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41.
用电子顺磁共振方法研究了一些高温超导氧化物样品的零场非共振吸收信号和正常的ESR共振信号。认为这种方法可以作为鉴别样品进入超导态的实验判据之一。利用零场非共振吸收实验给出的下临界磁场Hc1(T)很好地遵多Hc1(T)=Hc1(0)(1-T&^2/Tc^2)。 相似文献
42.
43.
四溴双酚A锑铝双金属化合物的合成及其阻燃性能 总被引:1,自引:0,他引:1
以四溴双酚A(TBA)合成了在水和空气中稳定的四溴双酚A合锑铝双金属化合物(TBASA).通过IR、1HNMR和元素分析予以表征,并研究了其对聚乙烯(PE)和聚环氧乙烷(PEO)的阻燃性能.结果表明,这种分子中含有溴、锑和铝的化合物,对聚乙烯和聚环氧乙烷等高聚物材料有高的阻燃性能与消烟效果. 相似文献
44.
The dendrite growth process of transparent NaBi(WO4)2 with small prandtl and high melting point was studied by using the in-situ observation system. According to the dynamic images and detailed information, there are two kinds of restriction effect on
the dendrite growth, the competition between arms and branches and the convection in the melt. The dendrite growth rate was
time dependent, and the rate of arm growth reached the maximum 5.8 mm/s in the diffusive-advective region and rapidly decreased
in the diffusive-convective region. The growth rate of branch had the same change trends as the arm’s. Based on the EPMA-EDS
data of solidification structure of quenched NaBi(WO4)2 melt, it was found that there were component differences from stoichiometric concentration in the melt near the interface
during the growth process.
Supported by the National Natural Science Foundation of China (Grant No. 50331040) and the Innovation Funds from Shanghai
Institute of Ceramics, Chinese Academy of Sciences (Grant No. SCX0623) 相似文献
45.
Highly ordered composite nanowires with multilayer Ni/Cu and NiFe/Cu have been fabricated by pulsed electrodeposition into
nanoporous alumina membrane. The diameter of wires can be easily varied by pore size of alumina, ranging from 30 to 100 nm.
The applied potential and the duration of each potential square pulse determine the thickness of the metal layers. The nanowires
have been characterized by transmission electron microscopy (TEM), magnetic force microscopy (MFM), and vibrating sample magnetometer
(VSM) measurements. The MFM images indicate that every ferromagnetic layer separated by Cu layer was present as single isolated
domain-like magnet. This technique has potential use in the measurement and application of magnetic nanodevices. 相似文献
46.
Hua Zhang Nabil A. Amro Robert Elghanian Joseph Fragala 《Applied Surface Science》2006,253(4):1960-1963
A method, combining micro-contact printing (μCP), wet chemical etching and reactive ion etching (RIE), is reported to fabricate microstructures on Si and SiOx. Positive and negative structures were generated based on different stamps used for μCP. The reproducibility of the obtained microstructures shows the methodology reported herein could be useful in Micro-Electro-Mechanical Systems (MEMS), optical and biological sensing applications. 相似文献
47.
The 57Fe Mössbauer technique has been used to investigate the effect of zinc oxide substitution in (25???x)MnO–xZnO–15Fe2O3–60B2O3 glass system (x?=?0, 5, 10, 15 and 20 mol% of ZnO ). Mössbauer absorption spectra for all the samples recorded at room temperature suggest the existence of the two paramagnetic quadrupole doublets. The observed variations in hyperfine parameters have been explained on the basis of cations distribution and exchange interaction at the lattice sites and it is concluded that B–B interaction increases while the metal–metal interaction decreases due to replacement of manganese oxide by zinc oxide. These results suggest that the present glass system exhibits a paramagnetic behaviour that changes towards the weak paramagnetic when manganese oxide was replaced with zinc oxide. 相似文献
48.
不良导体导热系数测定实验中仪表风扇对实验结果的影响 总被引:1,自引:0,他引:1
根据对物体冷却规律的分析,并从实验结果比较,指出稳态法测不良导体导热系数实验中,设置散热盘的冷却过程应与其在稳态过程时的强迫对流散热方式保持一致. 相似文献
49.
TiO2 thin films were prepared under various conditions by using a reactive RF sputtering technique. The structural, optical and electrical characteristics of the films have been investigated. All as-deposited films were amorphous. After annealing at T > 673 K, the crystallinity of the observed tetragonal anatase phase appeared improved. The optical band gap, determined by using Tauc plot, has been found to amount to 3.38 ± 0.03 and 3.21 ± 0.03 eV for the direct and indirect transition, respectively. Also the complex optical constants for the wavelength range 300-2500 nm are reported. Using the two-point probe technique, the dark resistivity has been measured as a function of the film thickness, d. The resistivity, ρ, of the samples has been found to decrease markedly with increasing thickness, but only for d < 100 nm. The behaviour of ρd versus d was found to fit properly with the Fuchs and Sondheimer relation with parameters ρo = 4.95 × 106 Ω cm and mean free path, l = 310 ± 2 nm. The log ρ versus 1/T curves show three distinct regions with values for the activation energy of 0.03 ± 0.01, 0.17 ± 0.01 and 0.50 ± 0.02 eV, respectively. 相似文献
50.
用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Qbd)和击穿电压(Voltage to Breakdown, Vbd). 研究结果表明,低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小,而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大,击穿电压测试值也发现与击穿电量
关键词:
薄氧
可靠性
击穿电压
击穿电量 相似文献