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131.
利用推转壳模型的粒子数守恒方法计算了超形变(SD)转动带192Hg和194Hg(1,2,3)的带首转动惯量.分析了带首附近的组态结构及带首转动惯量随对力强度的变化.带首转动惯量之差δJ0对对力强度十分敏感,而对Nilsson能级参数K、μ及形变参数并不敏感.对力及堵塞效应是造成带首转动惯量差别的主要因素.但与正常形变核相比,对力强度似有较大程度减弱.  相似文献   
132.
A model of layered superconducting structure consisting of alternating anisotropic superconducting layers S1 and S2 with different transition temperatures is considered. It is shown that due to competition between two origins of anisotropy - effective-mass anisotropy of individual layers and proximity-induced anisotropy the effective anisotropy of the whole system signficiantly varies temperature. The components of the effective-mass tensor mc (along the anisotropy axis) and ma (perpendicular to the anisotropy axis) strongly depend upon temperature. This may lead to transition between layered (mc > ma) and quasi one-dimensional (mc < ma) types of anisotropy as well as to biaxial-type anisotropy which is also temperature dependent. The field distribution in a tilted vortex in a biaxial superconductor is calculated. The change in the properties of the vortex lattice with temperature in such systems is also investigated. The properties of YBa2Cu3Ox/PrBa2Cu3Oy multilayers are discussed in this connection.  相似文献   
133.
InAs/GaSb/AlSb resonant tunneling spin device concepts   总被引:1,自引:0,他引:1  
We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.  相似文献   
134.
提出了在无外力作功的情况下,具有Bauschinger效应的弹塑性材料处于屈服状态产生自发的塑性流动时应满足的条件.这个条件不仅与材料的力学性能有关,而且还处决于材料的具体的载荷边界条件和变形.举例说明了承受拉一扭组合的薄壁圆筒中,采用组合强化模型时,产生塑性流动的具体条件.  相似文献   
135.
136.
沈云  王海 《量子光学学报》2004,10(3):125-130
应用密度矩阵方程计算了四能级原子系统中三阶非线性极化率随信号光和探针光频率失谐的变化关系。结果表明,由于量子干涉对信号光强度的敏感性,使四能级原子介质的交叉Kerr非线性作用大大增强,与三能级系统相比,四能级原子介质的Kerr非线性系数可增强两个数量级。  相似文献   
137.
Scaling impacted structures   总被引:1,自引:0,他引:1  
Summary The problem of non-scalability of structures under impact loads caused by strain-rate effects is solved in this article by properly correcting the impact velocity. The technique relies on the use of an alternative dimensionless basis, together with a mathematical model which allows the calculation of a correction factor for the impact velocity. This new velocity, when applied to the model, makes it to assure the satisfaction of the scaling laws. The indirect similitude method detailed here is applied to two strain-rate sensitive structures, a double plate under in-plane impact and a beam subjected to a blast load. The results show a very good agreement so that the model and a prototype made from strain rate sensitive materials behave the same.accepted for publication 3 March 2004  相似文献   
138.
We fabricated nanoscale open-dot structures in an InAs surface inversion layer using an atomic-force-microscope oxidation process. Due to its superior nanofabrication capability, small open-dot structures with the feature size ranging between 100 and 300 nm were successfully fabricated. The magnetoresistance signal measured at 4.2 K showed reproducible fluctuations and a periodic oscillation component that varies in both amplitude and periodicity depending on the dot size. We show that the period of the oscillations corresponds to that of the Aharonov–Bohm effect and propose that the possible mechanism for the oscillations is due to the formation of a one-dimensional electron channel enclosing the open-dot structure as a result of the electron transfer from the InAs oxide to InAs.  相似文献   
139.
We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-νnet discontinuous. Under tilted magnetic fields, these Rxx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.  相似文献   
140.
Rashba polarization in HgCdTe inversion layers at large depletion charges   总被引:1,自引:0,他引:1  
The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range NAND=3×1015–3×1018 cm−3. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as PR0.5 and a capability to control the Rashba effect strength at constant electron concentration.  相似文献   
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