Electrical characteristics of Mg-doped GaN activated with Ni catalysts

Electrical characteristics of Mg-doped p-GaN activated with Ni catalytic layers have been investigated by means of temperature-dependent Hall effect measurements. It has been revealed that the Ni layer on GaN enhances activation of the acceptor in the whole annealing temperature range. This enhancement is remarkable especially at temperatures below 500 °C and can be attributed to the catalytic effect for the hydrogen desorption. We have found that the donor concentrations in the samples activated with the Ni catalysts are also higher than those activated without Ni. This is probably due to the catalytic effect of Ni for the nitrogen desorption. In addition, it has been found that the ionization energies of the Mg acceptors in GaN activated with the Ni layer are decreased from 170 to 118 meV as the acceptor concentration increases.     

A Java-based control system for the Orsay tandem accelerator

A new control system was designed for the tandem MP-9 at Orsay. Because of the existing devices located on high voltage platforms and the lack of space inside the accelerator, in-house electronic cards based on micro-controllers and an optical fieldbus were developed to collect data. VME processors under VxWorks, a real time operating system, manage the fieldbus, concentrate the accelerator information and transmit it to the supervisory software through the ethernet network. This software consists of a collection of Java virtual machines (JVM) running on several Unix work-stations and PCs under Windows. Some of the Java virtual machines manage apparatus, instruments, local display and connections to an object database and VME concentrators. Other manage general synoptics. JVMs communicate between themselves with RMI protocol and JRPC with VME concentrators. So the supervisory software can be spread over several control stations throughout the network.     

Elliptic theta functions and the fractional quantum Hall effect

Algebro-geometric methods are applied to the theoretical understanding of the fractionary quantum Hall effect on a periodic lattice. The fermionic Fock space of the many-electron system is precisely identified, and as a consequence, the variational Haldane-Rezayi ground state is decomposed in terms of one-particle wave functions at the first Landau level; the filling factor is thus analytically computed. Quasi-hole and quasi-particle excitations are also analyzed. The center of mass dynamics is described in terms of a section in a very subtle stable vector bundle. The Hall conductance arises as a topological invariant; namely, the slope of the vector bundle previously mentioned.     

Hall effect on unsteady MHD Couette flow and heat transfer of a Bingham fluid with suction and injection

The unsteady magnetohydrodynamic flow of an electrically conducting viscous incompressible non-Newtonian Bingham fluid bounded by two parallel non-conducting porous plates is studied with heat transfer considering the Hall effect. An external uniform magnetic field is applied perpendicular to the plates and the fluid motion is subjected to a uniform suction and injection. The lower plate is stationary and the upper plate moves with a constant velocity and the two plates are kept at different but constant temperatures. Numerical solutions are obtained for the governing momentum and energy equations taking the Joule and viscous dissipations into consideration. The effect of the Hall term, the parameter describing the non-Newtonian behavior, and the velocity of suction and injection on both the velocity and temperature distributions are studied.     

Finite groups with a seminormal Hall subgroup

Tests for π-solvability of a finite group with seminormal Hall π-subgroup are established and the nilpotency of the third commutator subgroup of any group with seminormal noncyclic Sylow subgroups is proved.     

重复Tesla变压器型相对论电子束加速器的初步试验

研制了一台重复率 Tesla型相对论电子束加速器。空心 Tesla变压器对充油Blumlein传输线充电 ;主开关为自击穿油间隙 ;二极管为平面阴极有箔二极管。试验在重复率为 0 .2 Hz和 1 Hz下分别进行。当重复率为 0 .2 Hz时 ,加速器连续重复放电 70次以上。二极管电压幅值 3 0 0 k V,脉宽 3 0 ns,上升沿约     

HM-J16双光子电子直线加速器

简要叙述了 HM-J1 6加速器的设计思想和设计特点。设计了一台采用射频功率反馈的射线能量范围为 6～ 1 6Me V的双光子电子直线加速器。其最大辐射野为 4 0 cm× 4 0 cm,双光子剂量率均大于3 60 c Gy/ (min·m)。     

Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells

We observe a strong dependence of the amplitude and field position of longitudinal resistivity (ρ_xx) peaks in the spin-resolved integer quantum Hall regime on the spin orientation of the Landau level (LL) in which the Fermi energy resides. The amplitude of a given peak is maximal when the partially filled LL has the same spin as the lowest LL, and amplitude changes as large as an order of magnitude are observed as the sample is tilted in field. In addition, the field position of both the ρ_xx peaks and plateau–plateau transitions in the Hall resistance shift depending on the spin orientation of the LLs. The spin dependence of the resistivity points to a new explanation for resistivity spikes, associated with first-order quantum Hall ferromagnetic transitions, that occur at the edges of quantum Hall states.     

氧含量对Fe掺杂YBCO体系中载流子局域化与离子团簇效应的影响

对YBa₂Cu_3-xFe_xO_y（x=00，01，02 ）和YBa₂Cu_2.8Fe_0.2O_y（y=705—653 ）系列样品的氧含量、霍尔系数和超导电性进 行了系统的研究.结果表明，氧含量的变化对样品中载流子的输运和转移及超导电性有重要 影响；适当增加氧含量可以减缓Cu(1)位元素替代对超导转变温度T_c的抑制；在 CuO₂面上参与输运的载流子（空穴）浓度是影响样品超导电性的关键因素.从电 荷转移模型出发 ，结合掺杂离子引起的载流子局域化和离子团簇效应，对载流子浓度随掺杂量和氧含量的变 化从微观结构方面进行了讨论.元素替代量的增加或者氧含量的降低（相同替代量的情况下 ）都将导致Cu-O链区的有效氧空位增多，导致替代元素的离子团簇效应和载流子局域化效应 趋于增强，这是引起参与输运的载流子浓度下降，进而导致T_c降低的主要原因. 关键词： 氧含量 霍尔系数 载流子局域化 离子团簇效应     

Processing parameters and transport properties of vacuum evaporated CdSe thin films

Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique on glass substrate. Films evaporated at substrate temperature equal 523 K are stoichiometric and homogeneous. Effect of various growth parameters like rate of deposition and substrate temperature on the electrical properties has been studied in details. Also, the annealed at 673 K under vacuum for 1 h films have been analyzed for resistivity and Hall effect.