微波反应合成纳米Ba1-xZnxTi1-ySnyO3介电材料及其结构、性能研究

采用微波反应技术,合成了一系列Ba1-xZnxTi1-ySnyO3固溶体纳米粉末（0≤ x≤0.3,0≤y≤0.5),XRD物相分析和d间距一组成图证明,产品为立方晶系的完全 互溶取代固溶体,结果符合Vegard定律。TEM形貌观察,粒子为均匀球形,平均粒 径40nm。通过制陶实验,分别测定了该系列固溶体的室温介电常数、介电损失以及 介电常数随温度的变化,结果发现,采用化学方法在BaTiO3中掺入适量锌和锡,由 于掺杂离子均匀进入母体晶格,引起tc降低,室温介电常数达12000以上,介电损 耗仅为0.007。纳米粉体的烧结温度为1150℃,比传统微米级粉体的烧结温度降低 200－250℃。     

A位取代对(Ca0.61Nd0.26)TiO3陶瓷烧结特性和介电性能的影响

采用常规固相反应法,以(Ca0.61Nd0.26)TiO3体系为基体成分,研究了A位取代对(Ca0.61Nd0.26)TiO3陶瓷的烧结特性和介电性能的影响规律。结果表明:Zn,Mg的A位取代,促使(Ca0.61Nd0.26)TiO3陶瓷烧结温度从1350℃降至1250℃。Zn,Mg在一定范围内A位取代(Ca0.61Nd0.26)TiO3中的Ca可形成钙钛矿结构的固溶体,Zn、Mg最大固溶度(x(Zn),y(Mg))分别不超过0.1和0.15mol。当取代量超过固溶度后,分别形成Ca2Zn4Ti15O36和MgTi2O5第二相。随Zn和Mg取代量的增加,陶瓷介电常数(εr)和谐振频率温度系数(τf)减小。陶瓷品质因数(Qf)值随Zn取代量先增后减,而随Mg取代量增加,其Qf值一直增大。Zn,Mg最佳取代分别为x(Zn)=0.15和y(Mg)=0.25,在1250℃烧结2h,[(Ca0.85Zn0.15)0.61Nd0.26]TiO3的介电性能:εr=93.60,Qf=12454GHz,τf= 150.3ppm·℃-1,[(Ca0.75Mg0.25)0.61Nd0.26]TiO3的介电性能:εr=72.48,Qf=14622GHz,τf= 108ppm·℃-1。     

乌青铜型BaNd2Ti4O12微波介质陶瓷的电导和介电损耗

用固相反应合成了乌青铜型钛酸盐陶瓷BaNd₂Ti₄O₁₂, 并用电化学阻抗和微波介质谐振测试表征了不同热处理和钽掺杂对电导和微波介电损耗的影响. 电导率随退火气氛(空气, 氧气和氮气)的变化与缺陷反应平衡2O_O^×↔2V_O^··+O₂↑+2e'和Ti_Ti^×+e'↔Ti'_Ti随氧分压的变化一致, 表明BaNd₂Ti₄O₁₂具有n型导电性质. 在空气和氧气中退火有利于减少包括V_O^×, Ti'_Ti和弱束缚电子在内的本征缺陷因而降低电导. 而在低氧分压的氮气中进行退火处理, 增加了缺陷的浓度, 同时提高了电导率. 在空气/氧气/氮气中的退火处理对微波介电损耗没有明显的影响, 表明本征缺陷对微波介电损耗的影响可以忽略. 空气退火处理样品的电导率和微波介电损耗低于空气淬火处理的样品; 其中电导的变化与缺陷反应平衡相关, 但空气退火降低微波介电损耗可能与退火消除晶格热应力有关. 五价钽的掺杂降低了电导但增大了微波介电损耗. 本研究表明空气退火处理能有效地改善BaNd₂Ti₄O₁₂陶瓷的品质因子Q×f, 其值提高了约12%.     

A single-cell-gap transflective liquid crystal display with a vertically aligned cell

A single-cell-gap transflective liquid crystal display with a vertically aligned cell using square ring electrode is demonstrated. The top substrate has a top planar common electrode, a square ring pixel electrode is coated on the bottom substrate, while a bumpy reflector is coated under the bottom substrate. In this device, the planar common electrode and square ring pixel electrode generate a strong longitudinal electric field in the transmissive region (T region) and a weak fringe field in the reflective region (R region). As result, the T and R regions accumulate the same optical phase retardation. The simulation results show that the display exhibits reasonably low operating voltage, high transmittance and well-matched voltage-dependent transmittance and reflectance curves. Besides, fabrication process of the transflective liquid crystal display is very simple.     

