交换弹性磁性材料的研究进展

对近年来交换弹性磁性材料（包括高性能永磁和磁存储介质）等方面的最新研究进展作了一些简单的综述，总结了存在的一些问题并指出了用以解决这些问题的可能途径，为进一步的深入研究提供参考。     

GeV能量的Fe离子在C60薄膜中的辐照效应研究

利用傅立叶转换红外光谱和Raman谱仪分析了0.98 GeV的Fe离子在电子能损Se为3.5 keV/nm时， 不同辐照剂量（5×1010 —8×1013 ions/cm2)下， 在C60薄膜中引起的辐照损伤效应。 分析表明， Fe离子辐照引起了C60分子的聚合与损伤。 在辐照剂量达到一中间值1×1012 ions/cm2， C60分子的损伤得到部分恢复， 归因于电子激发引起的退火效应。 通过对Raman数据的拟合分析， 演绎出Fe离子辐照在C60材料中形成的潜径迹截面或引起损伤的截面约为1.32×10-14 cm2。     

多晶硅薄膜太阳能电池的研究进展

1前言太阳能的光伏应用已给我们展示了非常广阔的前景．因此,可将太阳能转化为电能的太阳能电池的研制和发展正日益引起关注．硅太阳能电池是最有发展前景的．目前,晶体硅太阳电池因丰富的原材料资源和成熟的     

Photoinduced Resistance Change in an Oxygen-Deficient La 0.9 Sr 0.1 MnO 3-δ Thin Film

Photoinduced resistance change （ △ R/R） in an oxygen-deficient La0.9Sr0.1MnO3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75 ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △ R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic devices.     

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.     

Structure Stability of LaAlO3 Thin Films on Si Substrates

A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.     

Reduced-temperature ordering of FePt nanoparticle assembled films by Fe30Pt70/Fe3O4 core/shell structure

In this paper, Fe30Pt70/Fe3O4 core/shell nanoparticles were synthesized by chemical routine and the layered polyethylenimine （PEI）-Fe30Pt70/Fe3O4 structure was constructed by molecule-mediated self-assembly technique. The dimension of core/shell structured nanoparticles was that of 4nm core and 2 nm shell. After annealing under a flow of forming gas （50%Ar2＋30%H2） for 1 h at or above 400℃, the iron oxide shell was reduced to Fe and diffused to Pt-rieh core, which leaded to the formation of L1. phase FePt at low temperature. The x-ray diffraction results and magnetic properties measurement showed that the chemical ordering temperature of Fe30Pt70/Fe3O4 core/shell nanoparticles assembly can be reduced to as low as 400℃. The sample annealed at 400℃ showed the eoereivity of 4KOe with the applied field of 1.5T. The core/shell structure was suggested to be an effective way to reduce the ordering temperature obviously.[第一段]     

An optical fiber methane gas sensing film sensor based on core diameter mismatch

<正>An optical fiber evanescent wave methane gas sensor based on core diameter mismatch is reported.The sensor consists of a multimode fiber in which a short section of standard single-mode fiber,coated with the inclusion of cryptophane molecules E in a transparent polysiloxane film,is inserted.The sensing principle is analyzed by optical waveguide theory.For different sensing film thicknesses and interaction lengths,the sensor signal is investigated within the methane concentration range of 0-14.5%(v/v).It is shown that the sensor signal with the thickness of 5μm and the interaction length of 3 mm strengthens linearly with the increasing concentration of methane,with a slope of 0.0186.The best detection limit of the sensor for methane is 2.2%(v/v) with a response time of 90 s.This sensor is suitable for the detection of methane concentration below the critical value of 5%.