Emission Mössbauer studies of the magnetoresistive compound, La0.7Sr0.3MnO3

The magnetic behavior of the Sr_0.3 manganite is studied using a local microprobe, ⁵⁷Co. In contrast with Ca substituted manganites, a much larger fraction of the material exhibits short-range order with superparamagnetic-like behavior even at 80 K. The differences in behavior are attributed to the large mismatch between the ionic radii of La⁺³ and the divalent substituent Sr⁺², which introduces anharmonicity in local vibrations. In common with all other compounds exhibiting negative bulk magnetoresistivity, the Sr_0.3 compound also exhibits very marked softening of lattice as one approaches T_c from below. Application of an external magnetic field results in coalescing of nanosized magnetic clusters to form larger ones with better alignment of spins.     

Macroscopic quantum coherence of the Neel vector in antiferromagnetic system without Kramers' degeneracy

At low temperatures the Neel vector in a small antiferromagnetic particle can possess quantum coherence between the classically degenerate minima. In some cases, the topological term in the magnetic action can lead to destructive interference between the symmetry-related trajectories for the half-integer excess spin antiferromagnetic particle. By studying a macroscopic quantum coherence problem of the Neel vector with biaxial crystal symmetry and a weak magnetic field applied along the hard axis, we find that the quenching of tunnel splitting could take place in the system without Kramers' degeneracy. Both the Wentzel-Kramers-Brillouin exponent and the pre-exponential factors are found exactly for the tunnel splitting. Results show that the tunnel splitting oscillates with the weak applied magnetic field for both the integer and half-integer excess spin antiferromagnetic particles, and vanishes at certain values of the field. All the calculations are performed based on the two sublattices model and the instanton method in spin-coherent-state path integral. Received: 24 July 1997 / Accepted: 30 September 1997     

Magnetic,transport and microstructural properties of polycrystalline samples with nominal composition of La0.7Ca0.3Mn1−xVxO3 (0⩽x⩽0.2)

Polycrystalline samples with nominal composition of La_0.7Ca_0.3Mn_1−xV_xO₃ (0?x?0.2) sintered in air were investigated by ac susceptibility, dc magnetization, magnetoresistance (MR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and differential thermal analysis (DTA) measurements. It is found that V could not substitute for Mn to form La_0.7Ca_0.3Mn_1−xV_xO₃ phase when the samples are sintered in air. The obtained samples contain several phases such as (La, Ca)Mn_1−δO₃, LaCa₃V₃O₁₂, Mn₃O₄ phases, etc. and constitute multi-phase composites. The Curie temperature T_C and spontaneous magnetization of the composites decrease, and the resistance of the composites increases as the V content increases. The addition of V may effectively improve the low-field MR response at low temperatures due to the variation in the microstructure of the composites.     

Angular dependence of tunneling magnetoresistance in magnetic semiconductor heterostructures

Theoretical studies on spin-dependent transport in magnetic tunnel heterostructures consisting of two diluted magnetic semiconductors (DMS) separated by a nonmagnetic semiconductor (NMS) barrier, are carried in the limit of coherent regime by including the effect of angular dependence of the magnetizations in DMS. Based on parabolic valence band effective mass approximation and spontaneous magnetization of DMS electrodes, we obtain an analytical expression of angular dependence of transmission for DMS/NMS/DMS junctions. We also examine the dependence of spin polarization and tunneling magnetoresistance (TMR) on barrier thickness, temperature, applied voltage and the relative angle between the magnetizations of two DMS layers in GaMnAs/GaAs/GaMnAs heterostructures. We discuss the theoretical interpretation of this variation. Our results show that TMR of more than 65% are obtained at zero temperature, when one GaAs monolayer is used as a tunnel barrier. It is also shown that the TMR decreases rapidly with increasing barrier width and applied voltage; however at high voltages and low thicknesses, the TMR first increases and then decreases. Our calculations explain the main features of the recent experimental observations and the application of the predicted results may prove useful in designing nano spin-valve devices.     

Transmission resonances in magnetic-barrier structures

Quantum transport properties of electrons in simple magnetic-barrier (MB) structures and in finite MB superlattices are investigated in detail. It is shown that there exists a transition of transmission resonances, i.e., from incomplete transmission resonances in simple MB structures consisting of unidentical blocks, to complete transmission resonances in comparatively complex MB structures (, n is the number of barriers). In simple unidentical block arrangements in double- and triple-MB structures we can also obtain complete transmission by properly adjusting parameters of the building blocks according to k_y-value (k_y is the wave vector in y direction). Strong suppression of the transmission and of the conductance is found in MB superlattices which are periodic arrangements of two different blocks. The resonance splitting effect in finite MB superlattices is examined. It is confirmed that the rule (i.e., for n-barrier tunneling the splitting would be (n-1)-fold) obtained in periodic electric superlattices can be extended to periodically arranged MB superlattices of identical blocks through which electrons with tunnel, and it is no longer proper for electrons with k _y <0 to tunnel. Received: 18 August 1997 / Revised: 20 September 1997 / Accepted: 13 October 1997     

