The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1−xIn_xN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1−xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.     

A possible interplay between electron beams and magnetic fluxes in the Aharonov–Bohm effect

Most studies on the magnetic Aharonov–Bohm (A–B) effect focus on the action exerted by the magnetic flux on the electron beam, but neglect the back-action exerted by the electron beam on the magnetic flux. This paper focuses on the latter, which is the electromotive force ΔU across the solenoid induced by the time-dependent magnetic field of the electron beam. Based on the backaction analysis, we observe that the magnetic A–B effect arises owing to the interaction energy between the magnetic field of the electron beam and the magnetic field of the solenoid. We also demonstrate that the interpretation attributing the magnetic A–B effect to the vector potential violates the uncertainty principle.     

Effective potentials and the onset of quantization in ultrasmall MOSFETs

The connection between the minimum size of an electron wavepacket, and the introduction of an effective potential is discussed. The effective potential approach has a long history of use in trying to transition the gap between classical mechanics and quantum mechanics. An effective potential is one in which the quasi-classical regime is approximated through a density which arises from the effective potential W(x) through exp[ − βW(x)]. The generation of the effective potentialW (x) gives the effects of the onset of quantization in the system. In this paper, we study the use of the effective potential in a triangular well formed between the oxide and the depletion field of the semiconductor. We determine the quantization energy of the carriers in the potential well and their mean set-back from the interface. Finally, we show the connection between the effective potential and the Bohm-derived quantum potentials that have become of interest in simulations.     

B/N掺杂类直三角石墨烯纳米带器件引起的整流效应

基于密度泛函理论结合非平衡格林函数的方法, 研究了硼(氮)非对称掺杂类直三角石墨烯纳米带器件的电子输运性能. 计算结果表明: 单个硼或氮原子取代类直三角石墨烯纳米带顶点的碳原子后, 增强了体系的电导能力, 并且出现了新颖的整流效应. 分析表明: 这是由于硼氮掺杂类直三角石墨烯纳米带器件在正负偏压下分子能级的移动方向和前线分子轨道空间分布的不对称而产生的. 最重要的是, 当左右类直三角石墨烯纳米带的顶端原子同时被硼和氮掺杂后, 体系的整流效应显著增强, 而且出现负微分电阻效应.     

基于嵌入式的工业控制人机界面系统研究

针对工业控制系统网络化和良好人机交互性的需求,构建和开发了基于ARM9微处理器的通用工业控制人机界面系统。硬件部分主要讨论了以S3C2440微处理器为核心的硬件电路设计,外围电路模块包括SDRAM及Flash存储器电路、以太网电路、RS-232/RS-422电路、触摸屏及LCD接口等电路,在分析了硬件系统信号完整性的前提下,完成了6层PCB的设计工作。软件部分主要研究了U-Boot移植和内核裁剪技术,编写了相关的硬件设备驱动程序,设计了基于QT/Embedded的人机界面和相关应用程序。论文研究最终实现了工业控制系统的人机交互和控制需求。     

嵌入Ag纳米颗粒层的DNA忆阻器

构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件, 并对其电流-电压 (I-V)曲线进行测量. 结果表明, 嵌入Ag纳米颗粒层, 不仅可以增强器件的导电性, 而且忆阻特性也显著提高. 当颗粒粒径在15–20 nm范围时, 开-关电流比I_ON/I_OFF能够达到10³. 器件的I-V特性受扫描电压幅值V_A的影响, 随着V_A的增大, 高阻态的电流变化较小, 而低阻态的电流明显增大, 开(或关)电压V_SET (V_RESET)和I_ON/I_OFF增加. 实验还发现, 器件高低阻状态的相互转换取决于外加电场的方向, 说明该忆阻器具有极性.     

半实物仿真中试验总控软件的设计与实现

试验总控软件是应用于半实物仿真中对参试系统进行管理和控制的一种软件,它可以对半实物仿真中的参试系统进行配置,实现对整个试验仿真的管理和监控。解析各参试系统的数据交互协议是试验总控软件对参试系统进行监控和管理的关键功能。通常试验总控软件解析功能代码完全按照各参试系统数据交互协议开发,这样一旦数据交互协议发生更改,解析功能代码需要根据新协议重新开发导致软件重复开发,影响软件开发效率和通用性。为了解决这个问题,文中提出一种试验总控软件设计框架并采用动态解析数据帧技术将解析代码与数据交互协议隔离,不仅提高软件通用性,同时缩短半实物仿真开发周期,减少人力财力开支。     

计算机辅助电子线路实验的思考与探索

本文介绍了EltctronicWorkbench软件和计算机虚拟仪器系统，采用计算机模拟仿真技术对电子线路实验加以辅助设计和探索。     

Optical Add/Drop Multiplexers Based on Fiber Gratings Tuned by Magnetic Fields

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多通道心磁系统标定方法研究

在多通道超导量子干涉器件（SQUID）磁探测系统中,磁场电压转换系数（∂ B/∂ V）是系统的一个重要参数由于SQUID器件和读出电路之间不可避免地存在差异性因此对传感器系统进行系统标定（每个通道的单独标定）显得十分重要本文采用（PCB） 板印制圆形线圈对36通道心磁系统进行标定,并与传统的亥姆霍兹方形线圈产生均匀场的标定方法进行比较结果显示PCB圆形线圈的标定结果 在1.46–1.73 pT·mV^-1 之间,亥姆霍兹方形线圈标定的结果大都在1.56–1.64 pT·mV^-1之间,结果基本一致. 关键词： 超导量子干涉器件 磁探测 磁场-电压转换系数 系统标定