2结构致密,由1~2 nm的SiO2凝胶粒子粘聚而成,纳米颗粒相互融合组成排列方向一致的纳米棒,内部还有微米尺度(≤1μm)和纳米尺度(≤1~2 nm)的隙孔。颖壳硅体最大吸收位于285 nm;叶片纳米硅对紫外辐射的吸收极其有限,表明水稻颖壳和叶片硅体对紫外辐射具有不同的抵抗机制。 相似文献
89.
90.
The infrared absorption of the ν3 band region of SF6, at temperatures spanning the 130 to 297 K range, has been reexamined using improved instrumentation with one goal: to estimate the broadening of parameters by nitrogen gas. These parameters are compared to previous literature predictions and an extended set of IR cross-sections is proposed and compared to other existing datasets. 相似文献