瞬态吸收光谱研究苯与H2O2水溶液的反应机理

利用瞬态吸收光谱技术研究了不同条件下苯与H2O2水溶液复相体系的激光闪光光解情况,考察了其瞬态物种的生长和衰减等行为.研究表明, •OH自由基和苯反应生成C6H6-OH加合物,其反应速率常数在近中性和酸性条件下分别为(8.0～8.1)×109 L•mol－1•s－1和7.7×109 L•mol－1•s－1, 而在碱性时则为(6.7～6.9)×109 L•mol－1•s－1,在有氧条件下C6H6-OH加合物被氧化为C6H6-OHO2后,进一步分解成对苯醌;C6H6-OH加合物和激发态的苯也可直接与H2O2反应生成对苯醌,三种反应途径同时存在.     

汞代N-乙烯基咔唑-丙烯酸共聚物的合成与研究

制备线型和网状N-乙烯基咔唑-丙烯酸甲酯共聚物后,用三氟乙酸汞分别在四氢呋喃(THF)和二氯甲烷中进行汞化反应,得到相应的线型和网状汞代咔唑共聚物。这些共聚物经THF溶解或溶胀后,用氢氧化钠水溶液水解,得到相应的水溶性线型高分子和吸水性网状高分子,憎水性汞代咔唑共聚物在THF中由I₂取代汞;亲水性汞代咔唑共聚物在水溶液中由KI₃取代汞。汞代咔唑高分子链在不同溶剂中可以产生不同的形态变化。     

一个特殊的二维除数问题

设△*(a,b;x)为D*(a,b;x)=∑manb≤x(m,n)=11,(1≤a＜b,(a,b)=1)的余项.本文在黎曼假设下利用指数和方法获得了△*(a,b;x)上界估计的一个较好估计.     

Constant schubweg for hole transport in corona charged fluorethylenepropylene

Thin (25 m) foils of Teflon^® FEP are charged positively in a constant-current corona triode with currents between 1–6×10^–9 A to a voltage of 3 kV. Experimental results give the voltage as a function of time during charging and during the discharge which occurs after the corona current has been turned off. Results can be interpreted in terms of a theory which introduces shallow surface and deep bulk traps and assumes that the field-induced carrier drift is characterized by a constant schubweg.     

Perceptual simplification for model-based binaural room auralisation

Design of computationally efficient yet perceptually realistic room auralisation algorithms require a careful selection of the early reflections to be auralised. A perception-based simplification algorithm is presented for the selection of the early reflections using a criterion which depends both on the arrival time and on the angle of incidence of the early reflection with respect to the listener. Results of two subjective tests for the evaluation of the proposed algorithm are presented. The proposed algorithm is shown to provide a significant reduction in the number of early reflections without significantly affecting the tested localisational or spatial qualities of auralisation.     

Dielectric and interfacial properties of InP plasma-grown oxides

Methods of dielectric analysis have been employed to investigate the frequency dispersion of InP-oxide dielectric in MOS and MOM devices. The Cole-Cole empirical method has indicated a wide range of relaxation time for the interfacial polarization. This has been interpreted in terms of a model of carrier injection from the gate metal into the oxide gap states. The model is proposed in conjunction with the anomalous hysteresis in the MOM C-V characteristics and could be applied to other MIS systems.Formerly with the department of Engineering, Cambridge University, U.K.     

Short pulse laser microforming of thin metal sheets for MEMS manufacturing

Continuous and long-pulse lasers have been used for the forming of metal sheets for macroscopic mechanical applications. However, for the manufacturing of micro-electro-mechanical systems (MEMS), the applicability of such type of lasers is limited by the long-relaxation-time of the thermal fields responsible for the forming phenomena. As a consequence of such slow relaxation, the final sheet deformation state is attained only after a certain time, what makes the generated internal residual stress fields more dependent on ambient conditions and might make difficult the subsequent assembly process for MEMS manufacturing from the point of view of residual stresses due to adjustment.The use of ns laser pulses provides a suitable parameter matching for the laser forming of an important range of sheet components used in MEMS that, preserving the short interaction time scale required for the predominantly mechanic (shock) induction of deformation residual stresses, allows for the successful processing of components in a medium range of miniaturization but particularly important according to its frequent use in such systems.In the present paper, a discussion is presented on the specific features of laser interaction in the timescale and intensity range needed for thin sheet microforming with ns-pulse lasers along with relevant modelling and experimental results and a primary delimitation of the parametric space of the considered class of lasers for the referred processes.