Effect of trivalent cation substitution for manganese upon ferromagnetism in Ln0.57Ca0.43MnO3 (Ln=Pr, Nd)

The substitution of small contents of trivalent cations for manganese in the oxides Ln_0.57Ca_0.43Mn_1−xM_xO₃ (Ln=Pr, Na) has been explored for M=Al, Ga, Fe, Cr, Sc, In. It is shown that similarly to Ba-doping, the M-doped Pr-manganites exhibit a great predisposition to ferromagnetism in a low magnetic field of 0.25 T, reaching ferromagnetic (FM) fractions of 85% for M=Ga and 100% for m=Cr, whereas in contrast only small FM fractions (∼8%) can be reached for the M-doped Nd-manganites. The great ability of both Pr and Nd manganites to exhibit ultrasharp steps at 2.5 K, at increasing magnetic field is also demonstrated. The different behaviors of the so-doped manganites are interpreted in terms of geometric effects (size of the A-sites cations and of the doping elements) and of electronic configurations and magnetic properties of the dopants.     

Rapid communicationPhotoelectron emission in femtosecond laser assisted scanning tunneling microscopy

Direct illumination of the tunneling gap in an ultrahigh vacuum scanning tunneling microscope with ultrashort pump-probe laser pulses may offer ultimate spatial and temporal resolution in surface experiments. The electronic bandwidth of the tunneling gap ( 1 THz) does not limit the time resolution. Our experiments show that multiphoton photoelectron emission from the sample limits the application of this detection scheme at high laser fluence. However, a substrate specific pump-probe effect in the photoelectron yield with femtosecond transients is observed on Tantalum and on GaAs(110) surfaces. Received: 5 November 1996     

Optimal coupled-cluster approximation for the ground-state properties of a spin-boson model

In the present work we have developed an optimal coupled-cluster approximation, which can take care of both the accuracies of the ground-state energy and the wavefunction estimates, for the ground state of a two-state system coupled to a dispersionless boson bath. This new approach is also able to give a tight upper bound to the ground-state energy of the system. Up to the fourth level of this approximation our results show excellent agreement with the numerical exact diagonalization results. In particular, our results suggest no discontinuous localization-delocalization transition of the two-state system. This is consistent with the exact result. Received: 11 March 1998 / Accepted: 23 June 1998     

Ultrathin oxide films and interfaces for electronics and spintronics

Oxides have become a key ingredient for new concepts of electronic devices. To a large extent, this is due to the profusion of new physics and novel functionalities arising from ultrathin oxide films and at oxide interfaces. We present here a perspective on selected topics within this vast field and focus on two main issues. The first part of this review is dedicated to the use of ultrathin films of insulating oxides as barriers for tunnel junctions. In addition to dielectric non-magnetic epitaxial barriers, which can produce tunneling magnetoresistances in excess of a few hundred percent, we pay special attention to the possibility of exploiting the multifunctional character of some oxides in order to realize ‘active’ tunnel barriers. In these, the conductance across the barrier is not only controlled by the bias voltage and/or the electrodes magnetic state, but also depends on the barrier ferroic state. Some examples include spin-filtering effects using ferro- and ferrimagnetic oxides, and the possibility of realizing hysteretic, multi-state junctions using ferroelectric barriers. The second part of this review is devoted to novel states appearing at oxide interfaces. Often completely different from those of the corresponding bulk materials, they bring about novel functionalities to be exploited in spintronics and electronics architectures. We review the main mechanisms responsible for these new properties (such as magnetic coupling, charge transfer and proximity effects) and summarize some of the most paradigmatic phenomena. These include the formation of high-mobility two-dimensional electron gases at the interface between insulators, the emergence of superconductivity (or ferromagnetism) at the interface between non-superconducting (or non-ferromagnetic) materials, the observation of magnetoelectric effects at magnetic/ferroelectric interfaces or the effects of the interplay and competing interactions at all-oxide ferromagnetic/superconducting interfaces. Finally, we link up the two reviewed research fields and emphasize that the tunneling geometry is particularly suited to probe novel interface effects at oxide barrier/electrode interfaces. We close by giving some directions toward tunneling devices exploiting novel oxide interfacial phenomena.     

Andreev reflection in a quantum dot coupled to ferromagnetic and superconductor leads under magnetic fields

By employing the nonequilibrium Green's function, we investigate the spin-dependent linear Andreev reflection (AR) resonant tunneling through a quantum dot connected to a ferromagnetic lead and a superconducting lead, where the magnetization direction in the ferromagnetic lead can be tuned by one. We focus our attention on the effects of the magnetic fields on the AR conductance. One high conductance peak and one low conductance peak are developed in the linear AR conductance when a stronger magnetic field is considered. The interplay between the spin-flip scattering and the magnetic fields on the AR conductance are also studied.