HL—1装置中心热区电子热传导初步分析

在电流及温度分布满足“不变性”原理的基础上,本文分析了等离子体中心热区的能量平衡,求出了电子热传导系数,根据实验数据拟合出HL-1装置电子热传导系数的定标关系为X_e=6.8(n_(eq1))~(-1.2)。此关系与其他托卡马克装置的结果类似。     

p型未掺杂富锌ZnO薄膜的形成和性能研究

以高纯ZnO为靶材,氩气为溅射气体,利用射频磁控溅射技术在石英衬底上生长出纤锌矿结构的富锌ZnO薄膜.薄膜沿(002)择优取向生长,厚约为1.2μm,呈现电绝缘特性.将溅射的ZnO薄膜在10-3Pa,510~1 000 K的温度范围等温退火1 h,室温Hall测量结果表明ZnO薄膜的导电性能经历了由绝缘—n型—p型—n型半导体的变化.XPS测试表明ZnO薄膜的Zn/O离子比随退火温度的升高而降低,但一直是富锌ZnO,说明未掺杂的富锌ZnO也可以形成p型导电.p型未掺杂富锌ZnO薄膜的形成可归因于VZn受主浓度可以克服VO和Zni本征施主的补偿效应.     

Short-range order and F ion diffusion inside the Pb1 − xAlxF2 + x solid solution Part II: Al NMR investigation and proposal of clustering process

A ²⁷Al nuclear magnetic resonance (NMR) investigation at room temperature of the Pb_{1 − x}Al_xF_{2 + x} (0 ≤ x ≤ 0.12) solid solution and of the ordered Pb₉Al₂F₂₄ phase is carried out. Two different types of aluminium ions are identified and their ratio is determined as a function of x. A clustering process based on the formation of column clusters, more and more extended when x increases, is proposed on the basis of results issued from the ¹⁹F (Part I) and ²⁷Al NMR investigations.     

Formation of Amorphous AgI Aggregates Dominating Fast Ion Conductivity in AgI-based Glasses

Precise calorimetry was performed for (AgI)_x(AgPO₃)_1–x and (AgI)_x(Ag₂PO_3.5)_1–x glasses with very high AgI compositions (x0.75). The glasses showed -glass transitions due to the freezing-in of the rearrangement of conductive Ag⁺ ions. Magnitude of the associated heat-capacity jump increased with increasing the AgI composition in the respective glass systems, and was larger in the former system than in the latter when compared at the same AgI composition. All the results were well explained by the amorphous AgI aggregate model for the AgI-based fast ion conducting glasses, indicating the appropriateness of the model for the structure of the glasses with high AgI compositions. The formation of the hypothetical bulk amorphous AgI was also indicated in the glasses at the highest limit of AgI composition.This revised version was published online in November 2005 with corrections to the Cover Date.     

Effect of Ba and Bi doping on the synthesis and sintering of Ge-based apatite phases

Recently, high oxide ion conduction has been observed in the apatite-type systems La_9.33+x(Si/Ge)₆O_26+x/2, with conductivities approaching and even exceeding that of yttria-stabilized zirconia. The Ge-based phases have been reported to suffer from Ge loss and undergo irreversible structural changes on sintering at the high temperatures required to obtain dense pellets. In this paper we discuss doping studies (Ba, Bi for La) aimed at stabilizing the hexagonal apatite lattice to high temperature, and/or lowering the synthesis and sintering temperatures. The results show that doping with Ba helps to stabilize the hexagonal lattice at high temperatures, although Ge loss appears to still be a problem. Conductivity data show that, as previously reported for the Si-based systems, non-stoichiometry in the form of cation vacancies and/or oxygen excess is required to achieve high oxide ion conduction in these Ge-based systems. Neutron diffraction structural data for the fully stoichiometric phase La₈Ba₂Ge₆O₂₆ shows that the channel oxygen atoms show little anisotropy in their thermal displacement parameters, consistent with the low oxide ion conductivity of this phase. Bi doping is shown to lower the synthesis and sintering temperatures, although the presence of Bi means that these samples are not stable at high temperatures under reducing conditions.Presented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, April 10–12, 2003     

Identification of micro-scale calorimetric devices

Micro-calorimetric devices using Si-based sensors are very useful for the study of gas–solid reactions, in which very low mass of reactants are necessary. But in fact the consequence of using flat detectors is an increase of the uncertainty in the measured energy. In this work a calorimetric gas sensor based on Xensor chip is analysed studying the local x–y contributions of dissipation to the sensitivity related to the value in the centre. We study also the effects of the gas-flow on the sensitivity, comparing the results obtained with two Xensor type chips. Finally we carry out a deeper analysis of the x–y effects on the calorimetric detector for dissipations in the reactant shell extremely close to the detector surface to visualize the link between the power density distribution and the output signal.     

