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21.
The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.  相似文献   
22.
各向异性材料中共线刚性线夹杂的纵向剪切问题   总被引:8,自引:2,他引:6  
本文研究各向异性材料中共线刚性线夹杂,(有时称作“硬裂纹”或“反裂纹”问题)的纵向剪切问题。利用复变函数方法,提出了一般问题的公式和某些实际重要问题的封闭形式解,考察了刚性线端点附近的应力分布.从本文解答的特殊情形,可以直接导出各向同性材料相应问题的公式和结果,包括某些已有的结果 ̄[7].  相似文献   
23.
Based on the stress transport model, a rate-dependent algebraic expression for the Reynolds stress tensor is developed. It is shown that the new model includes the normal stress effects and exhibits viscoelastic behavior. Furthermore, it is compatible with recently developed improved models of turbulence. The model is also consistent with the limiting behavior of turbulence in the inertial sublayer and is capable of predicting secondary flows in noncircular ducts. The TEACH code is modified according to the requirements of the rate-dependent model and is used to predict turbulent flow fields in a channel and behind a backward-facing step. The predicted results are compared with the available experimental data and those obtained from the standard k-ε and algebraic stress models. It is shown that the predictions of the new model are in better agreements with the experimental data.  相似文献   
24.
Analytical expressions for the stresses near a circular hole in a transversely isotropic shallow spherical shell under uniform pressure are derived. The form of the solution depends on the range of change in the compliance to transverse shear. The influence of the relative radius of the hole and the compliance to transverse shear on the stress concentration is analyzed.__________Translated from Prikladnaya Mekhanika, Vol. 40, No. 12, pp. 99–106, December 2004.  相似文献   
25.
界面应力的正确评价是分析薄膜涂层材料力学特性的难题之一。利用镜像点法和Dirichlet等值性原理,本文推导了等厚双层薄膜涂层材料受表面集中力作用的平面问题理论解。该显式理论解是以固定在各镜像点上的局部坐标系下的Goursat应力函数的形式给出的。对应于高阶镜像点的应力函数,可通过递推的方法,从对应于低阶镜像点的应力函数求得,而且也易于计算机编程。随着镜像点阶数的增大,它与界面的距离也越来越大,因而相对应的应力函数对界面应力的影响越来越小。最后的算例表明,只需考虑前面有限个镜像点,便可获得足够精度的解。该理论解可作为格林函数,以求解复杂问题的理论解,也可用作边界元法的基本解,提高数值计算的精度和效率。  相似文献   
26.
Whereas there exists a mathematical proof for one-site breathers stability, and an unpublished one for two-site breathers, the methods for determining the stability properties of multibreathers rely on numerical computation of the Floquet multipliers or on the weak nonlinearity approximation leading to discrete nonlinear Schrödinger equations. Here we present a set of multibreather stability theorems (MST) that provides a simple method to determine multibreathers stability in Klein–Gordon systems. These theorems are based in the application of degenerate perturbation theory to Aubry’s band theory. We illustrate them with several examples.  相似文献   
27.
The effect of the shear flow on the thickness change of a polyelectrolyte membrane grafted onto a glass substrate was directly investigated with a flow cell combined with a confocal laser scanning microscope. The membrane thickness decreased proportionally to an increase in the shear stress of the flow when the shear rate exceeded a critical value of 1 s?1. The higher the ionic strength was of the fluid, the greater the thinning effect was. The correlation between the critical shear rate and the relaxation of the polymer in the gel membrane was examined. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2808–2815, 2003  相似文献   
28.
The quantum fluctuations of the stress tensor of a quantum field are discussed, as are the resulting space-time metric fluctuations. Passive quantum gravity is an approximation in which gravity is not directly quantized, but fluctuations of the space-time geometry are driven by stress tensor fluctuations. We discuss a decomposition of the stress tensor correlation function into three parts, and consider the physical implications of each part. The operational significance of metric fluctuations and the possible limits of validity of semiclassical gravity are discussed.  相似文献   
29.
We present measurements of the attenuation and phase velocity of surface acoustic waves in thin YBa2Cu3O films as a function of temperature, in magnetic fields up to 3.6 T applied parallel to the c-axis of the films. We have observed anomalies in both, the attenuation and the phase velocity in the vicinity of the superconducting critical temperature which do not depend on the magnetic field. Possible origins of these anomalies, observed, to our knowledge, for the first time in YBa2Cu3O thin films, are discussed and compared to bulk acoustic wave experiments. We present a kind of feedback technique for surface acoustic waves which improves the sensitivity of this type of measurement. The actual sensitivity limits are mentioned. Received: 7 August 1997 / Revised: 7 November 1997 / Accepted: 17 November 1997  相似文献   
30.
The electronic structures of the metallic and insulating phases of the alloy series Ca2-xSrxRuO4 ( 0 ? x ? 2) are calculated using LDA, LDA+U and Dynamical Mean-Field Approximation methods. In the end members the groundstate respectively is an orbitally non-degenerate antiferromagnetic insulator (x = 0) and a good metal (x = 2). For x > 0.5 the observed Curie-Weiss paramagnetic metallic state which possesses a local moment with the unexpected spin S = 1/2, is explained by the coexistence of localized and itinerant Ru-4d-orbitals. For 0.2 < x < 0.5 we propose a state with partial orbital and spin ordering. An effective model for the localized orbital and spin degrees of freedom is discussed. The metal-insulator transition at x = 0.2 is attributed to a switch in the orbital occupation associated with a structural change of the crystal. Received 27 July 2001  相似文献   
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