Effects of N2 addition on nanocrystalline diamond films by HFCVD in Ar/CH4 gas mixture

Nanocrystalline diamond (NCD) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/N₂/CH₄ gas mixtures. The effects of seeding process prior to deposition, the total gas pressure, and concentration of nitrogen on the grain size, morphology and bonding nature in HFCVD technique were investigated. The results indicated that a low total gas pressure is favorable for nanosized diamond crystallites. Films micrograph obtained from scanning electron microscopy showed diamond nanograins elongated with the addition of nitrogen in the plasma. Crystal structure investigations were carried out by X-ray diffraction measurements for deposited films. An increase in the size of crystallite is also observed from XRD measurements in NCD film when nitrogen was added in plasma. From Raman spectra, it was observed that the relative intensity of G peak increases indicating more graphite content after nitrogen added in the plasma. The effects of the nitrogen incorporation in nanocrystalline films in HFCVD are discussed.     

聚变实验堆真空室壳体成型残余应力分析

为了了解聚变实验堆真空室壳体表面残余应力的分布以及退火工艺对残余应力的影响,通过模拟分析和实验检测两种方式对不锈钢316LN冷压曲面和热压曲面残余应力进行研究,获得退火前后曲面表面残余应力的大小,得到冷压曲面和热压曲面残余应力的分布以及退火工艺对残余应力分布的影响。研究结果为分析成型工艺提供数据支撑,对中国聚变工程实验堆真空室的研究与制造具有重要意义。     

热压制备(AgSbTe2)100-x-(GeTe)x合金的热电性能

以Pb粉、Te粉、Ag粉、Ge粉为原材料,在真空气氛下合成(AgSbTe₂)_100-x-(GeTe)_x (x=80---90) (TAGS)合金热电材料, X射线衍射(XRD)分析表明,热压烧结后合金具有低温菱形结构. 通过热压烧结法将TAGS粉末制备成块体材料,运用XRD和扫描电子显微镜对材料的物相成分、 晶体结构和形貌进行了表征.采用直流四探针法测定样品的电导率,当样品两端的温差为1---4℃ 的情况下测量Seebeck系数.通过材料热电性能测试,研究了30---500℃温度范围内不同组分 样品性能参数的变化.结果表明,所制备的TAGS热电材料具有纳米结构, 其性能随着组分的变化而变化, TAGS-80具有较好的热电性能,在530℃时具有最高热电优值(ZT=1.80).     

“Hot Potato Voice” in Peritonsillitis: A Misnomer

The "hot potato voice" is widely recognized as a symptom of peritonsillar cellulitis or abscess; yet there have been no studies assessing the resonance characteristics of the vocal tract in peritonsillitis. Analysis was undertaken of formant frequencies in the articulation of the vowels /i:/. /a:/ and /u:/ in six subjects with peritonsillitis and compared with articulation once the peritonsillitis had settled. Significant variation was found in F1 when articulating /i:/ and in F2 when articulating /a:/, which are explainable by dyskinesis of the peritonsillar musculature. These findings were compared with six subjects articulating the same vowels with and without a hot potato in their mouth. Variation was found in both F1 and F2 when articulating /i:/, which can be related to interference of the potato with movement of the anterior tongue. The changes in the vocal tract differ in these two cases and the title "hot potato voice" in peritonsillitis is a misnomer.     

Surface texturing of polytetrafluoroethylene by hot embossing

In this study, hot embossing by reusable Ni mold with features in the form of rectangular diffraction gratings of 4 μm period was successfully employed for surface texturing of polytetrafluoroethylene (PTFE) film above the glass transition temperature of PTFE amorphous phase with the aim to enhance surface hydrophobicity. Imprint pressure was set to 0.5 MPa and it was at least tenfold lower than reported by other authors using cold stamping. Embossed gratings were clearly seen on the surface of all imprinted samples even after the annealing at 140 °C and aging for 1 month at room temperature. The best results were achieved when imprint temperature was 150 °C. Measurements of the water contact angle on imprinted PTFE surfaces have showed that increase of the average contact angle for the current test setup was 8°. Using imprint stamp with the more favorable features may lead to somewhat higher hydrophobicity.     

