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61.
Solid-solution red phosphors for white LEDs 总被引:1,自引:0,他引:1
Gwan-Hyoung Lee 《Journal of luminescence》2011,131(12):2582-2588
Solid solutions of Eu3+-doped metal tungstate and molybdate phosphors were synthesized by solid-state reactions. The crystal structure of the solid-solution phosphors was determined to be tetragonal with a space group of I41/c. The red-emitting solid-solution phosphors exhibited a broad absorption band in the range 220-340 nm and sharp excitation peaks in the near UV to green region. The emission intensities of the solid-solution phosphors were enhanced due to the stiff lattices, as a result of the ordered distribution of cations and anions according to differences in ionic size. The increase in the energy transfer is discussed in terms of metal-ligand distances, ionization potential of Mo and the relatively large overlap between the excitation and emission spectra. Such solid-solution phosphors with a bright red emission intensity, relatively short decay time and appropriate color chromaticity have potential for use as red-emitting materials for white LEDs. 相似文献
62.
Gwan-Hyoung Lee 《Journal of luminescence》2011,131(12):2606-2611
The correlation between the crystal structure and luminescent properties of Eu3+-doped metal tungstate phosphors for white LEDs was investigated. Red-emitting A4−3x(WO4)2:Eux3+ (A=Li, Na, K) and B(4−3x)/2(WO4)2:Eux3+ (B=Mg, Ca, Sr) phosphors were synthesized by solid-state reactions. The findings confirmed that these phosphors exhibited a strong absorption in the near UV to green range, due to the intra-configurational 4f-4f electron transition of Eu3+ ions. The high doping concentration of Eu3+ enhanced the absorption of near UV light and red emission without any detectable concentration quenching. Based on the results of a Rietveld refinement, it was attributed to the unique crystal structure. In the crystal structure of the Eu3+-doped metal tungstate phosphor, the critical energy transfer distance is larger than 5 Å so that exchange interactions between Eu3+ ions would occur with difficulty, even at a high doping concentration. The energy transfer between Eu3+ ions, which causes a decrease in red emission with increasing concentration of Eu3+, appears to be due to electric multi-polar interactions. In addition, the Eu-O distance in the host lattice affected the shape of emission spectrum by splitting of emission peak at the 5D0→7F2 transition of Eu3+. 相似文献
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Low temperature quenching and high efficiency CaSc2O4:Ce3+ (CSO:Ce3+) phosphors co-doped with Tm3+, La3+ and Tb3+ ions were prepared by a solid state method and the phase-forming, morphology, luminescence and application properties of these phosphors were investigated. The results showed that co-doping of Tm3+, La3+ and Tb3+ ions can improve the luminescence properties and decrease temperature quenching of CSO:Ce3+ phosphor remarkably. High efficiency green-light-emitting diodes were fabricated with the prepared phosphors and InGaN blue-emitting (∼460 nm) chips. The good performances of the green-light-emitting LEDs made from co-doped CSO:Ce3+ phosphors confirm the luminescence enhancement and indicate that Tm3+, La3+ and Tb3+ co-doped CSO:Ce3+ phosphors are suitable candidates for the fabrication of high efficiency white LEDs. 相似文献
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Dong Ho Kim Su Jin Kim Seung Hwan Kim Tak Jeong Sung Min Hwang Tae Geun Kim 《固体物理学:研究快报》2011,5(8):274-276
The authors report upon the increased light‐output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a ‐plane GaN LEDs using Ni/Al/Ni/Au n‐type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10–5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10–4 Ω cm2, after annealing at 700 °C. The X‐ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10% and Pout increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Zeng LuTang Wanjun 《Physica B: Condensed Matter》2011,406(14):2901-2903
A series of NaY1−yEuy(WO4)2−x(MoO4)x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the 5D0→7F2 electric dipole transition of Eu3+. As the Mo content increases, the intensity of the 5D0→7F2 emission of Eu3+ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs). 相似文献