Heteroepitaxial praseodymium sesquioxide films on Si(1 1 1): A new model catalyst system for praseodymium oxide based catalysts

The structure, growth and stoichiometry of heteroepitaxial Pr₂O₃ films on Si(1 1 1) were characterized by a combined RHEED, XRD, XPS and UPS study in view of future applications as a surface science model catalyst system. RHEED and XRD confirm the growth of a (0 0 0 1) oriented hexagonal Pr₂O₃ phase on Si(1 1 1), matching the surface symmetry by aligning the oxide in-plane direction along the Si azimuth. After an initial nucleation stage RHEED growth oscillation studies point to a Frank-van der Merwe growth mode up to a thickness of approximately 12 nm. XPS and UPS prove that the initial growth of the Pr₂O₃ layer on Si up to ∼1 nm thickness is characterized by an interface reaction with Si. Nevertheless stoichiometric Pr₂O₃ films of high crystalline quality form on top of these Pr-silicate containing interlayers.     

Initial oxidation of Ni(1 1 1) observed by electron emission microscopy: PEEM and MEEM

The initial oxidation of Ni(1 1 1) in the temperature range of 550-700 K has been monitored by photoelectron emission microscopy (PEEM) and metastable-atom electron emission microscopy (MEEM). The PEEM and MEEM images show uniform patterns for the chemisorbed overlayer, reflecting the electronic homogeneity as seen at the μm scale. During the nucleation and lateral growth of oxide, however, the μm-scale pattern due to the formation of oxide domains appears and its evolution depends strongly on the substrate temperature and dose pressure of gaseous O₂. Our data indicate that the high-temperature oxidation is regarded as a successive multi-nucleation process in a reaction-diffusion field.     

Kinetic stabilization of Fe film on GaAs(1 0 0): An in situ X-ray reflectivity study

We study the growth of Fe films on GaAs(1 0 0) at a low temperature, 140 K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, β_S = 0.43 ± 0.14. The observed β_S is attributed to the restricted interlayer diffusion at the low growth temperature. The change of the interface width during growth was minimal. When the Fe film was annealed to room temperature, the surface smoothed, keeping the interface width almost unchanged. The confinement of the interface derives from that the diffusion of Ga and As proceeds via the inefficient bulk diffusion, and the overlying Fe film is kinetically stabilized.     

Synthesis, growth, spectral, thermal and photoluminescence properties of a new semiorganic NLO crystal—Thiosemicarbazide lithium chloride [TSLC]

Thiosemicarbazide lithium chloride [TSLC] a new semiorganic nonlinear optical crystal has been synthesized. Single crystals by TSLC have been grown by slow evaporation solution growth technique at room temperature. Chemical composition of the synthesized material was confirmed by elemental analysis. Powder X-ray diffraction (XRD) pattern of the grown crystal has been studied. Functional groups present in the materials were identified by FT IR spectral analysis ranging between 4000 and 450 cm⁻¹. The optical transmission was studied through UV-vis spectrophotometer. Thermal analysis is carried out on the crystal and inferred to be stable at 176 °C. The second harmonic generation (SHG) of the TSLC crystal was confirmed using Nd:YAG laser and also fluorescence spectral analysis is carried out for the TSLC crystal.     

Long range one-dimensional ordering of lead phthalocyanine monolayer on InSb(1 0 0) (4 × 2)/c(8 × 2)

Sub-monolayer and monolayer of lead phthalocyanine deposited on InSb(1 0 0) (4 × 2)/c(8 × 2) surface have been investigated by scanning tunneling microscopy and low energy electron diffraction. Molecules first adsorb on the indium rows of the (4 × 2)/c(8 × 2) structure in the [1 1 0] direction and diffuse at the surface in order to form two-dimensional islands. The molecule-substrate interaction stabilizes the PbPc molecules on the In rows. It weakens the interaction between molecules located in adjacent rows resulting in numerous gliding planes between the molecular chains, in the direction parallel to the rows. At monolayer completion, a long-range one-dimensional order is adopted by the molecules in the [1 1 0] direction.     