基于四(3-吡啶氧亚甲基)甲烷及氰化铜螺旋链手性金属有机骨架化合物的合成及其性质研究

通过一个非手性配体和1D氰化铜链螺旋成功构建了一种新型的手性金属有机骨架:[Cu₄(CN)₄(L)₂]_n (1,L=四(3-吡啶氧亚甲基甲烷));铜(Ⅰ)和原位生成的氰基组装而生成的螺旋是左旋并且它使得金属有机框架具有手性。这是首例通过半刚性四面体配体多变的构像诱导合成独特的手性金属有机骨架化合物。此外还研究了该化合物的手性、热稳定性以及介电性质。     

三甲基氯硅烷对纳米多孔二氧化硅薄膜的修饰

以正硅酸乙酯为先驱体,采用溶胶-凝胶法,结合旋转涂胶、超临界干燥工艺在硅片上制备了纳米多孔SiO2薄膜.用三甲基氯硅烷(TMCS)对该SiO2薄膜进行了表面修饰,采用FTIR、TG-DTA、AFM和椭偏仪等方法研究了TMCS修饰前后薄膜的结构、形貌、厚度与介电常数等性能.超临界干燥后的SiO2薄膜含有Si－O－Si与Si－OR结构,呈疏水性.在空气中250 ℃以上热处理后SiO2薄膜因含有Si－OH而呈吸水性. TMCS修饰后的SiO2薄膜在温度不高于450 ℃时可保持其疏水性和多孔结构. SiO2薄膜经TMCS修饰后基本粒子和孔隙尺寸增大,孔隙率提高,介电常数可降低至2.5以下.     

三维光子晶体典型结构完全禁带的最佳参数理论分析

基于平面波展开法，理论分析了晶格结构、填充率、介电常数比等因素对fcc，diamond，woodpile三种三维光子晶体典型结构完全禁带的影响.三种结构中，fcc结构由于高对称性导致的能级简并，只适用于密堆积排列的反蛋白石结构；diamond结构非常容易产生高带隙率的完全禁带，并且可以通过调节多项参数得到所需的完全禁带；woodpile结构参数调节范围比较宽，为实验制备带来方便.对于不同的三维光子晶体结构，随着介电常数比的增大，完全禁带的宽度和带隙率也会随着增大.还发现了一些以前未引起注意的现象. 关键词： 三维光子晶体 完全禁带 介电常数比 带隙率 平面波展开法     

Full wave analysis of non-radiative dielectric waveguide modulator for the determination of electrical equivalent circuit

This paper reports the determination of electrical equivalent circuit of ON/OFF modulator in non-radiative dielectric (NRD) guide configurations at Ka-band. Schottky barrier mixer diode is used to realize this modulator and its characteristics are determined experimentally using vector network analyzer. Full wave FEM simulator HFSS is used to determine an equivalent circuit for the mounted diode and modulator in ON and OFF states. This equivalent circuit is used to qualitatively explain the experimental characteristics of modulator.      

Synthesis and properties of low‐dielectric‐constant polyimides with introduced reactive fluorine polyhedral oligomeric silsesquioxanes

A high‐performance, low‐dielectric‐constant polyimide (PI) nanocomposite from poly(amic acid) (PAA) cured with a reactive fluorine polyhedral oligomeric silsesquioxane (POSS) isomer was successfully synthesized. The features of this reactive fluorine POSS isomer [octakis(dimethylsiloxyhexafluoropropylglycidyl ether)silsesquioxane (OFG)] provided two important approaches (containing fluorine or being porous in the polymer matrix) of reducing the dielectric constant of PI. This reactive POSS isomer had an average of four epoxy groups and four fluorine groups on the POSS cage, and the epoxy groups could be cured with PAA to form a network framework of a PI/POSS nanocomposite. The PI/OFG nanocomposite had a high crosslinking density, high porosity (24.3%), high hydrophobicity, and low polarizability. These properties enhanced the thermal (glass‐transition temperature ～ 362 °C) and dielectric (dielectric constant ～2.30) properties of PI more than other POSS derivatives introduced into the PI backbone. A large number of small POSS particles (<10 nm) were embedded inside the PI matrix when the OFG content was low, whereas interconnected POSS aggregation domains were observed when the OFG content was high. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 5391–5402, 2006     

Spectral Theory of Time Dispersive and Dissipative Systems

We study linear time dispersive and dissipative systems. Very often such systems are not conservative and the standard spectral theory can not be applied. We develop a mathematically consistent framework allowing (i) to constructively determine if a given time dispersive system can be extended to a conservative one; (ii) to construct that very conservative system—which we show is essentially unique. We illustrate the method by applying it to the spectral analysis of time dispersive dielectrics and the damped oscillator with retarded friction. In particular, we obtain a conservative extension of the Maxwell equations which is equivalent to the original Maxwell equations for a dispersive and lossy dielectric medium.