高场下界面势垒对双层有机器件复合发光的影响

以高场作用下载流子对三角势垒的Fowler-Nordheim隧穿理论为基础,建立了双层有机电致发光器件中载流子的输运和复合发光模型.计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响.该理论模型很好地解释了实验现象,并进一步证实了电场对复合区域的调制作用. 关键词： 有机电致发光 双层器件 界面势垒     

Replica Symmetry Breaking in Short-Range Spin Glasses: Theoretical Foundations and Numerical Evidences

We discuss replica symmetry breaking (RSB) in spin glasses. We update work in this area, from both the analytical and numerical points of view. We give particular attention to the difficulties stressed by Newman and Stein concerning the problem of constructing pure states in spin glass systems. We mainly discuss what happens in finite-dimensional, realistic spin glasses. Together with a detailed review of some of the most important features, facts, data, and phenomena, we present some new theoretical ideas and numerical results. We discuss among others the basic idea of the RSB theory, correlation functions, interfaces, overlaps, pure states, random field, and the dynamical approach. We present new numerical results for the behaviors of coupled replicas and about the numerical verification of sum rules, and we review some of the available numerical results that we consider of larger importance (for example, the determination of the phase transition point, the correlation functions, the window overlaps, and the dynamical behavior of the system).     

基于1/f噪声的NPN晶体管辐照感生电荷的定量分离

本文针对NPN双极性晶体管, 在研究辐照感生的氧化层电荷及界面态对晶体管基极电流和1/f噪声的影响的基础上, 建立辐照感生氧化层电荷及界面态与基极电流和1/f噪声的定量物理模型. 根据所建立的模型, 提出一种新的分离方法, 利用1/f噪声和表面电流求出氧化层电荷密度, 利用所求得氧化层电荷密度和表面电流求出界面态密度. 利用本方法初步实现了辐照感生氧化层电荷及界面态的定量计算.     

AlN插入层对AlxGa1-xN/GaN界面电子散射的影响

本文研究AlN作为Al_xGa_1-xN/GaN插入层引起的电子输运性质的变化, 考虑了Al_xGa_1-xN和AlN势垒层的自发极化、压电极化对Al_xGa_1-xN/AlN/GaN双异质结高电子迁移率晶体管(HEMT)中极化电荷面密度、二维电子气(2DEG) 浓度的影响, 分析了AlN厚度与界面粗糙度散射和合金无序散射的关系; 结果表明, 2DEG 浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度, 插入一层1–3 nm薄的AlN层, 可以明显提高电子迁移率.     

基于嵌入式的工业控制人机界面系统研究

针对工业控制系统网络化和良好人机交互性的需求,构建和开发了基于ARM9微处理器的通用工业控制人机界面系统。硬件部分主要讨论了以S3C2440微处理器为核心的硬件电路设计,外围电路模块包括SDRAM及Flash存储器电路、以太网电路、RS-232/RS-422电路、触摸屏及LCD接口等电路,在分析了硬件系统信号完整性的前提下,完成了6层PCB的设计工作。软件部分主要研究了U-Boot移植和内核裁剪技术,编写了相关的硬件设备驱动程序,设计了基于QT/Embedded的人机界面和相关应用程序。论文研究最终实现了工业控制系统的人机交互和控制需求。     

Transfer of smectic films to a solid substrate by the method of Maclennan

We investigate monolayers of 2-alcohols (2-C9 to 2-C16) obtained by placing a drop of pure alcohol at the water surface. These alcohols are chiral molecules and we study the racemic mixtures. By ellipsometry and surface tension measurements we are able to characterize the 2D crystallization-melting transition with temperature. We find a first order transition. Using X-ray under grazing incidence we show that the racemic mixture crystallizes at 2D on a hexagonal cell. We find a parity effect on the lateral pressure at the transition and on the stability of the Bragg peak. We compare all results with those observed for 1-alcohols. Received: 11 April 1997 / Revised: 18 August 1997 / Accepted: 9 October 1997     

The lamellar-disorder interface: one-dimensional modulated profiles

We study interfacial behavior of a lamellar (stripe) phase coexisting with a disordered phase. Systematic analytical expansions are obtained for the interfacial profile in the vicinity of a tricritical point. They are characterized by a wide interfacial region involving a large number of lamellae. Our analytical results apply to systems with one dimensional symmetry in true thermodynamical equilibrium and are of relevance to metastable interfaces between lamellar and disordered phases in two and three dimensions. In addition, good agreement is found with numerical minimization schemes of the full free energy functional having the same one dimensional symmetry. The interfacial energy for the lamellar to disordered transition is obtained in accord with mean field scaling laws of tricritical points. Received: 28 March 1997 / Revised: 6 February 1998 / Accepted: 16 February 1998     

AuBe/p-GaP接触体系界面特性随温度变化的研究

微合金条件对M-S接触的表面与界面特性产生重要的影响.借助光电子能谱分析了AuBe/p-GaP接触体系界面组分变化,用扫描电子显微镜观察其表面形貌；从冶金学观点解析了M-S接触界面反应的特征,并对其温度依赖关系进行了讨论.     

Coherent resonant transport through a mesoscopic system with quantum ac microwave field

The time-dependent transport through an ultrasmall quantum dot coupling to two electron reservoirs is investigated. The quantum dot is perturbed by a quantum microwave field (QMF) through gate. The tunneling current formulae are obtained by taking expectation values over coherent state (CS), and SU(1,1) CS. We derive the transport formulae at low temperature by employing the nonequilibrium Green function technique. The currents exhibit coherent behaviors which are strongly associated with the applied QMF. The time-dependent currents appear compound effects of resonant tunneling and time-oscillating evolution. The time-averaged current and differential conductance are calculated, which manifest photon-assisted behaviors. Numerical calculations reveal the similar properties as those in classical microwave field (CMF) perturbed system for the situations concerning CS and squeezed vacuum SU(1,1) CS. But for other squeezed SU(1,1) CS, the tunneling behavior is quite different from the system perturbed by a single CMF through gate. Due to the quantum signal perturbation, the measurable quantities fluctuate fiercely. Received 28 May 1998     

超薄超晶格(GaAs)_4/(AlAs)_2的一级拉曼光谱及其选择定则

在超晶格样品（ＧａＡｓ）４／（ＡｌＡｓ）２的一级共振拉曼光谱的界面模的观察中,四个界面模在ＸＸ和ＸＹ两种偏振态中均能被观察到,这与传统的选择定则相矛盾。这是因为传统的理论假设电子波函数是完全限制在势阱当中,而在超薄系统中例如在ＧａＡｓ势阱中的电子波函数会穿透到ＡｌＡｓ势垒中,从而得到新的结果。这表明传统的理论在被应用到超薄系统或超小系统时需要进行一定的修正。