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91.
Based on scalar diffraction theory, 8-phase-level 256×256 elements diffractive microlens array with element dimension of 50×33 μm2 have been fabricated on the back-side of PtSi(3~5 μm) infrared CCD. The measurement results indicated that the ratio of the signal-to-noise of the infrared CCD with microlens was increased by a factor of 2.8. 相似文献
92.
采用5d-4f跃迁的稀土Ce3+-冠醚配合物(Ce-二环己基并-18-冠-6,Ce-DC18C6)作为发光掺杂剂,4,4'-二(9-咔唑基)联苯(CBP)为基质,设计制备了紫外发光器件:ITO/CuPc/Ce-DC18C6:CBP/Bu-PBD/LiF/Al,首次观测到峰位于376nm的Ce3+离子的紫外电致发光。通过对比器件的EL谱与Ce3+-冠醚配合物薄膜的PL谱发现,EL光谱中有部分来自Ce3+配合物中的Ce3+离子的。这种5d-4f电子跃迁的掺杂质量分数为3%时,该UV-发光器件的最大辐射功率为13μW/cm2。 相似文献
93.
Cluster ions have been recognized as a superb primary species in time of flight secondary ion mass spectroscopy (ToF-SIMS) compared with monatomic primary ions, as they significantly enhance the secondary ion yields from bulk samples. Self-assembled monolayers provide an important system for studying the fundamental mechanism involved in the yield enhancement.We used a gold cluster ion source to analyze a new type of self-assembled monolayer: a fluorocarbon-grafted polyethylene terephthalate. In addition to the structure details, which helped to understand the grafting mechanism, ToF-SIMS analysis revealed that fluorocarbon secondary ion yield enhancements by cluster ions were due to the enhanced sputter efficiency. A larger information depth may also be expected from the enhancement. Both mathematical definitions of damage cross-section and disappearance cross-section were revisited under a new context. Another cross-section parameter, sputter cross-section, was introduced to differentiate the beam induced sputter process from damage process. 相似文献
94.
利用离子速度影象技术研究了正一溴丁烷(n-C4H9Br)在231~267 nm波段的光解,得出了如下结论:正一溴丁烷(n-C4H9Br)在231~267 nm波段的吸收源于基态到三个最低激发态的跃迁,这三个激发态标识为1A″、2A′和3A′;发生在这三个排斥态的势能面(PES)上的光解最终导致C4H9 Br(2P3/2)或C4H9 Br*(2P1/2)的产生;2A′和3A′态之间存在避免交叉(Avoided crossing)会影响最终的光解产物;从基态1A′到激发态1A″的跃迁矩垂直于对称面,也就垂直于C-Br键;从基态1A′到激发态3A′的跃迁矩平行于对称面,同时平行于C-Br键;从基态1A′到激发态2A′的跃迁矩在对称面内,且与C-Br键成53.1°夹角.我们也讨论了正一溴丁烷(n-C4H9Br)在234 nm和267 nm附近光解时的避免交叉几率(Avoided crossingprobability),以及它对单通道相对产额(Relative fraction of the individual pathways)的影响. 相似文献
95.
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97.
M. Esmaeelpour 《Applied Surface Science》2006,252(18):6353-6359
This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 1017, 3 × 1017, 6 × 1017 and 10 × 1017 N+ cm−2 with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10−2 Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr2N phase near the surface as a result of higher N+ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr2N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr2N phase and nitrogen atoms diffusion history during the thermal treatment process. 相似文献
98.
计算机模拟仿真射频磁控溅射实验制备薄膜及离于电池电极,研究了在特定实验条件下薄膜的生长过程,并分析了影响薄膜生长的部分因素。 相似文献
99.
通过采用相位重匹配技术,设计了一种输入输出共轴的三弯曲型TM01-TE11模式转换器,该转换器由三段常曲率弯曲波导和两段直波导组成。用模式耦合理论建立了该类模式转换器的数值计算和优化设计方法,并设计了一个中心频率为7.0 GHz的模式转换器。该转换器的TM01-TE11转换效率在中心频率上大于99%,在6.5~7.5 GHz的频率范围内大于90%。应用时域有限差分法和有限元方法对所设计的模式转换器进行了仿真,仿真结果验证了设计理论和设计结果。 相似文献
100.
The bunching system of the ATLAS positive ion injector (PII) has been improved by relocating the harmonic buncher to a point
significantly closer to the second stage sine-wave buncher and the injector LINAC. The longitudinal optics design has also
been modified and now employs a virtual waist from the harmonic buncher feeding the second stage sine-wave buncher. This geometry
improves the handling of space charge for high-current beams, significantly increases the capture fraction into the primary
rf bucket and reduces the capture fraction of the unwanted parasitic rf bucket. Total capture and transport through the PII
has been demonstrated as high as 80% of the injected dc beam while the population of the parasitic, unwanted rf bucket is
typically less than 3% of the total transported beam. To remove this small residual parasitic component a new traveling-wave
transmission-line chopper has been developed reducing both transverse and longitudinal emittance growth from the chopping
process. This work was supported by the U.S. Department of Energy under contract W-31-109-ENG-38. 相似文献