Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1−x strained quantum wells

The excitonic properties of a ZnSe/ZnS_xSe_1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS_0.18Se_0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra.     

Fixed charge and interface traps at heterovalent interfaces between Si(1 0 0) and non-crystalline Al2O3–Ta2O5 alloys

Characterization by Auger electron spectroscopy (AES) and Fourier transformation infrared spectroscopy (FTIR) confirms (Ta₂O₅)_x(Al₂O₃)_1−x alloys are homogeneous pseudo-binary alloys with increased thermal stability with respect to end member oxides, Ta₂O₅ and Al₂O₃. Capacitance–voltage (C–V) and current density–voltage (J–V) data as a function of temperate show that the Ta d-states of the alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset of Ta₂O₅ with respect to Si.     

Interaction of metals with an organic semiconductor: Ag and In on PTCDA

The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π^* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π^* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.     

Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe₂ (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about −1.2 J/m², indicating that this interface is very stable. The MoSe₂ layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about −6.5 to −5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about −5.0 to −1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe₂ layer.     

双通道高速数据采集处理平台的设计与实现

为满足数字式测向接收机对高速数据采集和处理的需求,研制了高速数据采集处理平台,该平台基于ADC12D1800RF模数转换器实现了两路1.35GHz中频信号的带通采样,以Xilinx公司V7系列FPGA为数据处理器,采用高速DDR3作为存储设备解决了海量数据存储问题,并通过高速串行接口（GTX/SRIO）实现了大容量数据的实时传输。该平台的测试结果为：1.8GHz采样率时有效位数大于8bit,DDR3存储器的工作主频可达1333MHz,GTX接口在10Gbps速率下工作时,其误码率小于10-9,上述测试结果表明该平台可以高速、准确地实现信号采集、数据传输、存储和处理,达到了预期设计目标。     

XPS study of annealing induced effects on surface and interface electronic properties of Si/Ge nanostructures

The present study is focused on the influence of vacuum thermal treatment on surface/interface electronic properties of Si/Ge multilayer structures (MLS) characterized using X-ray photoelectron spectroscopy (XPS) technique. Desired [Si(5 nm)/Ge(5 nm)]_×10 MLS were prepared using electron beam evaporation technique under ultra high vacuum (UHV) conditions. The core-level XPS spectra of as-deposited as well as multilayer samples annealed at different temperatures such as 100 °C, 150 °C and 200 °C for 1 h show substantial reduction in Ge 2p peak integrated intensity, whereas peak intensity of Si 2p remains almost constant. The complete interdiffusion took place after annealing the sample at 200 °C for 5 h as confirmed from depth profiling of annealed MLS. The asymmetric behaviour in intensity patterns of Si and Ge with annealing was attributed to faster interdiffusion of Si into Ge layer. However, another set of experiments on these MLS annealed at 500 °C suggests that interdiffusion can also be studied by annealing the system at higher temperature for relatively shorter time duration.     

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1 0 0) systems

As metal-oxide-semiconductor field-effect transistor (MOSFET) devices are shrunk to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain region. This work demonstrates a method for the formation of epitaxial NiSi₂ layers by a solid-phase reaction in Ni-P(8 nm)/Si(1 0 0) samples. The results show that the sheet resistance remained low when the samples were annealed at temperatures from 400 to 700 °C. P atoms can be regarded as diffusion barriers against the supply of Ni to the Si substrate, which caused the formation of Si-rich silicide (NiSi₂) at low temperature. Furthermore, elemental P formed a stable capping layer with O, Ni and Si during the annealing process. A uniform NiSi₂ layer with an atomically flat interface was formed by annealing at 700 °C because of the formation of a Si-Ni-P-O capping layer and a reduction in the total interface area.     

Influence of intramolecular vibrations in charge redistribution at the pentacene-graphite interface

We have investigated the relation between the intramolecular vibrational modes of pentacene and the charge redistribution at the pentacene-graphite interface by using high-resolution electron-energy-loss-spectroscopy. The three main vibrational peaks shift to lower energies as the pentacene film thickness decreases. In order to discuss this energy shift, we have calculated the vibrational energies of a free pentacene molecule by changing its charge state. We have also calculated the vibrational energies of a pentacene molecule adsorbed on a graphite sheet by changing the pentacene-graphite distance. Taking the experimental and calculation results into account, we conclude that the observed energy shifts result from an intramolecular charge redistribution. The present results indicate that the effect of an intramolecular charge redistribution is essential to discuss the origin of an energy shift observed in a vibrational study of an organic molecule/substrate interface.     

Kinetic stabilization of Fe film on GaAs(1 0 0): An in situ X-ray reflectivity study

We study the growth of Fe films on GaAs(1 0 0) at a low temperature, 140 K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, β_S = 0.43 ± 0.14. The observed β_S is attributed to the restricted interlayer diffusion at the low growth temperature. The change of the interface width during growth was minimal. When the Fe film was annealed to room temperature, the surface smoothed, keeping the interface width almost unchanged. The confinement of the interface derives from that the diffusion of Ga and As proceeds via the inefficient bulk diffusion, and the overlying Fe film is kinetically stabilized.