Amine‐blocked polyisocyanates. I. Synthesis of novel N‐methylaniline‐blocked polyisocyanates and deblocking studies using hot‐stage fourier transform infrared spectroscopy

A series of substituted N‐methylaniline‐blocked polyisocyanates based on 4,4′‐methylenebis(phenyl isocyanate) and poly(tetrahydrofuran) were prepared and characterized thoroughly with FTIR, ¹H NMR, and ¹³C NMR spectroscopy methods. Compared with unsubstituted N‐methylaniline, a blocking agent with an electron‐releasing substituent at the para position took a shorter time, whereas those with an electron‐releasing substituent at the ortho position or an electron‐withdrawing substituent at the ortho and para positions took longer times for the blocking reaction. The thermal dissociation reactions of blocked polyisocyanates were carried out with an FTIR spectrophotometer attached to hot‐stage accessories under dynamic and isothermal conditions. The dynamic method was used to determine the deblocking temperature, and the isothermal method was used to calculate the deblocking kinetics and activation parameters. The cure times of blocked polyisocyanates with hydroxyl‐terminated polybutadiene were also determined. The deblocking temperatures, the results of cure‐time studies, and the kinetic parameters revealed that the thermal dissociation of the N‐methylaniline‐blocked polyisocyanates was retarded by electron‐donating substituents and facilitated by electron‐withdrawing substituents. The action of N‐methylanilines as blocking agents for isocyanate was explained by the formation of a four‐center, intramolecularly hydrogen‐bonded ring structure during the thermal dissociation of the blocked polyisocyanates. The formation of such a hydrogen‐bonded ring structure was confirmed and supported by variable‐temperature ¹H NMR studies and entropy parameters, respectively. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1557–1570, 2007     

Ag-Bi高温超导线材转变温度的测量

介绍了 Bi系银包套高温超导线材的电阻温度特性 ,用测电阻和电磁感应两种方法分别测量了材料的超导转变温度 ,电磁感应法测量曲线上台阶的出现表明材料中 Bi(2 2 2 3)和 Bi(2 2 12 )两相的存在。     

25MeV/u6He+9Be反应的轻粒子发射

在25MeV/u ⁶He与⁹Be靶的反应中,107°和128°处明显地观察到了轻粒子发射.粒子能谱形状与平衡热源蒸发相一致,分析得到热源的核温度为完全熔合条件下的5.6MeV或非完全熔合条件下的5.2MeV .实验发现发射氚的数量特别大,这可能与目前广泛研究的⁶He的集团结构和同位旋效应有关.     

不同温度均匀二半空间接触后产生的辐射场

 应用电磁线路中涨落耗散理论，推导了不同温度均匀二半空间接触后产生辐射场密度的公式。将此公式近似展开后，即得Grover和Urtiew所获得的表示式，不过多了一松弛项，该项如用非富里叶热传导理论推导，也是存在的。该结果和实验结果一致，不过这里的松驰时间可以应用介质性质进行计算。     

腔靶等离子体辐射温度空间分布测量

本文描述了用膜吸收法测量激光等离子体辐射温度空间分布的原理和方法给出了柱形缝靶轴向辐射温度随空间位置变化的特征,对测量结果进行了分析讨论。     

Design of high-capacity,reversible polymeric adsorbents for acidic gases

Polyethyleneimine (PEIM) samples crosslinked by a commercial epoxy resin (Epon 828) were prepared, and their adsorption capacity for acidic gases was studied. The swelling and deswelling characteristics of the crosslinked samples were also examined as part of this program. Reactivation of these adsorbents could be carried out by heat, or by a combination of heat and treatment in dilute alkalies.     

Cr^4＋：YAG,Cr^4＋：Mg2SiO4近红外荧光辐射温度特性研究

测量了Ｃｒ＾４＋，ＹＡＧ、Ｃｒ＾４＋，Ｍｇ２ＳｉＯ４晶体在室温和液氮温度下的荧光光谱，吸收光谱和激发态寿命，讨论了温度变化时，两种晶体中Ｃｒ＾４＋近红外辐射积分强度变化与激光发态寿命变化的关系，得出结论：在７７Ｋ￣３００Ｋ范围内，Ｃｒ＾４＋的＾３Ｔ２能级荧光辐射截面本身受温度影响不大，Ｃｒ＾４＋辐射荧光的变化，主要是由无辐射弛豫速率随温度变化而引起的。     

ESR方法研究高TC氧化物的超导电性

用电子顺磁共振方法研究了一些高温超导氧化物样品的零场非共振吸收信号和正常的ＥＳＲ共振信号。认为这种方法可以作为鉴别样品进入超导态的实验判据之一。利用零场非共振吸收实验给出的下临界磁场Ｈｃ１（Ｔ）很好地遵多Ｈｃ１（Ｔ）＝Ｈｃ１（０）（１－Ｔ＆＾２／Ｔｃ＾２）。     

Study of hot bands in the B2Σ+u-X2Σ+g system of C-2 anion

Optical heterodyne magnetic rotation enhanced velocity modulation spectroscopy was employed to observe the visible absorption spectra of the B^2Σ^+_u-X^2Σ^+_g electronic transition of C^-_2. Four hot bands (0,1), (1,2), (2,3) and (3,4) have been observed and the band (3,4) is measured directly for the first time, so far as we know, by absorption. A rotational analysis was carried out to obtain molecular constants. With the Franck－Condon principle and the vibrational Boltzmann distribution, we have estimated the vibrational temperature of C^-_2 to be about 3000K.     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.