Impedance spectroscopy of a poly(p-phenylenevinylene)-based light-emitting diode device

A poly-p-phenylenevinylene (PPV)-based light-emitting diode (LED) device was studied by means of comprehensive ac impedance measurements. Separate regions of frequency-dependent responses, the bulk and depleted (interface) regions, with distinct electrical properties, were identified and characterized. The ac J-E characteristics revealed the space-charge limited conduction mechanism, which was specifically assigned to the depleted region. Besides, a direct estimate of the trap density in the bulk region was obtained from the applied voltage dependence of the charge concentration.     

求鳞状循环因子矩阵的极小多项式的算法

提出了任意域上鳞状循环因子矩阵 ,利用多项式环的理想的Go bner基的算法给出了任意域上鳞状循环因子矩阵的极小多项式和公共极小多项式的一种算法 .同时给出了这类矩阵逆矩阵的一种求法 .在有理数域或模素数剩余类域上 ,这一算法可由代数系统软件Co CoA4 .0实现 .数值例子说明了算法的有效性     

On the second weight of generalized Reed-Muller codes

Not much is known about the weight distribution of the generalized Reed-Muller code RM _q (s,m) when q > 2, s > 2 and m ≥ 2. Even the second weight is only known for values of s being smaller than or equal to q/2. In this paper we establish the second weight for values of s being smaller than q. For s greater than (m – 1)(q – 1) we then find the first s + 1 – (m – 1)(q–1) weights. For the case m = 2 the second weight is now known for all values of s. The results are derived mainly by using Gröbner basis theoretical methods.     

H-bases for polynomial interpolation and system solving

The H-basis concept allows, similarly to the Gröbner basis concept, a reformulation of nonlinear problems in terms of linear algebra. We exhibit parallels of the two concepts, show properties of H-bases, discuss their construction and uniqueness questions, and prove that n polynomials in n variables are, under mild conditions, already H-bases. We apply H-bases to the solution of polynomial systems by the eigenmethod and to multivariate interpolation.     

On the origin of intrinsic donors in ZnO

As-grown undoped zinc oxide (ZnO) films have been annealed in zinc-rich, oxygen-rich and vacuum ambient, and the electron concentration varied greatly after the annealing process. It decreased nearly two orders of magnitude after the sample was annealed in oxygen, while increased nearly three times after annealed in metallic zinc ambient, and increased slightly after annealed in vacuum. It was found that the variation trend of the electron concentration is always the same with the expected variation of oxygen vacancy (V_O) under the three investigated conditions, it is thus speculated that V_O may be the dominant donor source in ZnO. By supplying more oxygen during the growth process to suppress V_O, ZnO films with lower electron concentration were obtained, which verifies the above speculation.     

On the Distribution of Integral Ideals and Hecke Gr(o)ssencharacters

The author uses analytic methods to study the distribution of integral ideals and Hecke Gr(o)ssencharacters in algebraic number fields.Nowak's results on the distribution of integral ideals,and Chandrasekharan and Good's results on the distribution of Hecke Gr(o)ssencharacters are improved.     

Electron dynamics of Cs anti-bonding surface state on copper

Received: 20 September 1998     

Parallel excitation pathways in ultrafast interferometric pump-probe correlation measurements of hot-electron lifetimes in metals

Hot electron (E-E_Fermi=0.75 to 1.55 eV) lifetimes for cesiated Cu(100) and Cu(111) surfaces are measured via interferometric time-resolved two-photon photoemission with a 19-fs intensity FWHM mode locked Ti:sapphire laser at 1.55 eV. The data are analyzed using the optical Bloch equations and a laser pulse characterized in situ via surface second-harmonic generation interferometric autocorrelation. It is found that the retrieved hot-electron lifetimes are unphysically fast, and have a strong dependence on the temperature of the sample and the polarization of the laser. A simple explanation for the data is that the measured signal consists of contributions from transitions through both virtual and real intermediate states. Received: 26 July 2000 / Accepted: 8 September 2000 / Published online: 12 October 2000     

Defect reduction and surface passivation of SiO2/Si by heat treatment with high-pressure H2O vapor

Heat treatment with high-pressure H₂O vapor was applied to improve interface properties of SiO₂/Si and passivate the silicon surface. Heat treatment at 180–420 °C with high-pressure H₂O vapor changed SiO_x films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO₂ films with a Si-O-Si bonding network similar to that of thermally grown SiO₂ films. Heat treatment at 130 °C with 2.8×10⁵ Pa H₂O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiO_x/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiO_x films on the SiO₂ films formed by heat treatment at 340 °C with high-pressure H₂O vapor. The SiO_x deposition reduced the recombination velocity from 100 cm/s to 48 cm/s. Received: 1 March 1999 / Accepted: 28 March 1999 / Published online: 24 June 1999     

Crystalline Si thin-film solar cells: a review

The present review summarizes the results of research efforts in the field of crystalline silicon thin-film solar cells on foreign substrates. The large number of competing approaches can be broadly classified according to the grain size of the crystalline Si films and the doping of the crystalline absorber. Currently, solar cells based on microcrystalline Si films on glass with an intrinsic or moderately doped absorber film achieve efficiencies around 10%, whereas thin-film cells fabricated from large-grained polycrystalline Si on high-temperature-resistant substrates have efficiencies in the range of 15%. The paper discusses the limitations of various approaches and describes recent developments in the area of thin, monocrystalline Si films that may open the way towards 20% efficient thin-film Si solar cells. Received: 1 March 1999 / Accepted: 28 March 1999 / Published online: 24 June 1999