Growth of vertically aligned single crystal ZnO nanotubes by plasma-molecular beam epitaxy

Highly oriented and vertically aligned single crystalline ZnO nanotubes were fabricated on Al₂O₃ (0001) substrates by plasma-molecular beam epitaxy without employing any external metal catalysts or templates. Field emission scanning electron microscope images indicate that the regularly aligned ZnO nanotubes with uniform size distribution were obtained. The chimney-like single crystal ZnO nanotube was confirmed by the transmission electron microscope and selected area electron diffraction pattern of the single nanotube. The formation mechanism of the nanotubes was also described briefly.     

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230  ^°C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers.     

Effects of In and Sb mono-layers to form rotated InSb films on a Si(1 1 1) substrate

A new method for InSb heteroepitaxial growth on a Si substrate was introduced in our previous work, in which an InSb film was formed via an InSb bi-layer. In the present work, to study the effects of In and Sb individual layers on the InSb film quality, InSb was deposited onto an InSb bi-layer, In mono-layer, and Sb mono-layer on a Si substrate. It was found that both In and Sb layers (in other words, InSb bi-layer) were essential to form a fine InSb film.     

Praseodymium silicide formation at the Pr2O3/Si interface

The interface and layer structure of praseodymium (Pr) oxide layers grown on Si(0 0 1) from a high-temperature effusion cell are studied using grazing incidence X-ray diffraction. Due to the interdiffusion of praseodymium and silicon atoms, Pr silicide forms in the layers. We find that Pr silicide is the favorable structure under oxygen deficient growth conditions in the Pr oxide layer. To avoid the silicidation, additional oxygen must be supplied. The formation of Pr silicide is suppressed for layers grown with an oxygen partial pressure of 10⁻⁷ mbar at a substrate temperature of 700 °C.     

Structural properties of GaAs nanostructures formed by a supply of intense As4 flux in droplet epitaxy

We investigated detailed structural properties of GaAs nanostructures formed by a supply of intense As₄ flux to Ga droplets. Scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) revealed that whisker-like nanostructures had formed on the truncated cone-shaped bases after crystallization. Moreover, electron energy loss spectroscopy in scanning transmission electron microscopy (STEM-EELS) revealed that elemental Ga atoms remained inside the nanostructures while outside, some had crystallized into GaAs. These findings suggest that crystallization started at the edges of the droplets and the GaAs grew upward along the periphery of the droplets until the droplets were completely covered with crystallized GaAs.     

Temperature-dependent carbon incorporation into the Si1−yCy film during gas-source molecular beam epitaxy using monomethylsilane

Coverage and adsorption state of hydrogen atoms on the growing surface of Si_1−yC_y film using monomethylsilane has been investigated by using temperature-programmed desorption (TPD) and multiple-internal-reflection Fourier-transform infrared spectroscopy (MIR-FT-IR). The surface hydrogen coverage decreases with the growth temperature T_g until it disappears at 800 °C. All the H₂-TPD spectra are well resolved into six SiH-related and one CH_n-related hydrogen desorption peaks. The SiH-related FT-IR peak showed a blue shift with increasing T_g, which, in conjunction with the TPD, is related to enhanced C incorporation at backbonds of SiH.     

Island dissolution during capping layer growth interruption

A possible scenario for the dissolution of partially capped quantum dots was investigated. This model is based on the consideration of the total free energy being a sum of elastic and surface energies as the quantum-dot material redistributes itself as a second wetting layer on top of the capping layer. Quantitative results were obtained for the case of InAs/GaAs quantum dots that are partially capped by GaAs. We compare our results with supporting experimental evidence. Received: 29 January 2001 / Accepted: 30 January 2001 / Published online: 3 April 2001