20 cm口径离子推力器力学特性模拟分析

为了提升20 cm离子推力器的抗冲击性能,对现有结构开展了力学分析和试验验证。对栅极组件进行结构等效处理后,采用有限元方法分析了整机的模态和冲击响应谱。分析结果显示,栅极组件结构等效前后的分析结果对比差距8.3%～11.9%;推力器的3个轴向基频分别为246,248,336 Hz,栅极组件和中间极靴是离子推力器的力学薄弱环节并对整体结构稳定性具有重要影响;在冲击载荷1600 g下,栅极组件表面应力主要集中在小孔区边缘处,且形变也主要发生在小孔区;在采取刚度为1000 kN/m的减振措施后,栅极组件的整体形变位移降低了60%～82%。试验结果显示,在10～1200 Hz的低频扫描过程中,推力器3个轴向的基频分别为256,258,348 Hz,与仿真结果基本一致,采用减振措施后的20 cm口径离子推力器通过了1600 g的冲击试验。     

脉冲激光烧蚀推进技术的航天应用进展

脉冲激光烧蚀推进技术具有比冲高和推力可精确控制的特点,既可用于发射有效载荷也可用于星载动力,甚至可用小行星表面物质作为推进剂使其偏转轨道,因此,在航天领域得到越来越多关注。围绕激光单级入轨发射、同步轨道和火星轨道运输;激光微推力器用于航天器姿轨控,以及激光与电组合推进;激光烧蚀操控cm级空间碎片的轨道,以及激光烧蚀操控较大尺寸碎片的姿态;激光烧蚀偏转小行星轨道等方面,对脉冲激光烧蚀推进技术在航天领域研究现状和进展,进行了系统全面地归纳和总结,并对激光平均功率、波长、脉宽和推进剂选材等关键问题,进行了详细分析。     

Prediction and experimental measurement of the electromagnetic thrust generated by a microwave thruster system

A microwave thruster system that can convert microwave power directly to thrust without a gas propellant is developed. In the system, a cylindrical tapered resonance cavity and a magnetron microwave source are used respectively as the thruster cavity and the energy source to generate the electromagnetic wave. The wave is radiated into and then reflected from the cavity to form a pure standing wave with non-uniform electromagnetic pressure distribution. Consequently, a net electromagnetic thrust exerted on the axis of the thruster cavity appears, which is demonstrated through theoretical calculation based on the electromagnetic theory. The net electromagnetic thrust is also experimentally measured in the range from 70 mN to 720 mN when the microwave output power is from 80 W to 2500 W.     

脉冲等离子体推力器羽流沉积薄膜的结构与光学性质研究

为了研究脉冲等离子体推力器羽流污染特性,把握脉冲等离子体推力器羽流沉积薄膜性质,利用质谱仪对推力器羽流残余气体成分进行了分析,利用红外傅里叶光谱、光电子能谱及紫外可见光分光光度计对推力器羽流区阴极侧不同方位角处沉积薄膜的结构及光学性质进行了诊断研究结果表明,推力器羽流中主要存在C,F,CF,CF2和CF3气体分子;在各方位角处脉冲等离子体推力器羽流沉积生成了低氟碳比碳氟薄膜;沉积薄膜微观结构以30°角为界在羽流不同区域中具有不同的变化趋势;羽流沉积薄膜具有对波长小于500 nm的光低透射率及增强反射率的光学特性,受薄膜性质的影响,其光学特性具有极大的角度依赖性.     

2 cm电子回旋共振离子推力器离子源中磁场对等离子体特性与壁面电流影响的数值模拟

电子回旋共振离子推力器(electron cyclotron resonance ion thruster,ECRIT)离子源内等离子体分布会影响束流引出,而磁场结构决定的ECR区与天线的相对位置共同影响了等离子体分布.在鞘层作用下,等离子体中的离子或电子被加速对壁面产生溅射,形成壁面离子或电子电流,造成壁面磨损和等离子体损失,因此研究壁面电流与等离子体特征十分重要.为此本文建立2 cm ECRIT的粒子PIC/MCC(particle-in-cell with Monte Carlo collision)仿真模型,数值模拟研究磁场结构对离子源内等离子体与壁面电流特性的影响.计算表明,当ECR区位于天线上游时,等离子体集中在天线上游和内外磁环间,栅极前离子密度最低,故离子源引出束流、磁环端面电流和天线壁面电流较低.ECR区位于天线下游时,天线和栅极上游附近的等离子体密度较高,故离子源引出束流、天线壁面电流和磁环端面电流较高.腔体壁面等离子体分布与电流受磁场影响最小.     

Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic （fcc） FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity （AHC） increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

磁重联X线附近区域的等离子体结构分布及其演化

高能电子是磁重联中产生的重要现象,卫星Wind和Cluster在磁重联的多个区域都观测到了高能电子。针对X型磁重联,结合粒子动力学方程的部分解析表达式和Hall MHD计算机数值模拟结果,研究了X线附近区域的电子和离子运动的分离特性,得到了该区域垂直重联平面的磁场分量和速度分量随时间的演化特征。研究结果表明,磁重联过程中起支配作用的电子的运动是高度结构化的,受多种因素作用,其运动速度呈现非线性变化的特点,在垂直重联平面z方向的磁场分量和速度分量都存在拐点,拐点前后磁重联的电场分量的波动特性有明显差异。     

计及Hall和离子滑移电流的旋转流体在与时间相关初值条件下的MHDCouette流动

考虑Hall和离子滑移电流的影响,在旋转系统中研究导电流体非稳定的MHD Couette流动．在小数值磁场Reynolds数假定下,推导出基本的控制方程,使用著名的Laplace变换技术,数值地求解该基本方程．分两种情况:磁场相对于流体或者移动平板固定时,得到速度和表面摩擦力统一的闭式表达式．用图形讨论了问题的不同参数,对速度和表面摩擦力的影响．所得结果显示,主流速度u和次生速度v随着Hall电流而增大．离子滑移电流的增大,也会导致主流速度u的增大,但会使次生速度v减小．还给出了旋转、Hall和离子滑移参数的综合影响,确定了次生运动对流体流动的贡献．     

Modulation of electrical and optical properties of gallium-doped ZnO films by radio frequency magnetron sputtering

Ga-doped ZnO(GZO) films are prepared on amorphous glass substrates at room temperature by radio frequency magnetron sputtering.The results reveal that the gallium doping efficiency,which will have an important influence on the electrical and optical properties of the film,can be governed greatly by the deposition pressure and film thickness.The position shifts of the ZnO(002) peaks in X-ray diffraction(XRD) measurements and the varied Hall mobility and carrier concentration confirms this result.The low Hall mobility is attributed to the grain boundary barrier scattering.The estimated height of barrier decreases with the increase of carrier concentration,and the trapping state density is nearly constant.According to defect formation energies and relevant chemical reactions,the photoluminescence(PL) peaks at 2.46 eV and 3.07 eV are attributed to oxygen vacancies and zinc vacancies,respectively.The substitution of more Ga atoms for Zn vacancies with the increase in film thickness is also confirmed by the PL spectrum.The obvious blueshift of the optical bandgap with an increase of carrier concentration is explained well by the Burstein-Moss(BM) effect.The bandgap difference between 3.18 eV and 3.37 eV,about 0.2 eV,is attributed to the metal-semiconductor transition.     

Out-of-plane shear flow effects on fast magnetic reconnection in a two-dimensional hybrid simulation model

The effects of out-of-plane shear flows on fast magnetic reconnection are numerically investigated by a twodimensional(2D)hybrid model in an initial Harris sheet equilibrium with flows.The equilibrium and driven shear flows out of the 2D reconnection plane with symmetric and antisymmetric profiles respectively are used in the simulation.It is found that the out-of-plane flows with shears in-plane can change the quadrupolar structure of the out-of-plane magnetic field and,therefore,modify the growth rate of magnetic reconnection.Furthermore,the driven flow varying along the anti-parallel magnetic field can either enhance or reduce the reconnection rate as the direction of flow changes.Secondary islands are also generated in the process with converting the initial X-point into an O-point.