铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。     

PtRu/C电催化剂上甲醇吸附氧化过程的电化学原位红外光谱

采用调变的多元醇法制备了高分散的Pt/C, PtRu/C和Ru/C电催化剂. XRD计算结果表明, PtRu/C电催化剂的平均粒径和合金度分别为2.2 nm和71%. 采用电化学方法和原位傅里叶变换红外反射光谱方法(in situ FTIRS)研究了甲醇在3种电催化剂上的吸附氧化过程, 发现PtRu/C对甲醇的催化活性明显高于Pt/C, Ru的加入一方面影响了甲醇在Pt上的解离吸附性能, 另一方面提供了Ru-OH物种, 从而抑制了低电位下电催化剂中毒. 红外光谱研究结果表明, 线性吸附态CO(COL)是主要毒化物种, 反应产物主要是CO2, 还有少量的甲酸甲酯. 根据实验结果讨论了甲醇在PtRu/C电催化剂上的氧化机理.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

原位反应法制备丙烯酸钐/丁腈橡胶复合材料及其荧光性能研究

通过两种不同的原位反应制备了丙烯酸钐/丁腈橡胶[Sm(AA)₃/NBR]复合材料.SEM和TEM结果表明,原位反应使稀土配合物的粒径减小,且均匀地分散在基体聚合物中.荧光分析表明,以260nm作为激发波长时,两种复合材料在379nm(⁴D_1/2,⁶P_7/2→⁶H_5/2)和418nm(⁴L_15/2,⁴G_1/2→⁶H_5/2)处出现了与自由离子基本相同的发射峰(374和390nm),属于受配体微扰的中心离子发光.原位反应制备的复合材料在不同激发波长下的荧光强度均比非原位反应体系的荧光强度高.随着稀土含量的增加,其荧光强度增加,至稀土质量分数为30%时出现荧光猝灭.     

CO和CH_30N0在Al_20_3负载钯铜合金催化剂上合成草酸二甲酯的原位红外光谱研究

利用原位红外光谱技术研究了常压下CO和CH3ONO多相催化合成草酸二甲酯的反应．发现在草酸二甲酯生成的同时还存在副反应，副产物NO继续与CO反应生成CO2和N2O．铜在合金催化剂中起辅助作用，铜分散把，使CO桥式吸附减少，线式吸附增多．主反应与CO桥式吸附无关，而副反应却依赖于CO的桥式吸附．CO线式吸附具有更高的反应活性．     

CO和SCN~-在高分散Pt及Pd表面异常红外光学行为的电化学现场FTIR反射光谱研究

在玻碳基底上沉积Pt和Pd，在以CO和SCN-为探针分子的电化学现场FTIR反射光谱研究中，首次观察到异常红外光学行为，其中包括吸附物种的谱带方向倒反以及谱峰强度显著增强等．     

In situ X-ray diffraction study of reduction processes of Fe3O4- and Fe1−xO-based ammonia-synthesis catalysts

The temperature-programmed reduction process of two types of industrial ammonia-synthesis catalysts, A110 and ZA-5, which are, respectively, based on Fe₃O₄ and Fe_1−xO precursors, were studied by in situ X-ray power diffraction (XRD). It has been found that the ZA-5 has lower reduction temperature and faster reduction rate, and its active phase α-Fe possesses a higher value of lattice microstrain than A110. The simulation based on Rietveld refinement has also shown that the shape of α-Fe grain of ZA-5 has a mixed shape of cube and sphere with more exposing (111) and (211) planes, while that of A110 looks like a concave cube with more exposing (110) planes. Based on the results obtained, a growth model of α-Fe during the reduction of Fe₃O₄- and Fe_1−xO-based ammonia-synthesis catalysts is proposed, and the origins for the activity difference has been also discussed.     

聚[(甲氧基乙氧基乙氧基)1.0(乙氧基吡咯烷酮)1.0]膦腈的合成及性能研究

用三氯化铝催化六氯三聚膦腈开环聚合制得线性聚二氯膦腈(PDCP), 通过PDCP磷原子上的亲核取代反应, 合成了新的水溶性高分子聚[(甲氧基乙氧基乙氧基)_1.0(乙氧基吡咯烷酮)_1.0]膦腈(P3), 用³¹P NMR, ¹H NMR, ¹³C NMR和IR对其结构进行了确证, 用DSC测定了其玻璃化转变温度T_g和熔融温度T_m, 用蒸汽压渗透法(VPO)测定了其数均分子量. 改进了聚二(乙氧基吡咯烷酮)膦腈(P2)的合成方法. 体外降解实验表明, P3具有和P2类似的pH响应性降解行为, 降解速率在pH=5.0时最快, 而在pH=7.4和8.0时较慢. P3在所测试的3个pH缓冲溶液中均比P2降解慢. 用³¹P NMR、薄层色谱(TLC)和滴定法对降解产物进行了检测, 初步推断了P3在不同pH介质中的水解机理, 其在pH=5.0的缓冲溶液中的降解, 除侧链断裂外, 聚膦腈的骨架也裂解; 而在pH=7.4和8.0时的降解仅为侧链的断裂. 用噻唑蓝(MTT)比色法进行的体外细胞毒性评价实验表明, P3及其在pH=5.0的缓冲溶液中降解49 d后的产物均对细胞表现出了很好的生物相容性, 而且其降解产物在浓度为800 μg/mL时还表现出一定的促进细胞增殖作用.     

CO吸附原位红外光谱结合分子模拟计算研究FCC汽油加氢脱硫催化剂的选择性

以脱硫选择性不同的2组催化裂化汽油加氢脱硫催化剂为研究对象, 采用CO吸附原位红外光谱表征了2组催化剂的活性相特征, 并通过分子模拟计算方法比较了助剂Co加入前后噻吩和1-己烯在催化剂表面的电荷分布、吸附能及其加氢反应的活化能等, 探讨了助剂Co的加入对选择性加氢脱硫催化剂脱硫选择性的作用机理. 结果表明, 加氢脱硫催化剂CoMoS活性相的增加有利于提高催化剂的加氢脱硫/加氢降烯烃(HDS/HYD)选择性. 与1-己烯加氢位相比, Co的加入显著提高了噻吩分子加氢位的缺电子性, 噻吩在催化剂表面的吸附度增强, 显著降低噻吩加氢反应的能垒, 从而使噻吩加氢反应更易进行. 这也表明CoMoS为高HDS活性、高HDS/HYD选择性的活性相.     

宽带隙Cu(In,Al)Se2薄膜的制备及表征

以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.