Dynamic supercoiling bifurcations of growing elastic filaments

Certain bacteria form filamentous colonies when the cells fail to separate after dividing. In Bacillus subtilis, Bacillus thermus, and Cyanobacteria, the filaments can wrap into complex supercoiled structures as the cells grow. The structures may be solenoids or plectonemes, with or without branches in the latter case. Any microscopic theory of these morphological instabilities must address the nature of pattern selection in the presence of growth, for growth renders the problem nonautonomous and the bifurcations dynamic. To gain insight into these phenomena, we formulate a general theory for growing elastic filaments with bending and twisting resistance in a viscous medium, and study an illustrative model problem: a growing filament with preferred twist, closed into a loop. Growth depletes the twist, inducing a twist strain. The closure of the loop prevents the filament from unwinding back to the preferred twist; instead, twist relaxation is accomplished by the formation of supercoils. Growth also produces viscous stresses on the filament which even in the absence of twist produce buckling instabilities. Our linear stability analysis and numerical studies reveal two dynamic regimes. For small intrinsic twist the instability is akin to Euler buckling, leading to solenoidal structures, while for large twist it is like the classic writhing of a twisted filament, producing plectonemic windings. This model may apply to situations in which supercoils form only, or more readily, when axial rotation of filaments is blocked. Applications to specific biological systems are proposed.     

Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers

This paper reports physical properties of porous silicon and oxidized porous silicon, manufactured by anodisation from heavily p-type doped silicon wafers as a function of experimental parameters. The growth rate and refractive index of the layers were studied at different applied current densities and glycerol concentrations in electrolyte. When the current density varied from 5 to 100 mA/cm², the refractive index was between 1.2 and 2.4 which corresponded to a porosity range from 42 to 85%. After oxidation, the porosity decreased and was between 2 and 45% for a refractive index range from 1.22 to 1.46. The thermal processing also induced an increase in thickness which was dependent on the initial porosity. This increase in thickness was more important for the lowest porosities. Lastly, the roughness of the porous layer/silicon substrate interface was studied at different applied current densities and glycerol concentrations in solution. Roughness decreased when the current density or glycerol concentration increased. Moreover, roughness was also reduced by thermal oxidation.     

纳米氧化锌的过饱和控制生长与大小分布控制.

"在非水介质中合成了纳米氧化锌,测定了纳米氧化锌的紫外吸收光谱,并用有效质量模型计算了粒子大小,开发并命名了一种称之为纳米粒子过饱和控制生长的技术,该技术涉及将小的纳米粒子悬浊液加入到大的粒子悬浊液中,结果因为不同大小粒子间的溶解度差异小的粒子将全部溶解,大的粒子将整体长大,大粒子悬浊液的粒子数将保持不变,大粒子的生长速度显著比Ostwald老化的高．该技术最显著的特征是只要最初两悬浊液粒子大小的差异足够大,分布不是太宽,则粒子大小的分布将会因为粒子如此长大而变窄．"     

Temperature and substrate dependence of structure and growth mechanism of carbon nanofiber

The carbon nanofibers were grown on Ni/Si and Ni/Ti/Si substrates in 1 atm CH₄ atmosphere at 640 °C and 700 °C by thermal chemical vapor deposition method. The carbon nanofibers were characterized by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectrometry for morphology, microstructure, and crystallinity. The electron emission property of carbon nanofibers was also investigated by current-voltage (I-V) measurement. The results showed that the solid amorphous carbon nanofibers could be grown on Ni/Si substrate at 640 °C through tip growth mechanism, the carbon nanotubes could be grown on Ni/Si substrate at 700 °C through tip growth mechanism, and the carbon nanotubes could be grown on Ni/Ti/Si substrate at 700 °C through root growth mechanism.     

Stress dependence of growth mode change of epitaxial layered cobaltite γ-Na0.7CoO2

We report stress dependence of growth characteristics of epitaxial γ-Na_0.7CoO₂ films on various substrates deposited by pulsed laser deposition method. On the sapphire substrate, the γ-Na_0.7CoO₂ thin film exhibits spiral surface growth with multi-terraces and highly crystallized texture. For the γ-Na_0.7CoO₂ thin film grown on the (1 1 1) SrTiO₃ substrate, the nano-islands of ∼30 nm diameter on the hexagonal grains are observed. These islands indicate that the growth mode changes from step-flow growth mode to Stranski-Krastanow (SK) growth mode. On the (1 1 1) MgO substrate, the large grains formed by excess adatoms covering an aperture between hexagonal grains are observed. These experimental demonstrations and controllability could provide opportunities of strain effects of Na_xCoO₂, physical properties of thin films, and growth dynamics of heterogeneous epitaxial thin films.