Room-temperature synthesis and conductivity of the pyrochlore type Dy2(Ti1−yZry)2O7 (0?y?1) solid solution

Different compositions in a solid solution of general formula Dy₂(Ti_1−yZr_y)₂O₇, showing high oxygen ion conductivity, have been successfully prepared at room temperature via mechanochemical synthesis. Stoichiometric mixtures of the constituent oxides were dry milled together in a planetary ball mill by using zirconia vials and balls. Chemical changes in the powder mixtures as a function of composition and milling time were followed by X-ray diffraction and revealed that, in all cases and after milling for 19 h, the powder mixtures consisted of a single phase. Electrical properties were measured on sintered pellets as a function of frequency, temperature and zirconium content, revealing an increase in conductivity of more than one order of magnitude for y?0.4, which, as observed in the similar Y₂(Ti_1−yZr_y)₂O₇, has been related with the onset of disordering of the anion sublattice. Despite increasing structural disorder with increasing Zr content, conductivity remains almost constant for y>0.6, reaching a maximum value of ∼5×10⁻³ for Dy₂Zr₂O₇ at 900 °C.     

Ion Transfer in CdF<Subscript>2</Subscript>-based Iso- and Polyvalent Solid Solutions

The ionic conductivity of solid solution Cd_0.77Sr_0.23F₂ is 1.6 × 10⁻⁴ S/cm at 500 K. The conduction mechanism changes from a vacancy mechanism to an interstitial one at 523–553 K. In solid solutions Cd_0.9R_0.1F_2.1 (R = La-Lu, Y), the activation enthalpy of conduction decreases from 0.9 to 0.8 eV with decreasing ionic radius of R³⁺, raising the 500-K conductivity from 6 ×10⁻⁶ S/cm for La³⁺to 6 × 10⁻⁵ S/cm for Lu³⁺. For crystalline Cd_0.95In_0.05F_2.05, ionic and electronic conductivities at 313 K equal 5 × 10⁻⁴ and 5 − 10⁻⁶ S/cm.__________Translated from Elektrokhimiya, Vol. 41, No. 5, 2005, pp. 627–632.Original Russian Text Copyright © 2005 by Sorokin, Buchinskaya, Sul’yanova, Sobolev.     

A new method for predicting conduction anesthesia

A new method for predicting conduction anesthesia has been suggested. The method is based on calculation of theP matrix probabilities of interatomic contacts for each molecule of the compounds considered. TheP matrix enables one to evaluate the main tendencies of atoms and atomic groups to interact in biochemical sorption on the nerve fiber surface. The minimum effective concentrations calculated for 25 compounds are in good agreement with the experimental data. The correlation coefficient between the experimental and calculated values is 0.98 when the standard deviation is 0.1 mmol L⁻¹. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 1781–1784, October, 1997.     

Trigonal-planare CuX3-Gruppen in Cu2Mo6X14, X = Cl,Br, I

Trigonal Planar CuX₃-Groups in Cu₂Mo₆X₁₄, X = Cl, Br, I Cu₂Mo₆Cl₁₄ (I), Cu₂Mo₆Br₁₄ (II) and Cu₂Mo₆I₁₄ (III) were synthesized by thermal treatment of corresponding mixtures of copper(I) and molybdenum(II) halides. The crystal structures were determined by single crystal X-ray analyses. I and II show isotypism, cubic, Pn3 (no. 201, sec. setting), Z = 4, I: a = 12.772(3) Å, II: a = 13.350(2) Å. III shows a new structural type, orthorhombic, Pbca (No. 61), Z = 4, a = 16.058(3) Å, b = 10.643(2) Å, c = 16.963(3) Å. Trigonal planar CuX₃ units were found in I? III. Structural behaviour relations are discussed, especially with regard to ionic conductivity.