Infra-red free-carrier absorption due to impurity scattering in semiconducting quantum well structures

The theory of free-carrier absorption (FCA) is developed, in the extreme quantum limit when the carriers are assumed to populate only the lowest quantized energy level, for quasi-two and one-dimensional semiconducting quantum well structures where the carriers are scattered by ionized impurities. The radiation field is assumed to be polarized in the plane of the layer in the quasi-two-dimensional case and along the length of the wire in the quasi-one-dimensional case. Expressions for FCA are obtained for the cases where the impurities are either in the well (background impurities) or outside the well (remote impurities). Variation of FCA is numerically studied with photon frequency and well width.     

Exact solutions of an Ising spin chain with a spin-1 impurity

An exact solution of a single impurity model is hard to derive since it breaks translation invariance symmetry. We present the exact solution of the spin-1/2 transverse Ising chain imbedded by a spin-1 impurity. Using the hole decomposition scheme, we exactly solve the spin-1 impurity in two subspaces which are generated by a conserved hole operator.The impurity enlarges the energy deformation of the ground state above a pure transverse Ising system without impurity.The specific heat coefficient shows a small anomaly at low temperature for finite size. This indicates that the impurity can tune the ground state from a magnetic impurity space to a non-magnetic impurity space, which only exists for spin-1impurity comparing with spin-1/2 impurity and a pure transverse Ising chain without impurity. These behaviors essentially come from adding impurity freedom, which induces a competition between hole and fermion excitation depending on the coupling strength with its neighbor and the single-ion anisotropy.     

Exact ground-state correlation functions of one-dimensional strongly correlated electron models with resonating-valence-bond ground state

We investigate one-dimensional strongly correlated electron models which have the resonating-valence-bond state as the exact ground state. The correlation functions are evaluated exactly using the transfer matrix method for the geometric representations of the valence-bond states. In this method, we only treat matrices with small dimensions. This enables us to give analytical results. It is shown that the correlation functions decay exponentially with distance. The result suggests that there is a finite excitation gap, and that the ground state is insulating. Since the corresponding noninteracting systems may be insulating or metallic, we can say that the gap originates from strong correlation. The persistent currents of the present models are also investigated and found to be exactly vanishing.     

Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells

The shallow hydrogenic donor impurity states in square, V-shaped, and parabolic quantum wells are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The first four impurity energy levels and binding energy of the ground state are more easily calculated than with the variation method. The calculation results indicate that impurity energy levels decrease withthe increase of the well width and decrease quickly when the well width is small.The binding energy of the ground state increases until it reaches a maximum value,and then decreases as the well width increases. The results are meaningful andcan be widely applied in the design of various optoelectronic devices.     

Donor impurity states in direct-gap SiGe quantum well: Applied electric field and quantum size effects

Within the framework of the effective-mass approximation and variational procedure, competition effects between applied electric field and quantum size on donor impurity states in the direct-gap Ge/SiGe quantum well (QW) have been investigated theoretically. Numerical results show that the applied electric field (quantum size) dominates electron and impurity states in direct-gap Ge/SiGe QW with large (small) well width. Moreover, the competition effects also induce that the donor binding energies show obviously different behaviors with respect to electric field in the QW with different well widths. In particular, when the impurity is located at left boundary of the QW, the donor binding energy is insensitive to the variation of well width when well width is large for any electric field case.     

Incommensurability in the magnetic excitations of the bilinear-biquadratic spin-1 chain

We study the magnetic excitation spectrum of the spin-1 chain with Hamiltonian .We focus on the range where the spin chain is in the gapped Haldane phase. The excitation spectrum and static structure factor is studied using direct Lanczos diagonalization of small systems and density-matrix renormalization group techniques combined with the single-mode approximation. The magnon dispersion has a minimum at until a critical value is reached at which the curvature (velocity) vanishes. Beyond this point, which is distinct from the VBS point and the Lifshitz point, the minimum lies at an incommensurate value that goes smoothly to when approaches , the Lai-Sutherland point. The mode remains isolated from the other states: there is no evidence of spinon deconfinement before the point .These findings explain recent observation of the behavior of the magnetization curve for . Received 16 December 1998     

多量子位Heisenberg XX链中的杂质纠缠

通过分析系统的杂质位与其余部分间的纠缠N_1-A以及单个正常位与其余部分间的纠缠N_L-A研究了匀强磁场作用下含杂质Heisenberg XX链的纠缠特性.研究表明三量子位时纠缠存在的临界温度依赖于杂质参数J₁和匀强磁场B.研究发现,当量子位L为奇数时,纠缠N_1-A随量子位的增加而增大,而L为偶数时则相反,并且量子位L为偶数时的纠缠大于量子位L为奇数时的纠缠;对N_L-A, 量子位L为奇数时,纠缠随杂质参数J₁的变化与L=3类似,而L为偶数时纠缠随杂质参数|J₁|的增加而增加.     

拓扑近藤半金属

拓扑物态是凝聚态物理近年来最重要的研究领域之一。随着研究的不断深入,对拓扑物态的研究逐渐从弱关联材料体系拓展到了强关联材料体系。文章梳理了近年来对拓扑近藤半金属的相关研究,介绍了其中的理论模型、计算方法和一些候选材料及实验研究,并对该方向未来的发展做了展望。     

磁场对重电子金属CeCu6-xNix低温电阻的影响

测量了重电子金属CeCu6-xNix（x=0,0.5,0.1)，在1.8k-300k温度范围的电阻及磁场对电阻的影响（H=0,5T,10T),实验表明样品电阻的极大值对应的温度Tmax随着掺Ni含量的增大向温度降低的方向移动,而加磁场后Tmax随磁场的增加向高温方向移动,中从Kondo相互作用和相干散射的角度对这一现象的物理机制进行了分析.