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91.
92.
Waheed S. KhanChuanbao Cao Faheem K. ButtZulfiqar Ali M. SafdarLiqing Pan M. Yasir RafiqueQurrat ul Ain Zahid UsmanGhulam Nabi 《Applied Surface Science》2011,257(16):7314-7319
We report here the evolution of zinc based high purity phases with novel morphologies such as Zn3N2 hollow structures, ZnO nanowires and nanopowders, as well as metallic Zn layered hexagonal microparticles at progressively increased reaction temperature of 600 °C, 700 °C, 800 °C under NH3 gas atmosphere using Zn powder precursor and keeping all other experimental parameters unchanged. Growth mechanism for Zn3N2 obtained by nitridation, ZnO by oxidation and Zn microparticles via thermal evaporation & condensation process are discussed briefly. The as-synthesized products were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM). Photoluminescence (PL) studies have revealed very interesting and infrequently observed emission bands at 378 and 661 nm for Zn3N2, 359 and 396 nm for ZnO as well as 389 nm for Zn polyhedral microparticles. 相似文献
93.
This paper presents the investigation of the properties of GaN nanowires synthesized from Ni-catalyzed chemical vapour deposition method under various growth temperatures. The influence of the growth temperatures on the morphological, structural and optical characteristics of the synthesized GaN nanowires was investigated in this work. Field-emission scanning electron microscopy images revealed that the 950 °C was the optimal growth temperature for synthesizing uniform, straight and smooth morphology of GaN nanowires. X-ray diffraction results demonstrated that the synthesized low dimensional GaN structures have the hexagonal wurtzite structure. Ultraviolet and blue emissions were detected from photoluminescence measurements. In addition, phonon replicas with the energy separation of 90 meV have been observed at the lower energy of the blue emission region in photoluminescence spectra. 相似文献
94.
We present an off-shell generating function for all cubic interactions of higher spin gauge fields constructed in Manvelyan et al. (2010) [1]. It is a generalization of the on-shell generating function proposed by Sagnotti and Taronna [2], is written in a very compact way, and turns out to have a remarkable structure. 相似文献
95.
Yohei Konaka Ken-ichi Ono Yoshikazu Terai Yasufumi Fujiwara 《Journal of Crystal Growth》2010,312(14):2056-2059
CuPt-ordering and phase separation were directly investigated in In1-xGaxAsyP1-y with a low arsenic content grown by organometallic vapor phase epitaxy on GaAs substrates. CuPt-ordering and phase separation in samples grown at the substrate temperatures of 630 and 690 °C were characterized by transmission electron diffraction and transmission electron microscopy. Although the immiscibility of InGaAsP was enhanced at the lower substrate temperature, the sample grown at 630 °C showed less phase separation than the 690 °C-grown sample. The degree of CuPt-ordering was significantly enhanced in the sample grown at 630 °C. The results demonstrated that the CuPt-ordering originating from surface reconstruction of P(2×4) suppressed the phase separation even in the miscibility gap. The detailed characterization of the phase separation clearly revealed a vertical composition modulation (VCM) in InGaAsP for the first time. The mechanism of the VCM formation is discussed based on the modulated-strain field on the surface. 相似文献
96.
Qiushi Wang Ridong CongMin Li Jian ZhangQiliang Cui 《Journal of Crystal Growth》2010,312(14):2133-2136
α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are about 50–200 nm in stem diameter and 10–100 μm in length. α-Si3N4 nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiOx layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires. 相似文献
97.
Magnetite particles were synthesized through a process including dissolution of Fe(OH)2 and precipitation of an oxidized phase in aqueous solution. The Fe3+ ion was added at the beginning of the synthesis to accelerate the formation of magnetite, control the particle size and improve the monodispersibility. It was found that the addition of Fe3+ ion affected the nucleation and the formation of magnetite particles significantly. Magnetite nanoparticles with small particle size and narrow size distribution were obtained. Furthermore, high magnetic properties were obtained in small particle size. The particle size and magnetic properties increased through the increase of Fe2+/Fe3+ ratio. 相似文献
98.
A new organic compound of bis-glycine maleate was synthesized in the alkaline medium of 10% ammonium hydroxide solution. The bulk single crystals of Bis-Glycine Maleate (BGM) have been grown by slow cooling method. The grown crystals were characterized by employing single crystal and powder X-ray diffraction, Fourier transform infrared, optical absorption spectral studies and thermo gravimetric analysis. The microhardness studies confirmed that the BGM has a fairly high Vicker’s hardness number value (41 kg mm−2) in comparison to other organic NLO crystals. Second harmonic generation efficiency of the crystal measured by Kurtz–Perry powder method using Nd:YAG laser is found to be comparable to that of potassium dihydrogen phosphate (KDP). Frequency dependent dielectric studies were carried out along the major growth axis. 相似文献
99.
Yongzheng Wang Jing LiJiyang Wang Shujuan HanYongjie Guo 《Journal of Crystal Growth》2010,312(19):2779-2782
Neodymium phosphate single crystals, NdPO4, have been grown by a flux growth method using Li2CO3-2MoO3 as a flux. The as-grown crystals were characterized by X-ray powder diffraction(XRPD), differential thermal analysis (DTA) and thermogravimetric analysis (TG) techniques. The results show that the as-grown crystals were well crystallized. The crystal was stable over the temperature range from 26 to 1200 °C in N2. The specific heat of NdPO4 crystal at room temperature was 0.41 J/g °C. The absorption and the fluorescence spectra of NdPO4 crystal were also measured at room temperature. 相似文献
100.
E. Richter U. ZeimerS. Hagedorn M. WagnerF. Brunner M. WeyersG. Tränkle 《Journal of Crystal Growth》2010,312(18):2537-2541
The boule-like growth of GaN in a vertical AIXTRON HVPE reactor was studied. Extrinsic factors like properties of the starting substrate and fundamental growth parameters especially the vapor gas composition at the surface have crucial impact on the formation of inverse pyramidal defects. The partial pressure of GaCl strongly affects defect formation, in-plane strain, and crystalline quality. Optimized growth conditions resulted in growth rates of 300–500 μm/h. GaN layers with thicknesses of 2.6 and of 5.8 mm were grown at rates above 300 μm/h. The threading dislocation density reduces with an inverse proportionality to the GaN layer thickness. Thus, it is demonstrated that growth rates above 300 μm/h are promising for GaN boule growth. 相似文献