新的溶胶-凝胶法制备Ge/SiO2量子点玻璃

以3－三氯锗丙酸和正硅酸乙酯为原料,通过水解、缩聚凝胶热处理及氢气反应,在SiO2凝胶玻璃中析出立方相Ge纳米晶,当x=30时,凝胶玻璃中除了析出立方相Ge纳米晶处,还析出六方相GeO2,利用XRD测试了Ge纳米晶的大小,发现随着掺杂量的增加,纳米颗粒粒径从1nm增大到10nm,电子衍射表明镶嵌在SiO2凝交玻璃中的Ge纳米晶为多晶结构。     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

三价镧系离子掺杂的Cd3Al2 Ge3O12的长余辉发光

系统地研究了三价镧系离子在Cd3Al2Ge3O12基质中的长余辉发光。总结了余辉性能与激活离子电负性的关系。研究发现该体系中易失电子的激活离子产生的余辉效果较好。在254nm紫外光激发下,基质和所有镧系离子(Pm除外)掺杂的样品都有发光和余辉。按照发光和余辉性质的不同可以将激活离子分为三类：Pr^3 、Tb^3 和Dy^3 等是有特征余辉发光的离子;Eu^3 和Sm^3 等是有特征发射,但没有特征余辉发光的离子;Ce^4 、La^3 、Nd^3 以及其他是没有特征发光的镧系离子。长余辉的产生是由缺陷引起的。由于Cd^2 离子在高温下容易挥发,基质中存在大量的Cd^2 离子空位,这种空位可以作为俘获电子的陷阱。同时为了补偿Cd^2 所产生的正电荷,在Cd^2 离子空位周围会有相应的负离子空位产生,比如氧离子空位。这种补偿作用的存在使得基质本身的缺陷种类和数量十分丰富,使得该体系的余辉性能比较优越。     

应变Ge空穴有效质量的各向异性与各向同性

在利用k·p微扰理论获得应变Ge/Si_1-xGe_x价带E（k）-k关系的基础上,研究得到了（001）,（101）,（111）面应变Ge/Si_1-xGe_x沿不同晶向及各向同性的价带空穴有效质量.结果显示,应变Ge/Si_1-xGe_x沿各晶向的带边有效质量随应力增大而减小,且沿[010]晶向最小;子带空穴有效质量在应力较大时变化不明显,并且在数值上与带边空穴有效质量相差不大.最后利用各向同性有效质量与文献结果进行比对,验证了结果的正确性.     

Determination of the central density on the basis of its moments

The value of the central density is of key importance for annihilation processes. For the ground state we discuss its determination from the moments of the ground state density. We first review the way of reaching the moments from the spectrum. In particular we show how to get the lowest moments in D = 3, namely 〈r⁻²〉 and 〈r⁻¹〉 from the series expansion of the Laplace transform of the density. We then recall a method to obtain the central density based on the Stieltjes moment problem. If the number of known moments is finite, this technique yields a lower bound. We investigate the possibilities to estimate the accuracy of the bound and the corresponding asymptotic value. An application to the muonic ²⁰⁸Pb atom is presented.     

Effects of junction defect healing in Germanium n-MOSFET through thermal annealing

In this paper, the impact of junction defect healing through thermal annealing in Ge n-metal-oxide-semiconductor field-effect transistors (MOSFETs) is thoroughly investigated. Germanium (Ge) is strongly affected by the presence of point defects within the crystal, which is the source of leakage current and low frequency noise. For MOSFET applications, these defects at the junction of the source and drain area are created by ion implantation. However, these can be significantly reduced by proper thermal treatment. Here, the effect of defect healing is investigated and presented through current–voltage characteristics of a n⁺/p diode and MOSFET I_D-V_G measurement, and secondary ion mass spectroscopy (SIMS).     

Sexually Transmitted Diseases on Bipartite Graph

We study the susceptible infected-susceptible （SIS） epidemic model on bipartite graph. According to the difference of sex conception in western and oriental nations, we construct the Barabasi Albert Barabasi Albert （BA-BA） model and Barabasi-Albert Homogeneity （BA-HO） model for sexually transmitted diseases （STDs）. Applying the rate equation approach, the positive equilibria of both models are given analytically. We find that the ratio between infected females and infected males is distinctly different in both models and the infected density in the BA-HO model is much less than that in the BA-BA model. These results explain that the countries with small ratio have less infected density than those with large ratio. Our numerical simulations verify these theoretical results.     

An Alternative Method for Calculating Bound-State of Energy Eigenvalues of Klein-Gordon for Quasi-exactly Solvable Potentials

We obtain the bound-state energy of the Klein-Gordon equation for some examples of quasi-exactly solvable potentials within the framework of asymptotic iteration method （AIM）. The eigenvalues are calculated for type- 1 solutions. The whole quasi-exactly solvable potentials are generated from the defined relation between the vector and scalar potentials.     

Infinitely many shape invariant discrete quantum mechanical systems and new exceptional orthogonal polynomials related to the Wilson and Askey–Wilson polynomials

Two sets of infinitely many exceptional orthogonal polynomials related to the Wilson and Askey–Wilson polynomials are presented. They are derived as the eigenfunctions of shape invariant and thus exactly solvable quantum mechanical Hamiltonians, which are deformations of those for the Wilson and Askey–Wilson polynomials in terms of a degree ?   (?=1,2,…$?=1,2,\dots$) eigenpolynomial. These polynomials are exceptional in the sense that they start from degree ??1$??1$ and thus not constrained by any generalisation of Bochner's theorem.