Influences of nanoparticles and chain length on thermodynamic and electrical behavior of fluorine liquid crystals

Hydrogen-bonded polar nematic liquid crystal series with the general formula nOBAF (n = 7—12) is studied. The mesomorphic characterization is demonstrated through differential scanning calorimetry (DSC) and polarized optical microscopy (POM). The complexes with short alkyl chains (n=7, 8) present a wide nematic range and monotropic smectic F mesophase, whereas the longer alkyl chain (n=10—12) analogues show high melting and low clearing mesomorphic liquid crystals. The thermal range of the mesophase and the birefringence increase with chain length decreasing. Furthermore, the effect of the nanoparticles (LiNbO₃) on the thermal and the electrical behavior of 8OBAF are investigated. The presence of LiNbO₃ nanoparticles increases the conductivity and reduces the resistivity of the complex.     

Electrical, dielectric and surface wetting properties of multi-walled carbon nanotubes/nylon-6 nanocomposites

This paper reports that the multi-walled carbon nanotubes(MWCNT)/nylon-6 (PA6) nanocomposites with different MWCNT loadingshave been prepared by a simple melt-compounding method. Theelectrical, dielectric, and surface wetting properties of theCNT/PA6 composites have been studied. The temperature dependence ofthe conductivity of the CNT/PA6 composite with 10.0 wt{\%} CNTloading ($\sigma _{\rm RT} \sim 10^{-4}$ S/cm) are measured, andafterwards a charge-energy-limited tunnelling model (ln $\sigma (T)\sim T^{-1/2})$ is found. With increasing CNT weight percentage from0.0 to 10.0 wt%, the dielectric constant of the CNT/PA6composites enhances and the dielectric loss tangent increases twoorders of magnitude. In addition, water contact angles of theCNT/PA6 composites increase and the composites with CNT loadinglarger than 2.0 wt%even become hydrophobic. The obtainedresults indicate that the electrical and surface properties of thecomposites have been significantly enhanced by the embedded carbonnanotubes.     

Blue-phase liquid crystal display with high dielectric material

A blue-phase liquid crystal display (BPLCD) with low operating voltage and high transmittance is demonstrated by using a high dielectric material, which is used as an insulation layer or protrusion fixed on the pixel and common electrodes in in-plane switching (IPS) mode. The operating voltage is reduced to about 14 V and the transmittance is improved for the BPLCD with high dielectric constant protrusion. