Ultra-high speed all-optical shift registers and their applications in OTDM networks

All-optical shift registers are basic building modules for the development of ultra-high speed optical time division multiplexing networks. In this paper, we review the progress that has been made in this cutting-edge technology, focusing on implementations that exploit the attractive features of semiconductor optical amplifier (SOA)-based interferometric configurations. We present regenerative storage performed with an all-optical recirculating shift register with an inverter at 10 Gb/s using a SOA-assisted Sagnac switch and a second SOA to provide feedback. We demonstrate also an all-optical memory based on the SOA-assisted Ultrafast Nonlinear Interferometer capable of reading/writing 20 Gb/s packets of variable length without data inversion. These registers can find application in the development of two nontrivial complex all-optical circuits of enhanced functionality. The first is an all-optical pseudorandom binary sequence generator for which we describe an efficient design algorithm and propose ways for monitoring and verification. The second is an all-optical error counter for which we address the error detection and evaluation issues using a novel sampling technique. These circuits are key elements for the implementation of a high-speed, all-optical bit error rate tester (BERT), which has the potential to outperform its electronic equivalent and constitute a possible new product for the telecommunications industry.     

单片集成微环反射器可调谐半导体环形激光器理论和数值模型(英)

设计了一种新颖的快速可调谐激光器。这种激光器在恒定电流泵浦的有源微环组成的半导体环形激光器腔外部集成一个可调谐的无源微环反射器,其结构将决定激光器激射腔模的有源腔和无源可调谐部分分离,有助于提高调谐速度。与光栅结构的激光器相比,该激光器结构简单,具有强烈的选模功能,不需要相位匹配部分,输出波长不受调谐部分热效应的影响。基于多模速率方程建立了激光器的理论和数值模型,数值仿真结果表明该激光器能在选取的15个腔模范围内完成数字调谐,且具有40 mA的较低阈值电流和适中的边模抑制比。     

Penta-SiC5 monolayer: A novel quasi-planar indirect semiconductor with a tunable wide band gap

In this paper, by using of the first principles calculations in the framework of the density functional theory, we systematically investigated the structure, stability, electronic and optical properties of a novel two-dimensional pentagonal monolayer semiconductors namely penta-SiC₅ monolayer. Comparing elemental silicon, diamond, and previously reported 2D carbon allotropes, our calculation shows that the predicted penta-SiC₅ monolayer has a metastable nature. The calculated results indicate that the predicted monolayer is an indirect semiconductor with a wide band gap of about 2.82 eV by using Heyd–Scuseria–Ernzerhof (HSE06) hybrid functional level of theory which can be effectively tuned by external biaxial strains. The obtained exceptional electronic properties suggest penta-SiC₅ monolayer as promising candidates for application in new electronic devices in nano scale.     

半导体激光器的自混合散斑干涉测量流体速度

提出了一种简便的激光自混合散斑干涉测量流体速度的方法。根据散斑和法布里-珀罗腔的理论,提出了半导体激光器的自混合散斑干涉模型。研究了流体运动时在半导体激光器内产生的自混合散斑干涉效应(SMPI),给出了激光器输出增益的变化及其概率密度分布。得到了激光自混合散斑干涉平均频率与流体速度之间的关系。模拟计算和实验结果验证了这个关系。利用散斑干涉的平均频率与流体速度的关系测量了高分子材料溶液的速度,并在溶液浓度和背景光变化时,对流体速度进行了测量、比较和分析。实验表明。在溶液浓度不太低时,测量误差小于8％。     

Optical band gap and optical constants in a-Se80Te20−xPbx thin films

The optical constants (absorption coefficient, refractive index, extention coefficient, real and imaginary part of dielectric constant) have been studied for a-Se₈₀Te_20−xPb_x (where x = 0, 2, 6, 10) thin films as a function of photon energy in the wave length range (500–1000 nm). It has been found that the optical band gap increases while the refractive index and the extinction coefficient (k) decreases on incorporation of lead in Se–Te system. The value of absorption coefficient (α) and the extinction coefficient (k) increases, while the value of refractive index (n) decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level.     

Studies on the Electronic Transport Properties of some New Chelate Compounds Containing Siloxane

The temperature dependence of the electrical conductivity and the Seebeck coefficient of some new complex polymeric structures containing metal chelate sequences alternating with silane units were studied. The measurements were performed using thin films deposited from solution. The investigated polymers have interesting semiconducting characteristics. The correlations between these characteristics and the molecular structure of the respective polymers are discussed.     

宽禁带碳化硅单晶衬底及器件研究进展

碳化硅作为第三代宽禁带半导体的核心材料之一,相对于传统的硅和砷化镓等半导体材料,具有禁带宽度大、载流子饱和迁移速度高,热导率高、临界击穿、场强高等诸多优异的性质。基于这些优良的特性,碳化硅材料是制备高温电子器件、高频大功率器件的理想材料。近年来在碳化硅材料生长和器件制备方面取得重大进展,对碳化硅材料特性和生长方法进行回顾,并研究了碳化硅光导开关偏压、触发能量、导通电流之间的关系,以及开关失效情况下电极表面的损伤情况。     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

硅基双势垒金属-绝缘层-金属-绝缘层-半导体隧道发光结

讨论了硅基双势垒金属－绝缘层－金属－绝缘层－半导体（MIMIS）隧道发光结的结构、制备方法及发光特性。所制备的样品最大发光亮度达到1．9cd/m^2、光谱的峰值波长移到了蓝绿光区，表明双势垒MIMIS隧道发光结的性能优于单势垒金属－绝缘层－半导体（MIS）隧道发光结。利用量子力学的共振隧穿效应对它作了较好的解释。     

Application of Autoradiography to the Investigation of New Doping Techniques of Semiconductor Materials

The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process.

These studies are concerned with the following problems:

1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates.

2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation.