Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition

We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were investigated and the post-annealed ZnO films grown at T _g =700^oC have very smooth surfaces and the rms with roughness is about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epilayer and GaN/sapphire substrates. It is confirmed by AFM that growth temperature of 700^oC helps the films grow in step-flow growth mode. It is observed by cathode luminescence spectrum that the ZnO film grown at 700^oC has very low visible luminescence, indicating the decrease of the deep level defects. It is also revealed by Hall measurements that carrier concentration is decreased by increasing the growth temperatures. It is suggested that low temperature buffer layer growth and post-annealing technique can be used to fabricate ZnO hetero-epitaxy.     

Aryltriazene photopolymer thin films as sacrificial release layers for laser-assisted forward transfer systems: study of photoablative decomposition and transfer behavior

Thin films of a tailor-made photodecomposible aryltriazene polymer were applied in a modified laser-induced forward transfer (LIFT) process as sacrificial release layers. The photopolymer film acts as an intermediate energy-absorbing dynamic release layer (DRL) that decomposes efficiently into small volatile fragments upon UV laser irradiation. A fast-expanding pressure jet is generated which is used to propel an overlying transfer material from the source target onto a receiver. This DRL-assisted laser direct-write process allows the precise deposition of intact material pixels with micrometer resolution and by single laser pulses. Triazene-based photopolymer DRL donor systems were studied to derive optimum conditions for film thickness and laser fluences necessary for a defined transfer process at the emission wavelength of a XeCl excimer laser (308 nm). Photoablation, surface detachment, delamination and transfer behavior of aryltriazene polymer films with a thickness from 25 nm to ∼400 nm were investigated in order to improve the process control parameters for the fabrication of functional thin-film devices of microdeposited heat- and UV-sensitive materials.     

Photo-initiation of intermolecular bonding and oxide deposition in Ti-based alkoxide solutions

Photoexposure of a water-stable, Ti-alkoxide, (OC₆H₆N)₂Ti(OC₆H₂(CH₂N(CH₃)₂)₃-2,4,6)₂, dissolved in a water/pyridine solution yielded an insoluble, solid phase, present in the form of suspended particles and a deposited material on the vertical side-wall of the solution container. Raman analysis of these photoproducts confirmed the UV-initiation of hydrolysis and condensation reactions in the alkoxide reagent. The excitation wavelength dependence of the photostructural effects observed provides insight into the mechanisms contributing to these photoinduced phenomena. The results are extended to enable the photopatterned deposition of physical relief structures directly from solution in this system.     

Plasma etching of As2S3 films for optical waveguides

Chalcogenide glasses are good candidate materials for ultra-fast non-linear optic devices. In this work, we present the photolithographic process and the plasma etching of arsenic tri-sulphide (As₂S₃) film. The films were deposited on thermally oxidized silicon substrates by ultra-fast pulsed laser deposition. To protect As₂S₃ film from photo-resist developer, thin resist layer ∼100-200 nm was remained on the UV exposed area by controlling resist development time. After removing the protective layer in oxygen plasma, As₂S₃ waveguides were patterned in inductively coupled plasma reactive ion etching (ICP-RIE) system using CF₄-O₂ gas mixture. We investigated the etch rate and the etch selectivity to photo-resist of As₂S₃ as a function of bias power, induction power, operating pressure, and gas flow rate ratio of CF₄ and O₂. The film is mainly etched by the chemical reaction with fluorine radicals. The content of oxygen in the plasma determines the etched sidewall profiles and nearly vertical profile was obtained at high oxygen content plasma.     

High dynamic range measurement of temporal shape and contrast of ultrashort UV pulses

This paper presents an experimental technique for measurement of the contrast ratio of ultrashort UV pulses. As a multiple-shot device based on the scheme of difference frequency generation this is, to our knowledge, the only cross correlator in the UV so far, which offers a dynamic range of 10⁷ and operates with input pulse energies as low as 5 μJ. By changing the cross correlator into single-shot mode, the temporal shape of the UV pulse can be measured. Received: 26 October 1998 / Revised version: 13 January 1998 / Published online: 28 April 1999     

Photorefractive fixed optical correlator

A photorefractive optical correlator stored and fixed in lithium niobate is presented. The device shows good correlation characteristics together with very high output efficiency and insensitivity to optical erasure during read-out. Received: 10 May 1999 / Revised version: 21 June 1999 / Published online: 16 September 1999     

Bio-inspired dual surface modification to improve tribological properties at small-scale

In miniaturized devices like micro/nano-electro-mechanical systems (MEMS/NEMS), the critical forces, namely adhesion and friction restrict the smooth operation of the elements that are in relative motion. MEMS/NEMS are traditionally made of silicon, whose tribological properties are not good. In this paper, we present an investigation on the approach of dual surface modification of silicon surfaces and their tribological properties at micro-scale. The dual surface modification is a combination of topographical and chemical modifications. As the topographical modification, micro-patterns with varying shapes of pillars and channels were fabricated on Si(1 0 0) wafer surfaces using photolithography method. Chemical modification included the coating of micro-patterns with diamond-like carbon (DLC) and Z-DOL (perfluoropolyether, PFPE) thin films. The surfaces with combined modification were evaluated for their micro-friction behavior in comparison with those of bare Si(1 0 0) flat surfaces and the topographically/chemically modified silicon surfaces. Results showed that the surfaces with dual modification exhibited superior tribological properties. These results indicate that a combination of topographical and chemical modification is very effective in enhancing tribological properties at small-scale. The combined surface treatments such as the ones investigated in the current work could be useful for tribological applications in small-scale devices such as MEMS/NEMS. The motivation for undertaking the dual modification approach comes from an earlier observation made on the significant influence of the surface characteristics of lotus leaf on its micro-friction behavior.     

F2 laser induced oxidation of inorganic material

Transparent SiO₂ thin films were selectively fabricated on Si wafer by 157 nm F₂ laser in N₂/O₂ gas atmosphere. The F₂ laser photochemically produced active O(¹D) atoms from O₂ molecules in the gas atmosphere; strong oxidation reaction could be induced to fabricate SiO₂ thin films only on the irradiated areas of Si wafer. The oxidation reaction was sensitive to the single pulse fluence of F₂ laser. The irradiated areas were swelled and the height was approximately 500-1000 nm at the 205-mJ/cm² single pulse fluence for 60 min laser irradiation. The fabricated thin films were analytically identified to be SiO₂ by the Fourier-transform IR spectroscopy. The SiO₂ thin films could be also removed by subsequent chemical etching to fabricate micro-holes 50 nm in depth on Si wafer for microfabrication.     

On the spray-drying deposition of TiO2 photocatalytic films

The photocatalytic activity of TiO₂ films deposited on different substrates by the spray-drying method using suspensions of commercially available TiO₂ (Degussa P25 or Tronox) as starting material was studied. The influence of the type of the initial TiO₂, preparation conditions (temperature of the substrate during the film deposition, temperature of the post-deposition annealing), substrate material (glass, fused silica, stainless steel and graphite), the presence of additives in the spraying suspension (polyethylene glycol, ethylene glycol and acetylacetone) and its sonication before spraying on the morphology, size of crystallites and phase composition (rutile/anatase ratio) was studied. Optimal conditions for spray deposition of the films are suggested.