Temperature dependence of photoluminescence from self-organized Ge quantum dots with large size and low density

Photoluminescence(PL) from self-organized Ge quantum dots(QDs) with large size and low density has been investigated over a temperature range from 10 to 300 K using continuous-wave(CW) optical excitation.The integrated PL intensity of QDs observed is negligible at about 10 K and rapidly increases with raising temperature up to 100 K.Through analyzing the PL experimental data of the QDs and wetting layer(WL),we provide direct evidence that there exists a potential barrier,arising from the greater compressive...     

Method of self-similar factor approximants

The method of self-similar factor approximants is completed by defining the approximants of odd orders, constructed from the power series with the largest term of an odd power. It is shown that the method provides good approximations for transcendental functions. In some cases, just a few terms in a power series make it possible to reconstruct a transcendental function exactly. Numerical convergence of the factor approximants is checked for several examples. A special attention is paid to the possibility of extrapolating the behavior of functions, with arguments tending to infinity, from the related asymptotic series at small arguments. Applications of the method are thoroughly illustrated by the examples of several functions, nonlinear differential equations, and anharmonic models.     

Comparison of discharge lamp and laser pumped cesium magnetometers

We have performed a comparison of laser (LsOPM) and lamp (LpOPM) pumped cesium vapor magnetometers. Although the LsOPM operated 50% above its shot-noise limit we found an intrinsic sensitivity of 15 fT/√Hz and 25 fT/√Hz for the LsOPM and the LpOPM, respectively. Two modes of operation, viz. the phase-stabilized and the self-oscillating modes, were investigated and found to yield a similar performance. We have compared the performance of the LsOPM and the LpOPM directly by simultaneous measurements of field fluctuations of a 2-μT magnetic field inside a multilayer magnetic shield and have used one of the magnetometers for an active field stabilization. In the stabilized mode we found a gradient instability of 25 fT within an integration time of 100 s, which represents an upper limit of the long-term stability of the magnetometers. Our research is motivated by the need for an improved control of magnetic fields and gradients in a planned neutron electric dipole experiment.This revised version was published online in August 2005 with a corrected cover date.     

The correlation length of commodity markets 2. Theoretical framework

The second of this series of two papers is devoted to a theoretical analysis of spatial interaction between commodity markets. The theoretical framework that we present is referred to as the stochastic spatial arbitrage model (SSAM); it accounts for most of the empirical regularities observed in the first paper. Two basic mechanisms are found to be responsible for spatial inter-market interaction, namely (i) spatial arbitrage and hedging conducted by traders, (ii) spatial correlation between local shocks; the latter is favored by a similar economic and cultural environment. The SSAM includes both effects and offers a wide range of predictions about price volatility, trade, price correlations, price differentials. Statistical tests display a convergent array of evidence in favor of the model. However several predictions cannot be tested by lack of statistical evidence, a circumstance which shows that yet additional “experimental” work is r! equired. Received 17 May 1999 and Received in final form 31 May 1999     

Wronskian perturbation theory

We develop a perturbation method that generalizes an approach proposed recently to treat velocity-dependent quantum-mechanical models. In order to test the present approach we apply it to some simple trivial and nontrivial examples.     

Energy spectrum of the trigonometric Rosen-Morse potential using an improved quantization rule

The improved quantization rule simplifies the calculation of the energy levels for the exactly solvable quantum system. In this Letter we calculate the energy levels of the Schrödinger equation with the symmetric and asymmetric trigonometric Rosen-Morse potentials by the improved quantization rule.     

简并态锗在大注入下的自发辐射谱模拟

基于费米狄拉克模型模拟了应变、温度以及掺杂对简并态锗的直接带自发辐射谱的影响.随着温度升高,更多的电子被激发到导带中,使得锗自发辐射谱的峰值强度和积分强度随温度的升高而增大.对自发辐射谱峰值强度的m因子进行计算,结果表明张应变可以显著提高锗自发辐射的温度稳定性.在相同应变水平下,由Γ-hh跃迁引起的自发辐射谱峰值强度大于Γ-lh跃迁引起的自发辐射谱峰值强度,但二者的积分强度几乎相等.此外,计算结果还证明了n型掺杂能显著提高锗的自发辐射强度.以上结果对于研究简并态半导体的自发辐射性质有重要的参考意义.     

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

We report a lateral Ge-on-Si ridge waveguide light emitting diode(LED) grown by ultrahigh vacuum chemical vapor deposition(UHV-CVD). Direct-bandgap electroluminescence(EL) of Ge waveguide under continuous current is observed at room temperature. The heat-enhancing luminescence and thermal radiation-induced superlinear increase of edge output optical power are found. The spontaneous emission and thermal radiation based on the generalized Planck radiation law are calculated and fit very well to the experimental results. The Ge waveguides with different lengths are studied and the shorter one shows stronger EL intensity.     

Ultrasmall Ge islands with low diameter-to-height aspect ratio on Si(1 0 0)-(2 × 1) surfaces

Scanning tunneling microscopy (STM) and high resolution cross-sectional transmission electron microscopy (XTEM) studies have been used to investigate the formation of Ge nanocrystals grown on Si(1 0 0)-(2 × 1) surfaces by molecular beam epitaxy (MBE). We observe relatively high density of Ge islands where small ‘pyramids’, small ‘domes’ and facetted ‘domes’ of various sizes co-exist in the film. As revealed from XTEM images, a large fraction of islands, especially dome-shaped Ge islands have been found to have an aspect ratio of ∼1 (diameter):1 (height). Observation of truncated-sphere-shaped Ge islands with a narrow neck contact with the wetting layer is reported.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.