Hot embossing of PTFE: Towards superhydrophobic surfaces

Three types of reusable stamps with features in the form of 2D arrays of pits having lateral dimensions in the range of 2-80 μm and heights of 1.5-15 μm were successfully employed for the hot embossing of PTFE at temperatures up to 50 °C above the glass transition temperature of PTFE amorphous phase. Due to the softening of PTFE at the temperatures used in this study, we were able to decrease imprint pressure significantly when comparing with the imprint conditions reported by other authors. Impact of the imprint temperature, pressure and time on the fidelity of pattern transfer as well as on water repellency was tested. The best results of embossing were achieved by applying pressure of 10 kg/cm² for 2 min at 170 °C. In this case, flattening of a natural PTFE roughness and pretty accurate deep replicas of the stamp patterns were observable on the whole imprinted area. Improvement in water repellency was largest for the samples imprinted by Ni stamp patterned with a 2D array of 2 μm square pits spaced by the same dimension and having a depth of 1.5 μm. Cassie-Baxter wetting regime was observed for the deepest imprints with water contact angles up to the superhydrophobic limit.     

Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density

We investigated the drain avalanche hot carrier effect (DAHC) of p-type metal-oxide-semiconductor field effect transistor of 0.14 μm channel length (PMOSFET) with SiON gate dielectric. Using three different stress conditions of substrate maximum current, the changes to threshold voltage, maximum transconductance, saturation current and channel leakage current was monitored. Concurrently, the lateral distribution of interface trap density (N_it) and bulk trapped charge density (N_ot) with stress time has been extracted along the 70 nm half channels from gate edge to drain junction, which is the first endeavor in describing charge traps along sub 100 nm short channels. The degradation of the PMOSFET was described by combining electrical property with N_it and N_ot profiles. Hot electron punch through (HEIP) effect was evidenced by negative Not distribution near the drain junction while more severe hot carrier degradation was successfully demonstrated by the empirical power law dependence of the electrical parameters N_it and N_ot. We have studied the evolution of degradation behavior along highly scaled tens of nanometer channel, and N_it and N_ot profile offers systematic study and interpretation of degradation mechanism of hot carrier effect in MOSFET devices.     

热电子等离子体的低频交换不稳定性

本文用磁流体理论,导出了包含导电端板“线结”效应的热电子等离子体低频交换模的色散关系,分析了热电子环的稳定作用,求出了稳定性判据。“线结”效应能大大降低交换模的增长率。取热电子密度为零,就得到简单流体等离子体的结果。     

热等静压对NbTi/Cu多芯超导线加工过程的影响

采用传统方法生产的NbTi/Cu多芯超导线在生产芯数较多的超导线时存在填充系数较大的问题,这直接影响了芯丝的整齐排布,所以组装完成后加入热等静压过程.研究了经过热等静压和未经过热等静压的NbTi/Cu多芯超导线的加工性能.经过试验证明,经过100～150MP,2小时热等静压处理的NbTi/Cu多芯超导线坯锭在加工过程中具有良好的加工性能,提高了超导线复合坯锭的成品率;而未经过热等静压处理的NbTi/Cu多芯超导线坯锭加工性能较差,坯锭内部缺陷较多.     

Influence of chemistry and hot rolling conditions on high permeability non-grain oriented silicon steel

This paper discusses the influence of chemical composition on the final electromagnetic properties in higher permeability material. Furthermore, the effect of the hot rolling practice and the end of austenite transformation temperature range on the hot band microstructure is described. The magnetic polarization J₅₀₀₀ better than 1.7 T, using hot rolling conditions 40 mm transfer bar thickness, finish mill entry temperature 1000 °C, and finishing temperature 800–840 °C and after decarburization heat treatment and grain growth treatment, was obtained.