Limitation of Auger electron spectroscopy in the determination of the metal-on-oxide growth mode: Pd on MgO(100)

A discussion on the use of Auger electron spectroscopy as a quantitative tool to determine the growth mode of metals on single crystal oxide surfaces is presented. In the case of Pd grown epitaxially on MgO(100), the three-dimensional character of the growth is easily seen at coverage above one monolayer. However, in the submonolayer regime, and mainly at low substrate temperatures, the AES results are ambiguous. The combination of AES with the more sensitive helium-atom diffraction method allows us to demonstrate that the growth is three-dimensional from the early stages, the particles becoming flatter when the substrate temperature decreases. We compare our results with other growth studies on different metal/oxide systems. At low temperature, the ideal growth modes are not always observed, the final morphology of the films being determined mainly by kinetic effects. Thus a pseudo-Stranski-Krastanov growth mode is often obtained with formation of 2D islands followed by 3D clustering from a critical submonolayer coverage.     

Palladium island growth on Ni(111) Stochastic classical trajectory — ghost atom calculations

We generalize previous stochastic classical trajectory-ghost atom calculations for describing palladium deposition onto the Ni(111) surface between 0.1 and 0.5 monolayers. The growth evolves through two-dimensional islands. The islands are formed following the downward funneling mechanism. Surface temperature does not affect the island growth.     

氢稀释对纳米晶硅薄膜晶化特性的影响及薄膜生长机理

以SiH4与H2作为前驱气体,采用射频等离子增强化学气相沉积技术制备了纳米晶硅薄膜.利用Raman散射和红外吸收光谱等技术,对不同氢稀释比条件下薄膜的微观结构和键合特性进行了研究.结果表明,随着氢稀释比增加,薄膜的晶化率明显提高,而氢稀释比过高时,薄膜晶化率呈现减少趋势.红外吸收光谱分析表明,纳米晶硅薄膜中氢的键合模式与薄膜的晶化特性密切相关.随着氢稀释比增加,薄膜中整体氢含量和SiH2键合密度明显减少,而在高氢稀释比条件下,氢稀释比增加导致薄膜中SiH2键合密度和整体氢含量增加.     

热交换器表面镀层对传热性能的影响

采用化学镀的方法对热交换器表面进行表面改性,使其换热表面沉积一层表面能不同的均匀镀层。传热实验表明,随着磷含量的增大,凝结传热系数增大。进一步可视化实验研究表明,镀层换热表面均表现为珠膜共存状态,增大镀层的磷含量,换热表面促进珠状凝结的效果更加明显。这归于镀层降低了传热表面的表面能值。     

A fluctuating lattice Boltzmann scheme for the one-dimensional KPZ equation

Based on the well-known mapping between the Burgers equation with noise and the Kardar–Parisi–Zhang (KPZ) equation for fluctuating interfaces, we develop a fluctuating lattice Boltzmann (LB) scheme for growth phenomena, as described by the KPZ formalism. A very simple LB-KPZ scheme is demonstrated in 1+1 spacetime dimensions, and is shown to reproduce the scaling exponents characterizing the growth of one-dimensional fluctuating interfaces.     

锗烯与异氰酸多通道反应的理论计算

采用密度泛函理论B3LYP方法研究了单重态GeH2与HNCO的反应机理。在B3LYP/6-311++G**水平上对反应物,中间体,过渡态进行了全几何参数优化,通过频率分析和IRC确定中间体和过渡态,用QCISD(T)/6-311++G**方法计算了各个驻点的单点能。计算表明单重态的锗烯与异氰酸的反应有抽提氧、插入N-H键、抽提亚氨基的共七条反应路径。采用经Winger校正的Eyring过渡态理论分别计算了1个大气压、不同温度下反应势垒较低通道的热力学及动力学性质,结果表明插入N-H键反应（GeH2+HNCO→IM7→TS6→P2）通道在温度400K~1400K内,有较高的平衡常数和反应速率常数,为主反应通道,主产物为GeH3NCO。     

NH3与MH（M=Li,Na）反应机理的密度泛函理论研究

采用密度泛函理论B3LYP方法研究了NH₃与MH（M=Li,Na）的放氢反应机理.在6-311G（2d.2p）基组水平上对反应物、中间体、过渡态及产物进行了全几何参数优化.频率分析和内禀反应坐标（IRC）计算证实了中间体和过渡态的正确性和相互连接关系.计算结果表明,NH₂与MH（M=Li,Na）的反应均为单通道的氢取代反应,反应生成LiNH₂（NaNH₂）与H₂.     

1064 nm激光对中性密度滤光片的损伤机理研究

中性密度滤光片的典型结构是在K9玻璃上镀金属膜,来实现对激光的有效吸收.由于损伤阈值较低,严重限制了其在高能激光系统中的应用.实验研究了较高激光能量密度下滤光片的损伤形貌和损伤机理.损伤形貌的变化特征是:随着激光能量密度的增加,滤光片先出现损伤点,后以损伤点为中心产生裂纹,且裂纹长度逐渐变长,最终连接成线状和块状,导致大面积的薄膜脱落.建立了缺陷吸收激光能量升温致中性密度滤光片表面薄膜损伤的模型,计算了薄膜表面的温度和应力分布,讨论了薄膜表面不均匀温升造成的径向、环向和轴向热应力分布.理论分析显示:环向应力是造成薄膜沿径向产生裂纹的主要原因.当激光能量密度大于约2.2 J/cm²,杂质粒子半径大于140 nm且相邻杂质粒子之间的距离小于10 μ m时,裂纹才能大量连接起来引起薄膜的大面积脱落.     

Sr2 CeO4电荷迁移发光的光谱结构规律研究

利用高温固相反应法分别合成了不同物相形成机理的Sr2CeO4，Sr2CeO4：Ca^2 和Sr2CeO4：Ba^2 样品，并对其光谱特性进行了研究．结果发现，对于由SrO和CeO2直接反应生成的Sr2CeO4(Ⅰ)，激发主峰位于256nm左右；而对于SrCeO4和SrO反应生成的Sr2CeO4(Ⅱ)，激发主峰位于279nm左右．在Sr2CeO4(Ⅰ)中掺入Ca^2 ，其激发光谱随着Ca^2 离子浓度的增加逐渐接近于Sr2CeO4(Ⅱ)的激发光谱．激发主峰带应属于CeO6八面体终端Ce^4 -O^2-键的电荷迁移带．对于激发光谱中340nm左右的弱激发峰，其峰值波长不受形成机理及Ca^2 掺杂的影响，只是其强度随着激发主峰的红移而增加，它可能属于CeO6八面体平面上Ce^4 -O^2-键的电荷迁移带．形成机理及Ca^2 掺杂对发射光谱没有影响．Ca^2 在Sr2CeO4(Ⅱ)与Ba^2 在Sr2CeO4(Ⅰ)和(Ⅱ)中均难于替代Sr^2 的位置．     

机械结构因素对光电跟踪伺服系统性能的影响

为克服机械结构因素对光电跟踪伺服系统性能的不良影响,分析了转动惯量、结构谐振频率、摩擦力矩等伺服机械结构因素与伺服系统性能的关系,包括分析转动惯量与伺服系统性能的关系、结构谐振频率与伺服系统性能的关系、摩擦力矩与伺服系统性能的关系,探讨了消除或减小机械谐振的措施.该分析方法可应用于设计和制造响应速度快、跟踪精度高的光电跟踪伺服系统.