Magnetic properties of (Co Pd ) superstructures on Pd(100) and Pd(111)

The magnetic properties of (Co_nPd_m)_r superstructures on Pd(100) and Pd(111) are evaluated using the fully-relativistic spin-polarized screened Korringa-Kohn-Rostoker method. It is found that only in the case of a Pd(111) substrate such superstructures exhibit perpendicular magnetism, while on a Pd(100) substrate the magnetization is oriented in-plane. Also investigated is the effect of interdiffusion in repeated superstructures. By using the inhomogeneous coherent potential approximation (CPA) for layered systems the effect of ordering into (repeated) superstructures can be described in an ab-initio-like manner. It is found that already small amounts of interdiffusion can be decisive for the actual value of the magnetic anisotropy energy. Received 3 November 1999 and Received in final form 18 January 2000     

Recent developments in CVD growth and applications of 2D transition metal dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest, and show great potential in electronic, optoelectronic, spintronic and valleytronic fields. Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures. Due to the low cost, high yield and industrial compatibility, chemical vapor deposition (CVD) is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures. Here, state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed, including wafer-scale synthesis, phase transition, doping, alloy and stacking engineering. Meanwhile, recent progress on the application of multi-functional devices is highlighted based on 2D TMDs. Finally, challenges and prospects are proposed for the practical device applications of 2D TMDs.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Voltage control of millimeter-wave ferromagnetic resonance in multiferroic heterostructures thin films

Multiferroic heterostructures thin films, SrBi₂Ta₂O₉/BaFe₁₂O₁₉ (SBT/BaM), were grown on Pt/TiO₂/SiO₂/Si substrates by using magnetron sputtering and Sol-gel ways. X-ray diffractometer (XRD) analysis showed that only SBT and BaM phases appeared in the multiferroic heterostructures. Magnetic hysteresis loops revealed that the saturated magnetization was 3.7 kG and the M-H characteristics of SBT/BaM were not influenced by the presence of the SBT layer. Ferromagnetic resonance (FMR) measurement showed the lowest FMR linewidth of 205 Oe at 50 GHz. Additionally, when direct-current electric field was applied to SBT layer, as a result of which mechanical deformation of the ferromagnetic layer occurred that leads to a frequency shift in ferromagnetic resonance and the magnetoelectric coupling effect (α) is 1.8 MHz*cm/kV. Our findings indicate that these SBT/BaM thin films have a significant potential for the usage in millimeter wave tunable devices.     

Advances in Hybrid Composites for Photocatalytic Applications: A Review

Heterogeneous photocatalysts have garnered extensive attention as a sustainable way for environmental remediation and energy storage process. Water splitting, solar energy conversion, and pollutant degradation are examples of nowadays applications where semiconductor-based photocatalysts represent a potentially disruptive technology. The exploitation of solar radiation for photocatalysis could generate a strong impact by decreasing the energy demand and simultaneously mitigating the impact of anthropogenic pollutants. However, most of the actual photocatalysts work only on energy radiation in the Near-UV region (<400 nm), and the studies and development of new photocatalysts with high efficiency in the visible range of the spectrum are required. In this regard, hybrid organic/inorganic photocatalysts have emerged as highly potential materials to drastically improve visible photocatalytic efficiency. In this review, we will analyze the state-of-art and the developments of hybrid photocatalysts for energy storage and energy conversion process as well as their application in pollutant degradation and water treatments.     

Ultrathin,Porous and Oxygen Vacancies‐Enriched Ag/WO3−x Heterostructures for Electrocatalytic Hydrogen Evolution

Exploring advanced electrocatalysts for electrocatalytic hydrogen evolution is highly desired but remains a challenge due to the lack of an efficient preparation method and reasonable structural design. Herein, we deliberately designed novel Ag/WO_3?x heterostructures through a supercritical CO₂‐assisted exfoliation‐oxidation route and the subsequent loading of Ag nanoparticles. The ultrathin and oxygen vacancies‐enriched WO_3?x nanosheets are ideal substrates for loading Ag nanoparticles, which can largely increase the active site density and improve electron transport. Besides, the resultant WO_3?x nanosheets with porous structure can form during the electrochemical cycling process induced by an electric field. As a result, the exquisite Ag/WO_3?x heterostructures show an enhanced hydrogen evolution reaction (HER) activity with a low onset overpotential of ≈30 mV, a small Tafel slope of ≈40 mV dec^?1 at 10 mA cm^?2, and as well as long‐term durability. This work sheds light on material design and preparation, and even opens up an avenue for the development of high‐efficiency electrocatalysts.     

手性钙钛矿的结构维度与光电特性

近十年,有机无机杂化钙钛矿凭借其新颖优异的光电特性而引起广泛关注。最近,手性钙钛矿由于结合了钙钛矿材料和手性材料各自独特性能,在三维显示、光学信息处理、量子光学、生物探测、自旋电子等方面具有重要应用价值。根据有机、无机组分的空间分布,可以对手性钙钛矿的结构维度进行分类。本文以手性钙钛矿的不同结构维度为出发点,分别阐述了一维、二维和三维手性钙钛矿的晶体结构、光学和光电特性,包括圆二色性、圆偏振光致发光和光电探测等特性。考虑到二维手性钙钛矿具有独特的范德华层状晶体结构,重点介绍了其与其它二维材料组合成二维异质结构方面的工作。最后,分别从材料制备和器件应用的角度,总结了手性钙钛矿的重点挑战问题和未来发展方向。     

Heterointerface Engineering of ZnO/CdS Heterostructures through ZnS Layers for Photocatalytic Water Splitting

Solar-driven water splitting to produce clean and renewable hydrogen offers a green strategy to address the energy crisis and environmental pollution. Heterostructure catalysts are receiving increasing attention for photocatalytic hydrogen generation. ZnO/ZnS/CdS and ZnO/CdS heterostructures have been successfully designed and prepared according to two different strategies. By introducing a heterointerface layer of ZnS between ZnO and CdS, a Z scheme charge-transfer channel was promoted and achieved superior photocatalytic performance. A highest hydrogen generation rate of 156.7 μmol g⁻¹ h⁻¹ was achieved by precise control of the thickness of the heterointerface layer and of the CdS shell. These findings demonstrated that heterostructures are promising catalysts for solar-driven water splitting, and that heterointerface engineering is an effective way to improve the photocatalytic properties of heterostructures.     

PtM/MxBy (M=Ni,Co, Fe) Heterostructured Nanobundles as Advanced Electrocatalyst for Hydrogen Evolution Reaction

Optimizing the electronic and synergistic effect of hybrid electrocatalysts based on Pt and Pt-based nanocatalysts is of tremendous importance towards a superior hydrogen evolution performance under both acidic and alkaline conditions. However, developing an ideal Pt-based hydrogen evolution reaction (HER) electrocatalyst with moderated electronic structure as well as strong synergistic effect is still a challenge. Herein, we fabricated boron (B)-doped PtNi nanobundles by a two-step method using NaBH₄ as the boron source to obtain PtNi/Ni₄B₃ heterostructures with well-defined nanointerfaces between PtNi and Ni₄B₃, achieving an enhanced catalytic HER performance. Especially, the PtNi/Ni₄B₃ nanobundles (PtNi/Ni₄B₃ NBs) can deliver a current density of 10 mA cm⁻² at the overpotential of 14.6 and 26.5 mV under alkaline and acidic media, respectively, as well as outstanding electrochemical stability over 40 h at the current density of 10 mA cm⁻². Remarkably, this approach is also universal for the syntheses of PtCo/Co₃B and PtFe/Fe₄₉B with outstanding electrocatalytic HER performance.