硬X射线相位光栅的设计与研制

针对在普通实验室和医院实现40—100keVX射线相衬成像的需求,考虑到成像系统参数、X射线源空间相干特性及光栅衍射效率,设计出硅基相位光栅结构参数.利用我们已发展的光助电化学刻蚀技术研制出直径为5英寸的相位光栅,其空间周期为5.6μm,线宽为2.8μm,深度为40—70μm.在理论分析的基础上,通过提高硅片两端有效工作电压和修正Lehmann电流密度公式,解决了实际刻蚀过程中出现的钻蚀问题.由实验结果可知,本方案对制作大面积高精度相位光栅十分有效。     

高温超导滤波器两种刻蚀方法的研究

在高温超导滤波器的制备过程中,针对所使用的高温超导薄膜的特点,采用了两种刻蚀方法——湿化学刻蚀法和离子束刻蚀法,设计对比了两种刻蚀的制作流程及其优缺点,并用两种方法分别制备了高温超导滤波器,对微波特性做了对比分析。得出离子束刻蚀对超导薄膜的性能影响要小一些,用此方法制备的高温超导滤波器具有更好的微波特性。     

晶体硅太阳电池表面纳米线阵列减反射特性研究

为增强晶体硅太阳电池的光利用率, 提高光电转换效率, 研究了硅纳米线阵列的光学散射性质. 运用严格耦合波理论对硅纳米线阵列在310—1127 nm波段的反射率进行了模拟计算, 用田口方法对硅纳米线阵列的表面传输效率进行了优化. 结果表明, 当硅纳米线阵列的周期为50 nm, 占空比为0.6, 高度约1000 nm时减反射效果最佳; 该结构在上述波段的平均反射率约为2%, 且在较大入射角度范围保持不变. 采用金属催化化学腐蚀法, 于室温、室压条件下在单晶硅表面制备周期为60 nm,占空比为0.53, 高度为500 nm的硅纳米线阵列结构, 其反射率的实验测试结果与计算模拟值相符, 在上述波段的平均反射率为4%—5%, 相对于单晶硅35%左右的反射率, 减反射效果明显. 这种减反射微结构能够在降低太阳电池成本的同时有效减小单晶硅表面的光反射损失, 提高光电转换效率.     

热拉伸和化学腐蚀相结合制备弯曲光纤探针

提出了原子力/光子扫描隧道显微镜(AF/PSTM)系统的关键部分——双功能弯曲光纤探针的制作方法.采用热拉伸与动态、静态两步化学腐蚀相结合的方法制作出AF/PSTM弯曲光纤探针，弯曲角度约为150°，尖端曲率半径优于100nm，锥角范围为60°—90°.将这种双功能弯曲光纤探针应用在新研制的AF/PSTM系统上，同时获得了样品的光学与形貌图像，实现了图像分解. 关键词： 原子力/光子扫描隧道显微镜 光纤探针 热拉伸 化学腐蚀     

超导纳米线单光子探测器件的制备

超导纳米线单光子探测器件(SNSPD)是超导单光子探测系统的核心器件。文中介绍了成功制备的基于5nm厚的NbN超导超薄薄膜的SNSPD器件。器件核心结构为150nm宽的纳米曲折线结构,纳米线条占空比为75%,面积为20μm×20μm。超导纳米线是利用电子束曝光(EBL)技术和反应离子刻蚀(RIE)等工艺技术制备的。所制备的SNSPD样品,在温度3.5K下的临界电流约12.9μA;在1310nm波长光波辐照,12.5μA的偏置电流下,探测效率约0.016%。     

组合刻蚀法制备窄带滤光片列阵

介绍了组合刻蚀法制备窄带滤光片列阵的基本原理和制备工艺,这是一种效率非常高的制备方法,只需N次刻蚀就可以完成2N通道窄带滤光片列阵的制备,而且可以用于制备不同波段窄带滤光片列阵。展示了可见-近红外波段32通道窄带滤光片列阵和中红外波段16通道窄带滤光片列阵的实验结果,其中32通道窄带滤光片列阵的带通峰位基本呈线性分布在774.7~814.2 nm之间,所有滤光片的半峰全宽都非常窄(δλ<1.5 nm),相应于δλ/λ<0.2%,半峰全宽最窄的滤光片达到0.8 nm,相应于δλ/λ<0.1%,其带通峰位λ=794.3 nm;各通道的带通透过率在21.2%~32.4%之间,大部分在30%左右。     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Transmission Electron Microscopic Investigation of the Morphology of High-Speed Spun Poly(Ethylene Terephthalate) Fibers

Permanganic etching was performed on high-speed spun (HSS) and regular fibers of poly(ethylene terephthalate) (PET), and their surface morphologies were investigated via the two-stage carbon replica method using a transmission electron microscope (TEM). The HSS PET fibers, with disordered amorphous regions, showed peculiar surface morphology; many small warts corresponding to the pits of etched disordered amorphous regions were observed. Such unevenness, however, was hardly observed on the surface of the permanganic-etched regular PET fibers, with well-oriented amorphous regions, or on the surface of alkali-etched HSS PET fibers. The permanganic etchant removed the disordered amorphous regions more preferentially compared with the alkali etchant.     

Fabrication of extreme wettability patterns with water-film protection for organic liquids

Selective fabrication of superhydrophilic (S-philic) region on a superhydrophobic (S-phobic) surface requires complex technology and high cost, which has limited applications of extreme wettability patterns. In this paper, a twice-chemical-etching approach without special modification is used to prepare the extreme wettability patterns. Superhydrophobicity and superhydrophilicity can be successfully achieved after twice chemical etching for 20 seconds. The obtained patterns can maintain their extreme wettability for at least 30 days. Functional platforms with single-S-philic and multi-S-philic regions are fabricated to manipulate water and various organic liquids with water-film protection in an air environment.