Broad distribution effects in sums of lognormal random variables

The lognormal distribution describing, e.g., exponentials of Gaussian random variables is one of the most common statistical distributions in physics. It can exhibit features of broad distributions that imply qualitative departure from the usual statistical scaling associated to narrow distributions. Approximate formulae are derived for the typical sums of lognormal random variables. The validity of these formulae is numerically checked and the physical consequences, e.g., for the current flowing through small tunnel junctions, are pointed out. Received 8 November 2002 / Received in final form 17 March 2003 Published online 7 May 2003     

Microfabrication and magnetoelectric properties of amorphous magnetic-tunnel-junctions with Co–Fe–B/Al–O/Co–Fe–B hardcore structure

Both single-barrier magnetic tunnel junctions (SBMTJs) and double-barrier magnetic tunnel junctions (DBMTJs) with an amorphous hardcore structure of Co₆₀Fe₂₀B₂₀/Al–O/Co₆₀Fe₂₀B₂₀ were microfabricated. A high TMR ratio of 102.2% at 4.2 K was observed in the SBMTJs after annealing at 265 °C for 1 h. High TMR ratio of 56.2%, low junction resistance-area product RS of 4.6 kΩ μm², small coercivity H_C=25 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V_1/2 greater than 500 mV at room temperature (RT) had been achieved in such Co–Fe–B SBMTJs. Whereas, high TMR ratio of 60% at RT and 89% at 30 K, low junction resistance-area product RS of 7.8 kΩ μm² at RT and 8.3 kΩ μm² at 30 K, low coercivity H_C=8.5 Oe at RT and H_C=14 Oe at 30 K, and relatively large bias-voltage-at-half-maximum TMR with the value V_1/2 greater than 1150 mV at RT had been achieved in the Co–Fe–B DBMTJs. Temperature dependence of the TMR ratio, resistance, and coercivity from 4.2 K to RT, and applied voltage dependence of the TMR ratio and resistance at RT for such amorphous MTJs were also investigated.     

The reaction πN → ππN in a meson-exchange approach

A resonance model for two-pion production in the pion-nucleon reaction is developed that includes information obtained in the analysis of pion-nucleon scattering in a meson-exchange model. The baryonic resonances Δ(1232), N^*(1440), N^*(1520), N^*(1535), and N^*(1650) are included. The model reproduces the total cross-sections up to kinetic energies of the incident pion of 400MeV and obtains the shapes of the differential cross-sections in reasonable agreement with the data.     

Resonances and final-state interactions in the reaction pp → pK+Λ

A study of the strangeness production reaction pp → pK⁺Λ for excess energies of ε≤150MeV, accessible at high-luminosity accelerator facilities like COSY, is presented. Methods to analyze the Dalitz plot distribution and angular spectra in the Jackson and helicity frames are worked out and suitable observables for extracting information on low-lying resonances that couple to the KΛ system and for determining the Λp effective-range parameters from the final-state interaction are identified and discussed. Furthermore, the chances for identifying the reaction mechanism of strangeness production are investigated.     

Intrinsic tunnelling effects in self-doped La0.89MnO3 single crystals

Transport properties of self-doped La_0.89MnO₃ single crystals with Néel temperature of T_N ≈139 K have been investigated in wide temperature range 10–300 K. Data suggests that current at low temperature is conducted through a strongly temperature-dependent, but almost bias independent channel operating in parallel with a bias controlled but temperature independent channel. The first channel is associated with transport across an insulating antiferromagnetic matrix while the latter one represents tunnel conductivity through intrinsic tunnel junctions appearing due to interruption of conducting percolating paths by phase separated insulating inclusions. Tunnel character of the conductivity manifests itself in nonlinear current-voltage characteristics and appearance of a zero-bias anomaly in the form of a prominent conductance peak in the vicinity of zero bias. Zero bias anomaly and V-shaped characteristics of the differential conductance at high voltages are ascribed to the formation of local magnetic states in the insulating region of the tunneling junction.     

Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition

(110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5×5 μm. This can be used as a new oriented Pt electrode on silicon for devices. Received: 23 January 2001 / Accepted: 27 April 2001 / Published online: 27 June 2001     

Spin-dependent tunneling in nanostructures consisting of magnetic barriers

We study the spin-dependent transport properties of the nanostructures consisting of realistic magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that, only in the nanostructures with symmetric magnetic field with respect to the magnetic-modulation direction, electrons exhibit a considerable spin-polarization. It is also shown that the degree of the electron spin polarization is greatly dependent on the ferromagnetic stripe and its position relative to the 2DEG. A much larger electron-spin polarization can be obtained by properly fabricating the ferromagnetic stripe and by adjusting its distance above the 2DEG. Received 27 December 2001 and Received in final form 13 March 2002 Published online 25 June 2002     

Spin configuration transformation in laterally coupled few-electron artificial molecules

Artificial molecules, namely laterally coupled quantum dots with a three-dimensional spherical confinement potential well of radius R and depth V ₀, were studied by the unrestricted Hartree-Fock-Roothaan (UHFR) method. By varying the distance d between the centers of the two coupled quantum dots, the transition from the strong coupling situation to the weak one is realized. Hund's rule, suitable for a single quantum dot is destroyed in certain conditions in the artificial molecule. For example, in the few-electron system of the strongly coupled quantum-dot molecule, a transformation of spin configuration has been found. Received 8 March 2002 / Received in final form 29 May 2002 Published online 17 September 2002     

Electronic temperature effects on the optical response of silver nanoparticles

The electronic temperature dependence of the optical absorption of silver nanoparticles is investigated in the framework of the time-dependent local-density approximation at finite temperature. Below the spectral region of interband transitions, we have found that the electronic temperature leads to a broadening and spectral shift of the surface plasmon resonance. The calculated differential transmission is in good agreement with recent experimental measurements obtained with time resolved pump-probe techniques.     

Dynamics of free and embedded lead clusters in intense laser fields

Lead clusters are exposed to strong femtosecond light pulses. The dependence of the recoil energy on the charge state of the atomic ion is now investigated using a new detection setup, i.e., a Thomson analyser. First results show that in contrast to laser-induced overdense plasmas at surfaces the recoil energy distribution appears much narrower. Comparing free lead clusters with lead clusters embedded in large helium droplets, the charging dynamics show distinct differences on the femtosecond time scale. In the embedded case the maximum ionization enhancement is reached earlier.