TiO2 粉末催化剂光催化降解室内 空气中有机污染物

本文制备了一系列 TiO2粉末催化剂, 用光催化法降解室内空气中各种微量有机污染物,最终降解率 接近 100%. 考察了晶型对光催化剂性能的影响, 结果表明,锐钛矿型 TiO2 的催化性能最好. 最后,分析了 TiO2 光催化反应机理.     

Multinuclear magnetic resonance study of some mesoionic oxatriazoles containing nitrogenous exocyclic groups

¹H,¹³C,¹⁴N and¹⁵N NMR measurements are reported for four mesoionic 1-oxa-2, 3, 4-triazoles containing exocyclic nitrogenous groups. The NMR signal assignments are discussed and compared with those previously published for some corresponding oxatriazoles. The results obtained support the proposed cyclic mesoionic structures for the compounds studied. The questions of possible charge delocalization and valence tautomerism are addressed. Compound with N^– H as a exocyclic group (Fig. 1) is found to be relatively unstable, this is attributed to proton migration in the corresponding non-cyclic form of this molecule.Published in Khimiya Geterotsikiicheskikh Soedinenii, No. 9, pp. 1260–1263, September, 1995.     

Ce3+对Er3+/Yb3+共掺氟磷酸盐玻璃光谱性质的影响

研究了能量接受离子Ce³⁺对Er³⁺上转换发光强度以及Er³⁺在1.5μm附近波段发光性能参数的影响，并从能量匹配及能级结构角度出发对Er³⁺/Ce³⁺间的能量转移机制进行了分析.分析认为，⁴I_11/2能级的Er³⁺通过无辐射能量转移把能量传递给²F_5/2能级的Ce³⁺关键词： 氟磷酸盐玻璃 光谱性质 光纤放大器 3+和Ce³⁺')" href="#">Er³⁺和Ce³⁺     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

LaMgAl11O19∶R(R＝Tb,Mn)的真空紫外光谱特性

采用高温固相反应法合成了LaMgAl11O19∶R (R=Mn, Tb)荧光体, 测量了荧光体的真空紫外激发光谱和相应的发射光谱, 观察到基质吸收带位于170 nm附近, Mn2+离子的吸收位于170～510 nm范围, Tb3+ 离子的4f-5d吸收位于170～250 nm范围. 在147 nm激发下, 它们发射绿光. 真空紫外光谱特性的研究表明, 基质与激活离子之间存在较好的能量传递.     

k连通图可缩边导出子图的连通性

引进S1 3边形的概念 .证明了 ,对于k(k =3或 4)连通图G ,若G无S1 3边形 ,则 是 2连通的 ;另外也得到 ,设G是k(k≥ 2 )连通图 ,若对G的任一断片F ,有｜F｜ >[k/2 ]+ 1 ,则 是 2连通的 .从而改进并推广了N .Dean的结论 .     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Unconventional antiferromagnetic correlations of the doped Haldane gapsystem Y 2 BaNi 1 - x Zn x O 5

We make a new proposal to describe the very low temperature susceptibility of the doped Haldane gap compound Y₂BaNi_1-xZn_xO₅. We propose a new mean field model relevant for this compound. The ground state of this mean field model is unconventional because antiferromagnetism coexists with random dimers. We present new susceptibility experiments at very low temperature. We obtain a Curie-Weiss susceptibility χ( T ) ∼ C /(Θ + T ) as expected for antiferromagnetic correlations but we do not obtain a direct signature of antiferromagnetic long range order. We explain how to obtain the “impurity” susceptibility ( T ) by subtracting the Haldane gap contribution to the total susceptibility. In the temperature range [1 K, 300 K] the experimental data are well fitted by T ( T ) = C _imp 1 + T _imp / T . In the temperature range [100 mK, 1 K] the experimental data are well fitted by T ( T ) = A ln( T / T _c ), where T _c increases with x. This fit suggests the existence of a finite Néel temperature which is however too small to be probed directly in our experiments. We also obtain a maximum in the temperature dependence of the ac-susceptibility ( T ) which suggests the existence of antiferromagnetic correlations at very low temperature. Received 17 July 2001