On the growth strain origin and stress evolution prediction during oxidation of metals

High temperature oxidation of metals leads to residual stresses in the metal and in the oxide. In this work, we try to predict the evolution of the residual stresses in the growing oxides layers, during isothermal oxidation. The origin of these stresses is based on the microstructural model of Clarke, however, another justification is proposed, assuming a proportional dependence of the growth strain with the oxide layer thickness. Using the mechanics of thin layers, as well as the analysis proposed to describe the growth strain, a system of equations are deduced that predict the stresses evolution with oxidation time. Numerical analysis is performed, leading to a set of theoretical curves.     

Mathematical modeling of crystallization analysis fractionation (Crystaf) of polyethylene

Four polyethylene samples (PE) with different molecular weight distributions (MWD) were analyzed by crystallization analysis fractionation (Crystaf) at several cooling rates to investigate the effect of MWD and cooling rate on their Crystaf profiles. Using these results, we developed a mathematical model for Crystaf that considers crystallization kinetic effects, which are ignored in all previous Crystaf models. The Crystaf model we proposed can fit the experimental Crystaf profiles of the 4 polyethylene resins very well. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2749–2759, 2006     

Structural, morphological, wettability and thermal resistance properties of hydro-oleophobic thin films prepared by a wet chemical process

The structural properties of fluorine containing polymer compounds make them highly attractive materials for hydro-oleophobic applications. However, most of these exhibit low surface energy and poor adhesion on the substrates. In the present investigation, crack free, smooth and uniform thin films of poly[4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole]-co-tetrafluoroethylene (TFD-co-TFE) with good adhesion have been deposited by wet chemical spin-coating technique on polished AISI 440C steel substrates. The as-deposited films (xerogel films) have been subjected to annealing for 1 h at different temperatures ranging from 100 to 500 °C in an argon atmosphere. The size growth of the nano-hemispheres increased from 8 nm for xerogel film to 28 nm for film annealed at 400 °C. It was found that as the annealing temperature increased from 100 to 400 °C, nano-hemisphere-like structures were formed, which in turn have shown increase in the water contact angle from 122° to 147° and oil (peanut) contact angle from 85° to 96°. No change in the water contact angle (122°) has been observed when the films deposited at room temperature were heated in air from 30 to 80 °C as well as exposed to steam for 8 days for 8 h/day indicating thermal stability of the film.     

Computation of moisture and temperature profiles in soil—The coupled model

The coupled model has been developed in this study for moisture transport and beat exchange in soil. The model is driven by atmospheric conditions measured in a field. The concept that soil has a surface resistance to evaporation is introduced in order to relate the evaporation from surface with the vapour flux in air. With the use of this concept, the simulation results agree quite well with the measured data.     

应力对La0.83Sr0.17MnO3薄膜输运性能的影响

采用溶胶-凝胶方法在Si(111)上制备了LSMO(x=0.17)薄膜.研究了块体材料和不同厚度薄膜R -T曲线、红外光谱和X射线衍射.结果表明，LSMO薄膜属于正交晶体结构，薄膜取向与膜厚度 有关，当膜厚度为450nm或680nm时，主要取向〈200〉，而膜厚度为900nm时取向为〈020〉 ：根据离子对相互作用能和谐振子模型，得到了红外吸收与Mn—O—Mn键长和键角关系式，6 00cm^-1附近红外吸收与晶格常数b的变化有关；块体与薄膜的金属—绝缘体转变 温度(T_MI)存在较大差别，薄膜转变温度显著低于块体，并与厚度有一定关系. 认为是LSMO薄膜中的应力诱导了晶格常数变化，引起键角改变及JT效应是转变温度变化的主 要原因. 关键词： 单晶硅 晶格常数 金属—绝缘体转变温度 应力诱导     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

Observation of inter-grain Josephson effects in Y-Ba-Cu-O samples

Josephson effects have been observed in bulk samples of Y-Ba-Cu-O. The magnitude of the zero-voltage current is found to change systematically with externally applied small magnetic fields of a few mG. It is also found to vary when samples are irradiated with microwaves. These observations suggest the presence of inter-grain Josephson junctions.     

电阻温度系数的微机测定系统

本文介绍一种电阻温度系数微机测定实验的系统。     

Topological order in the phase diagram for high-temperature superconductors with point defects

Applying a Lindemann like criterion obtained previously by Kierfeld et al. [J. Kierfeld, T. Nattermann, T. Hwa, Phys. Rev. B 55 (1997) 626], we estimate the magnetic field and temperature for a high-T_c superconductor, at which a topologically ordered vortex glass phase becomes unstable with respect to a disorder-induced formation of dislocations. The employed criterion is shown to be equivalent to a conventional phenomenological Lindemann criterion including the values for the numerical factors, i.e., for the Lindemann number. The positional correlation length of the topologically ordered vortex glass is calculated.     

The stress driven instability in elastic crystals: Mathematical models and physical manifestations

Summary Equilibrium equations and stability conditions for the simple deformable elastic body are derived by means of considering a minimum of the static energy principle. The energy is supposed to be sum of the volume (elastic) and the surface terms. The ability to change relative positions of different material particles is taken into account, and appropriate natural definitions of the first and second variations of the energy are introduced and calculated explicitly. Considering the case of negligible magnitude of the surface tension, we establish that an equilibrium state of a nonhydrostatically stressed simple elastic body (of any physically reasonable elastic energy potential and of any symmetry) possessing any small smooth part of free surface is always unstable with respect to relative transfer of the material particles along the surface. Surface tension suppresses the mentioned instability with respect to sufficiently short disturbances of the boundary surface and thus can probably provide local smoothness of the equilibrium shape of the crystal. We derive explicit formulas for critical wavelength for the simplest models of the internal and surface energies and for the simplest equilibrium configurations. We also formulate the simplest problem of mathematical physics, revealing peculiarities and difficulties of the problem of equilibrium shape of elastic crystals, and discuss possible manifestations of the above-mentioned instability in the problems of crystal growth, materials science, fracture, physical chemistry, and low-temperature physics.