二元光学元件

二元光学元件是一种新型的衍射光学元件,它对光学仪器的小型化、集成化起着很重要的作用。本文介绍了二元光学元件的概况,衍射透镜理论,二元光学元件的制造方法以及发展趋势。     

激光诱导光栅技术测量磁性液体的热扩散系数

在室温和常压下采用激光诱导光栅技术实验测量不同体积分数的磁性液体的热扩散系数,体积分数分别为5%,6%,7%,8%,9%和10%。由于在磁性液体薄片上的升温非常小以及毫秒级的测量时间,自由对流所产生的影响可以忽略不计。用激光诱导光栅技术测的数据与已有文献中的实验数据比较吻合,从而说明该技术在磁性液体的热扩散测量上是可行的。     

关于康托集类光栅的实验探究

设计制作了康托集分形衍射光栅,通过对康托集分形光栅3个阶段的夫琅禾费衍射现象的观察,根据惠更斯-菲涅耳原理,得到了一维康托集分形光栅的夫琅禾费衍射光强分布特性.     

DNA纤维的X射线衍射分析与双螺旋结构的发现

概述了DNA化学结构式确立的过程,介绍了x射线衍射分析的概念、原理和方法,阐述了物理学家威尔金斯和物理化学家富兰克林在用实验事实证明DNA双螺旋结构方面所作出的巨大贡献。     

Effects of shaded facets on the performance of metal-coated etched diffraction grating demultiplexer

A finite-difference time-domain (FDTD) method combined with a periodic boundary condition is used to analyze the diffraction efficiency of an etched diffraction grating (EDG) demultiplexer coated with a metallic film at the backside. The numerical results show that the diffraction loss is mainly due to the scattering effect of shaded facets of a metal-coated grating at both the polarizations. However, the same shaded facets can produce a higher loss for a TM polarization than that for a TE polarization, which induces a higher polarization dependent loss (PDL) of the demultiplexer.     

SRPES investigation of tungsten oxide in different oxidation states

The microstructure and morphology of metal oxide films have a large influence on the sensitivity, selectivity and stability of the gas sensors and catalysts. Considering that the sensing properties of thin film sensors are strongly related to their microstructures and to the exact stoichiometry of their surfaces, an accurate control of these parameters is extremely important for the production of sensors with reproducible behavior. In this paper, an influence of preparation and annealing conditions on the physical and chemical properties of tungsten oxide thin film is investigated. Two types of samples having polycrystalline structure were prepared by different methods (deposition under UHV conditions, oxidation of metallic tungsten layer in air). The samples were reduced by heating in UHV at different temperatures and/or by Ar ion bombardment. It was found that the stability of tungsten oxide layer with respect to the treatment procedures depends strongly on the preparation conditions of the sample. The reduction process is discussed in terms of different oxidation states resolved in the W4f photoelectron spectrum. Easy reducibility of the tungsten oxide layer prepared by vacuum deposition was found to be a consequence of its nano-crystalline structure.     

New terahertz dispersive device for single-shot spectral measurements of terahertz pulse

A new terahertz dispersive device designed for single-shot spectral measurements of broadband terahertz pulses is proposed. With two-dimensional quasi-randomly distributed element design, the device exhibits approximately the dispersive property of single-order diffraction in far field. Its far-field diffraction pattern is experimentally verified employing a continuous terahertz source centered at 2.52 THz and a pyroelectric focal-plane-array camera, which is in good agreement with the numerical result. The device provides a new approach for direct single-shot spectral measurements of broadband terahertz waves.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

制作多焦点全息透镜的新方法

本文提出了一种制作多焦点全息透镜的新光路,消除了干板上的多余条纹,从而有效地抑制了杂散光,并导出了用此光路制作的平面型全息透镜的衍射效率,给出了实验结果。     

Epitaxial growth of cobalt clusters on the bare and the oxide film grown on NiAl(1 0 0) surfaces

The structure of the nano-sized cobalt clusters on bare NiAl(1 0 0) and an oxidized NiAl(1 0 0) surfaces have been investigated by AES, LEED and RHEED. The deposition of Co onto bare NiAl(1 0 0) at room temperature led to small crystalline Co grains and surface asperities of substrate. The latter is likely induced by replacement of surface Al, Ni atoms by Co deposit. At 800 K Co particles aggregate to form clusters, but incorporation of Co into bulk NiAl(1 0 0) could occur upon annealing at 900 K. On the other hand, pure face-centered cubic (fcc) phase of Co crystallites of ≈1 nm in diameter with inclusion of smaller-sized particles (D < 1 nm) are observed on Θ-Al₂O₃ after Co deposition at room temperature. After annealing the Co nano-clusters grow larger at expense of small particles (D ≈ 3 nm), where the [1 1 0] and [−1 1 0] axis of the Co(0 0 1) facets are parallel to the [1 0 0] and [0 1 0] directions of (0 0 1)oxide, respectively. The in-plane lattice constant of Co clusters is ca. 4% larger than that of bulk Co, yielding less strain at the Co/oxide interface. A 15° ± 10% random orientation of the normal to (0 0 1) facet of Co clusters with respect to (0 0 1)oxide surface was deduced from the “arc”-shape reflection spots in RHEED. These results suggest that both orientation and phase of Co clusters are strongly affected by the nature and structure of oxide surface.