Uniformity investigation of MOCVD‐grown LED layers

Doped or undoped gallium nitride compounds (GaN/InGaN), usually grown by metal‐organic chemical vapor deposition (MOCVD) method, are at the heart of blue and green light emitting diodes (LEDs). Growth uniformities, such as the excited wavelength, luminous intensity and film thickness, critically influence their application in LED devices. In this paper, growth of GaN compounds in a MOCVD reactor, capable of a one‐time production of 36 × 2” wafers of nitrides, has been investigated. To examine growth uniformity across the wafer and from wafer to wafer, the reactor is divided into Zone A, Zone B and Zone C according to distance to the center of the graphite susceptor. Comparative analysis of each zone offers a straightforward view of the mean excitation wavelength, luminous intensity, film thickness and their standard deviations. Conformity of the growth uniformity in each zone is further checked comprehensively through averaging across‐wafer and wafer‐to‐wafer variables and their standard deviations. Zone B is found to retain excellent wavelength uniformity, since it is located at the middle of the susceptor with weaker effects of the susceptor edge and of the inlet gas flow. Zone A, at the center of the reactor, has the best mean intensity and thickness uniformities due to a well control of the infrared temperature measurement during the growth. And Zone C is worst in all uniformities and should be the main focus when optimizing the reactor. The above experimental analysis reveals the principles common to the MOCVD technique, and provides a basic for further optimization of the process window to improve the cycles with considerable reduction of the costs.     

Ge_nEu(n=1-13)团簇的结构、电子及磁性质(英文)

利用密度泛函理论在广义梯度近似下研究了GenEu(n=1-13)团簇的生长模式和磁性.结果表明:对于GenEu(n=1-13)团簇的基态结构而言,没有Eu原子陷入笼中.这和SinEu以及其它过渡金属掺杂半导体团簇的生长模式不同.除GeEu团簇外,GenEu(n=2-13)团簇的磁矩均为7μB.团簇的总磁矩与Eu原子的4f轨道磁矩基本相等.Ge、Eu原子间的电荷转移以及Eu原子的5d、6p和6s间的轨道杂化可以增强Eu原子的局域磁矩,却不能增强团簇总磁矩.     

阳极氧化铝模板法可控制备金属纳米线和纳米管阵列的生长机制

利用阳极氧化铝模板(AAO)进行Ni的电化学沉积, 通过在溶液中引入螯合剂控制电解质的有效浓度和电沉积的过电位, 实现了Ni纳米线和纳米管阵列的可控制备. 通过分析电沉积过程中纳米线和纳米管在不同位置生长速率(侧壁(Vw)和底端(Vb))的控制因素, 我们提出了纳米线和纳米管生长的可能机制. 当电解质浓度高而还原电位更负(如-1.5 V)时, 或者当电解质浓度低而还原电位较负(如-0.5 V)时, Vw>Vb, 可以获得Ni纳米管阵列; 当电解质浓度高而还原电位较负(如-0.5 V)时, 或者当电解质浓度低而还原电位更负(如-1.5 V)时, Vw≈Vb, 可以获得Ni纳米线阵列. 这种生长机制适用于多种金属纳米管或者纳米线阵列的可控制备.     

Effect of isothermal annealing on degree of crystallinity and mechanical properties of poly(l‐lactide‐co‐glycolide)

We investigated the effect of isothermal annealing on the degree of crystallinity and mechanical properties of a random copolymer‐poly(l‐lactide‐co ‐glycolide) (PLLGA)‐with monomer molar ratios of 85/15 (PLLGA85/15) by performing polarizing optical microscopy, differential scanning calorimetry, and X‐ray diffraction, and studying the tensile properties. Isothermal annealing of PLLGA at 130 °C was conducted to improve the degree of crystallinity of the copolymer; the maximum degree of crystallinity (44.5%) was achieved after 60 min of annealing. The crystal size/perfection was observed to increase with annealing time. The highest tensile strength of 65.8 MPa was achieved after 80 min of annealing. However, the degree of crystallinity and tensile strength can only reach to certain extent. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis, growth, spectral, thermal and photoluminescence properties of a new semiorganic NLO crystal—Thiosemicarbazide lithium chloride [TSLC]

Thiosemicarbazide lithium chloride [TSLC] a new semiorganic nonlinear optical crystal has been synthesized. Single crystals by TSLC have been grown by slow evaporation solution growth technique at room temperature. Chemical composition of the synthesized material was confirmed by elemental analysis. Powder X-ray diffraction (XRD) pattern of the grown crystal has been studied. Functional groups present in the materials were identified by FT IR spectral analysis ranging between 4000 and 450 cm⁻¹. The optical transmission was studied through UV-vis spectrophotometer. Thermal analysis is carried out on the crystal and inferred to be stable at 176 °C. The second harmonic generation (SHG) of the TSLC crystal was confirmed using Nd:YAG laser and also fluorescence spectral analysis is carried out for the TSLC crystal.     

Growth, optical and thermal studies on organic nonlinear optical crystal: 2-Furoic acid

2-Furoic acid (2FA), an organic third order nonlinear optical single crystal, has been synthesized and grown successfully by slow solvent evaporation technique. The space group and lattice parameters of the grown crystals were obtained by single crystal X-ray diffraction analysis. The presence of the functional groups was confirmed by Fourier Transform Infrared (FTIR) spectroscopy. Optical absorption studies reveal low absorption in the UV and visible regions and the UV cut-off wavelength is found to be at 240 nm. The thermal stability of the material examined by TGA analysis, reveals that the material is thermally stable up to 130 °C. The third order nonlinear optical parameters (nonlinear refractive index, nonlinear absorption coefficient and real and imaginary parts of the third order nonlinear optical susceptibility) were derived by Z-scan technique. This reveals that the crystal has a negative refractive index, which indicates the defocusing nature of the material.     

Annealing temperature effect on the structural, optical and electrical properties of ZnS thin films

Zinc sulfide thin films were prepared on glass substrates at room temperature using a chemical bath deposition method. The obtained films were annealed at temperatures ranging from 100 to 500 °C in steps of 100 °C for 1 h. The films were characterized by X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray analysis (EDX), optical absorption spectra, and electrical measurements. X-ray diffraction analysis indicates that the deposited films have an amorphous structure, but after being annealed at 500 °C, they change to slightly polycrystalline. The optical constants such as the refractive index (n_r), the extinction coefficient (k), and the real (ε₁) and imaginary (ε₂) parts of the dielectric constant are calculated depending on the annealing temperature. Aside from the ohmic characteristics of the I-V curve, a nonlinear I-V curve owing to the Schottky contact is also found, and the barrier heights (?_bn) for Au/n-ZnS and In/n-ZnS heterojunctions are calculated. The conductivity type was identified by the hot-probe technique.     

Growth, optical, mechanical and dielectric studies on NLO active pure and metal ion doped single crystals of bis-thiourea zinc chloride

Good quality single crystals of pure and metal ion (Ni²⁺) doped bis-thiourea zinc chloride (BTZC) possessing excellent nonlinear optical properties have been grown from aqueous solution by the slow solvent evaporation technique. The lattice parameters of the grown crystals are determined by single crystal X-ray analysis. The well defined sharp peaks in the powder X-ray diffraction pattern reveals the crystalline perfection and the EDAX spectrum confirms the presence of dopant in the lattice of the parent crystal. The DRS UV-visible spectral study reveals improved transparency for the doped crystal, ascertaining the inclusion of metal ion in the lattice. The optical band gap of the pure and doped crystals was calculated to be 4.8 and 5.2 eV respectively from the UV transmission spectrum. The vickers hardness test brings forth higher hardness value for Ni²⁺doped BTZC as compared to pure BTZC crystal. The dielectric measurement exhibits very low dielectric constant and dielectric loss at higher frequencies for both the pure and Ni²⁺doped BTZC. The existence of second harmonic generation signals in the crystal also has been confirmed by performing the Kurtz powder test.     

Studies on the growth and characterization of tris (glycine) calcium(ΙΙ) dichloride—a nonlinear optical crystal

A systematic characterization of a novel nonlinear optical material tris (glycine) calcium(ΙΙ) dichloride (TGCC) is performed. The solubility and metastable zone width of TGCC were studied. TGCC single crystal of dimensions 34×23×5 mm³ was grown by the slow evaporation technique. Single crystal X-ray diffraction studies reveal that the crystal belongs to orthorhombic system. Energy dispersive X-ray analysis confirms the presence of elements in the crystal. Structural perfection of the as-grown single crystal was studied through multicrystal X-ray diffraction analysis. The thermal characteristics of TGCC were analyzed by thermogravimetric and differential thermal analysis and differential scanning calorimetry. The transmittance of TGCC crystal has been used to calculate the optical band gap of the crystal. Chemical etching studies of TGCC crystal was carried out. The dielectric and mechanical behavior of the crystals were analyzed. The second harmonic conversion property of TGCC was identified by the Kurtz and Perry powder technique and was observed to be higher than that of KDP.