On the entropy method and exponential convergence to equilibrium for a recombination–drift–diffusion system with self-consistent potential

We consider a Shockley–Read–Hall recombination–drift–diffusion model coupled to Poisson’s equation and subject to boundary conditions, which imply conservation of the total charge. As main result, we derive an explicit functional inequality between relative entropy and entropy production rate, which implies exponential convergence to equilibrium with explicit constant and rate. We report that the key entropy–entropy production inequality ought rather not to be formulated on the states space of the parabolic–elliptic system, but on the reduced states space of the associated nonlocal drift–diffusion problem, where the Poisson equation is replaced by the corresponding Green function.     

Observations of nascent superfluidity in a bilayer two-dimensional electron system at

Single-layer longitudinal and Hall resistances have been measured in a bilayer two-dimensional electron system at ν_T=1 with equal but oppositely directed currents flowing in the two layers. At small effective layer separation and low temperature, the bilayer system enters an interlayer coherent state expected to exhibit superfluid properties. We detect this nascent superfluidity through the vanishing of both resistances as the temperature is reduced. This corresponds to the counterflow conductivity rising rapidly as the temperature falls, reaching by . This supports the prediction that the ground state of this system is an excitonic superfluid.     

Quantum anomalous Hall effect and related topological electronic states

Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically doped topological insulator (TI) completed a quantum Hall trio—quantum Hall effect (QHE), quantum spin Hall effect (QSHE), and quantum anomalous Hall effect (QAHE). On the theoretical front, it was understood that the intrinsic AHE is related to Berry curvature and U(1) gauge field in momentum space. This understanding established connection between the QAHE and the topological properties of electronic structures characterized by the Chern number. With the time-reversal symmetry (TRS) broken by magnetization, a QAHE system carries dissipationless charge current at edges, similar to the QHE where an external magnetic field is necessary. The QAHE and corresponding Chern insulators are also closely related to other topological electronic states, such as TIs and topological semimetals, which have been extensively studied recently and have been known to exist in various compounds. First-principles electronic structure calculations play important roles not only for the understanding of fundamental physics in this field, but also towards the prediction and realization of realistic compounds. In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants will be given with focus on the QAHE and Chern insulators. We will introduce the Wilson loop method and the band inversion mechanism for the selection and design of topological materials, and discuss the predictive power of first-principles calculations. Finally, remaining issues, challenges and possible applications for future investigations in the field will be addressed.     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

Coexisting holes and electrons in high-T C materials: implications from normal state transport

Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) dc transport data reported for eight bulk-crystal and six oriented-film specimens of YBa₂Cu₃O_7?δ, and (ii) far-infrared Hall angle data reported for YBa₂Cu₃O_7?δ and Bi₂Sr₂CaCu₂O_8+δ. The electron band exhibits extremely strong scattering; the extrapolated dc residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole–electron analysis of Hall angle data suggests that the electrons possess the greater effective mass.     

Spin Chern numbers and time-reversal-symmetry-broken quantum spin Hall effect

The quantum spin Hall （QSH） effect is considered to be unstable to perturbations violating the time-reversal （TR） symmetry. We review some recent developments in the search of the QSH effect in the absence of the TR symmetry. The possibility to realize a robust QSH effect by artificial removal of the TR symmetry of the edge states is explored. As a useful tool to characterize topological phases without the TR symmetry, the spin-Chern number theory is introduced.     

Inertial spin Hall effect in non-commutative space

In the present Letter the study of inertial spin current (that appears in an accelerated frame of reference) is extended to Non-Commutative (NC) space. In the Hamiltonian framework, the Dirac Hamiltonian in an accelerating frame is computed in the low energy regime by exploiting the Foldy–Wouthuysen scheme. The NC θ-effect appears from the replacement of normal products and commutators by Moyal ?-products and ?-commutators. In particular, the commutator between the external magnetic vector potential and the potential induced by acceleration becomes non-trivial. Expressions for θ-corrected inertial spin current and conductivity are derived explicitly. We have provided yet another way of experimentally measuring θ. The θ bound is obtained from the out of plane spin polarization, which is experimentally observable.     

Simulating the Monty Hall problem in a DNA sequencing machine

The Monty Hall problem is a decision problem with an answer that is surprisingly counter-intuitive yet provably correct. Here we simulate and prove this decision in a high-throughput DNA sequencing machine, using a simple encoding. All possible scenarios are represented by DNA oligonucleotides, and gameplay decisions are implemented by sequencing these oligonucleotides from specific positions, with a single run simulating more than 12,000,000 independent games. This work highlights high-throughput DNA sequencing as a new tool that could extend existing capabilities and enable new encoding schemes for problems in DNA computing.     

Charge stripping accumulation of light heavy ions in HIRFL-CSR main ring

The charge stripping injection method has been adopted for the accumulation of light heavy ions in HIRFL-CSR. This method has some special requirements for the accelerating particles, and at the same time the structure of the injection orbit has to be changed. In this paper, the design of the orbit has been presented, as well as the calculation of the beam line matching. According to the result of commissioning, stripping injection can accumulate the beam to a higher current.