全文获取类型
收费全文 | 4100篇 |
免费 | 1172篇 |
国内免费 | 660篇 |
专业分类
化学 | 2154篇 |
晶体学 | 471篇 |
力学 | 146篇 |
综合类 | 29篇 |
数学 | 21篇 |
物理学 | 3111篇 |
出版年
2024年 | 5篇 |
2023年 | 39篇 |
2022年 | 93篇 |
2021年 | 106篇 |
2020年 | 125篇 |
2019年 | 126篇 |
2018年 | 112篇 |
2017年 | 193篇 |
2016年 | 201篇 |
2015年 | 173篇 |
2014年 | 250篇 |
2013年 | 324篇 |
2012年 | 330篇 |
2011年 | 523篇 |
2010年 | 388篇 |
2009年 | 422篇 |
2008年 | 348篇 |
2007年 | 373篇 |
2006年 | 342篇 |
2005年 | 268篇 |
2004年 | 215篇 |
2003年 | 185篇 |
2002年 | 141篇 |
2001年 | 107篇 |
2000年 | 88篇 |
1999年 | 80篇 |
1998年 | 67篇 |
1997年 | 56篇 |
1996年 | 49篇 |
1995年 | 31篇 |
1994年 | 26篇 |
1993年 | 19篇 |
1992年 | 30篇 |
1991年 | 17篇 |
1990年 | 17篇 |
1989年 | 11篇 |
1988年 | 7篇 |
1987年 | 11篇 |
1986年 | 5篇 |
1985年 | 7篇 |
1984年 | 3篇 |
1983年 | 2篇 |
1982年 | 5篇 |
1981年 | 1篇 |
1980年 | 1篇 |
1979年 | 5篇 |
1978年 | 1篇 |
1975年 | 4篇 |
排序方式: 共有5932条查询结果,搜索用时 31 毫秒
21.
The Li oxides species formed on Li over-deposited V2O5 thin film surfaces have been studied by using X-ray and UV induced photoelectron spectroscopy (XPS and UPS). The photoelectron spectroscopic data show that the Li over-deposited V2O5 system itself is not stable. Further chemical decomposition reactions are taken place even under UHV conditions and lead to form Li2O and Li2O2 compounds on the surface. The formation of Li2O2 causes to arise an emission line at about 11.3 eV in the valence band spectra. 相似文献
22.
采用交替沉积磁控溅射工艺制备了超薄多层的FeCoB SiO2 磁性纳米颗粒膜 .利用x射线衍射仪、扫描探针显微镜、透射电子显微镜分析了薄膜的微结构和形貌特征 .采用振动样品磁强计、四探针法、微波矢量分析仪及谐振腔法测量薄膜试样的磁电性能和微波复磁导率 .重点对SiO2 介质相含量、薄膜微结构对电磁性能产生重要影响的机理做了分析和探讨 .结果表明 :这类FeCoB SiO2 磁性纳米颗粒膜具有良好的软磁性能和高频电磁性能 ,2GHz时的磁导率 μ′高于 70 ,可以应用于高频微磁器件或微波吸收材料的设计 相似文献
23.
24.
Formation of p-type ZnO film on InP substrate by phosphor doping 总被引:3,自引:0,他引:3
Kyu-Hyun Bang Deuk-Kyu Hwang Min-Chul Park Young-Don Ko Ilgu Yun Jae-Min Myoung 《Applied Surface Science》2003,210(3-4):177-182
ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn3P2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn3P2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices. 相似文献
26.
Pulsed laser deposition with a Nd:YAG laser was used to grow thin films from a pre-synthesized Ti3SiC2 MAX-phase formulated ablation target on oxidized Si(1 0 0) and MgO(1 0 0) substrates. The depositions were carried out in a substrate temperature range from 300 to 900 K, and the pressure in the deposition chamber ranged from vacuum (10−5 Pa) to 0.05 Pa Argon background pressure. The properties of the films have been investigated by Rutherford backscattering spectrometry for film thickness and stoichiometric composition and X-ray diffraction for the crystallinity of the films. The silicon content of the films varied with the energy density of the laser beam. To suppress especially the silicon re-sputtering from the substrate, the energy of the incoming particles must be below a threshold of 20 eV. Therefore, the energy density of the laser beam must not be too high. At constant deposition energy density the film thickness depends strongly on the background pressure. The X-ray diffraction measurements show patterns that are typical of amorphous films, i.e. no Ti3SiC2 related reflections were found. Only a very weak TiC(2 0 0) reflection was seen, indicating the presence of a small amount of crystalline TiC. 相似文献
27.
28.
In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH3)2AlH, a surface reaction dominated below a (CH3)2AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength. 相似文献
29.
本文论述应用光学薄膜技术对汽车窗口玻璃和塑料的若干性能进行改进的技术发展水平,这些性能包括塑料表面的硬化,红外区的反射,紫外区的吸收,偏振化作用,双折射,憎水性以及光学角度选择性等,评论等离子体处理和物理蒸汽淀积薄膜工艺近来应用的一些例子。对于物理蒸汽淀积薄膜所提供的异常功能连同实际使用中它们的耐久性作了特殊的强调。 相似文献
30.
A method for the deposition of BN onto graphite and other substrates is described. Boron trichloride (BCl3) and ammonia (NH3) diluted with Ar were used as reacting gases. The deposition process was carried out at 1300 K as well as lower temperatures in an open system at pressures of 1 atm. The consequences of the introduction of hydrogen to the system were considered. It was demonstrated that the replacement of argon with hydrogen increases the efficiency of the process as well as the theoretical rate of BN deposition. However, the acceleration of the deposition seems to be unprofitable, because the resulting supersaturation leads to the formation of an amorphous phase. The modification of the experimental conditions were proposed.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday 相似文献