Mechanical effects of polishing pad in copper electrochemical mechanical deposition for planarization

ECMD (electrochemical mechanical deposition) process consists of a traditional ECP (electrochemical plating) mechanism and a mechanical component. That is, this technique involves both electrochemical plating and mechanical sweeping of the material surface by the polishing pad. The mechanism of the ECMD process may be achieved through two mechanisms. The first mechanism may be the electrochemical plating on the surface where mechanical sweeping of polishing pad does not reach, and the second mechanism may be that the plating rate in the area that is mechanically swept may be reduced by the polishing pad. In this study, the effects of the mechanical component were investigated through various polishing pad types and hole ratios. In comparison to various polishing pad types using the manufactured the ECMD system, the plating rate and WIWNU (within wafer non-uniformity) using the experimental non-pore polishing pad were better than those of the experiments using other polishing pads.     

Preparation and luminescence properties of Tb doped ZrO2 and BaZrO3 phosphors

ZrO₂:Tb³⁺ and BaZrO₃:Tb³⁺ powders are prepared by combustion synthesis method and the samples were further heated to 500, 700 and 1000 °C to improve the crystallinity of the materials. The structure and morphology of materials have been examined by X-ray diffraction, Raman spectra and scanning electron microscopy. It is remarkable that all the samples of ZrO₂:Tb³⁺ and BaZrO₃:Tb³⁺ have similar morphology. These images exhibited homogeneous aggregates of varying shapes and sizes, which are composed of a large number of small cuboids and broken cuboids. The cuboids and broken cuboids size of all the samples are less than 0.5 μm. Photoluminescence for both materials increases with increase of temperature and found maximum for the samples heated to 1000 °C with 5 mole% doping of Tb³⁺ ions. Luminescence is almost double for the zirconia compared to that of barium-zirconate.     

减少光学元件亚表面缺陷的方法研究

针对强激光光学元件的应用要求,对光学材料在研磨和抛光过程中形成的亚表面缺陷进行了分析,并借鉴小工具数控抛光和Marangoni界面效应,提出采用数控化学刻蚀技术来实现光学表面面形和微结构形貌的高准确度加工．通过实验对亚表面缺陷的分布位置和特性进行了分析,实验验证了在静止和移动条件下Marangoni界面效应的存在．对材料的定量去除进行了实验,提出了亚表面缺陷的去除方法．     

Radiative and electrical properties of granular materials: application to mixtures of insulating and conducting polymers

The study of the radiative and electrical properties of granular materials coated with polypyrrole (PPy) a conducting polymer, shows the influence of the processing conditions concerning the nature of the substrate and the deposition parameters. Binary mixtures with varying compositions of mono and bidisperse particles, coated with or without PPy (which are conductive and insulating, respectively) present electrical percolation thresholds which can also be found when the radiative aspect is considered. The principal component analysis carried out on the spectral values allows us to corroborate the experimental factors and to distinguish the mixtures according to their compositions.     

铜在氨水介质铁氰化钾CMP抛光液中抛光速率及其影响因素的研究

本文研究了腐蚀介质氨水、成膜剂铁氰化钾及磨粒γ_Al2 O3 浓度、抛光压力和抛光转速对铜化学_机械抛光速率的影响 .解释了各影响因素的影响机理 .实验表明了在一定范围内抛光速率与抛光压力及抛光转速呈线性关系 ,组分浓度对抛光速率的影响为非线性关系 ,Preston系数Kp是变量 .最大抛光速率的化学_机械抛光液的配方为 :4 %K3Fe(CN) 6 + 1 %NH3·H2 O + 2 5%γ -Al2 O3,Kp=0 .0 2 3 83 ;工艺条件为 :3 0 0r/min、80kpa .最佳抛光效果为 :Ra=50nm ,Rmax=4 0 0nm     

Specific properties of fine SnO<Subscript>2</Subscript> powders connected with surface segregation

The effect of surface segregation in Sb- and In-doped SnO₂ fine-grained powders has been analyzed in comparison with single-crystalline samples. The kinetics and thermodynamics of the Sb and In segregation processes were studied as a function of annealing temperature by X-ray photoelectron spectroscopy (XPS) after annealing in an oxygen-containing atmosphere. Significant differences between diffusion and segregation were revealed for doped powders and single crystals, obviously because of simultaneous diffusion and particle-growth processes proceeding during annealing of powders. For doped single crystals the thermodynamic equilibrium is approached after 24 h annealing above 850 °C and at 1000 °C for Sb and In, respectively. Higher effective activation energies of diffusion are observed for doped powders and the thermodynamic equilibrium is not achieved under technologically relevant annealing conditions. On the basis of dopant profile measurements anomalies in the electrical resistivity at 300 °C of Sb-doped SnO₂ powders annealed at 700 and 900 °C were attributed to an Sb-depleted zone formed beneath the segregated surface during the kinetic regime. To achieve optimum resistivity behavior for commercial application, inhomogeneous doping of powders must be avoided by appropriate preparation steps.     

Pharmaceutical powders analysis using FT-Raman spectrometry: simultaneous determination of sulfathiazole and sulfanilamide

A procedure for rapid quantitative analysis of pharmaceutical powders is described. Powdered samples were measured in a rotating cell in order to avoid sub-sampling problems by increasing the irradiated area. Quantitative determination of sulfathiazole and sulfanilamide, using a simple univariate calibration model is proposed. Even though both antibacterials are of the same chemical family (sulfonamides), the richness of structural information contained in the Raman spectra allowed their determination using the area of two selected bands (1255 and 1629 cm⁻¹ for sulfathiazole and sulfanilamide, respectively). Relative standard deviation (R.S.D.) values (n = 10) of 3.35% and 3.46% for sulfathiazole and sulfanilamide, respectively, demonstrate the good reproducibility of the measurement technique with the rotating cell. The method was successfully applied to the analysis of synthetic mixtures and commercial pharmaceutical powders. The procedure is suitable to be applied to pharmacopoeial uniformity of content testing of batches.     

In situ X-ray diffraction investigation of porous silicon strains induced by the freezing of a confined organic fluid

High resolution X-ray diffraction is used to perform an in situ measurement of the variations of the lattice parameter of the nanometer size crystallites of porous silicon, induced by the freezing of a confined organic fluid, dodecane. Two p⁺ type PS layers of 60 and 70% porosity are investigated, and the variations of their lattice parameter with the temperature (in the range 150–300 K) are measured. The experimental curves are discussed in relation with the results of a previous calorimetric study of the freezing of confined dodecane. We explain the observed strains by the presence of capillary stresses, that appear in the layer due to the formation of internal liquid-vapour meniscus during the freezing process of the confined fluid. Received 22 October 1999 and Received in final form 25 March 2000     

微米水合氧化铝/环氧复合材料脉冲真空闪络影响因素

 研究了微米Al₂O₃·3H₂O/环氧复合材料的脉冲真空闪络影响因素。分别给出了固化剂、分散方法、偶联剂对复合材料闪络特性的影响和纯环氧表面抛光前后的脉冲真空闪络特性。实验结果表明:酸酐固化的试样比胺类固化试样闪络电压要高;高速分散方法与超声波分散方法相比,采用前者制备的复合材料有更好的分散特性;使用偶联剂处理填料比不使用时得到的环氧复合材料闪络电压高;抛光后的纯环氧试样有较高的闪络电压。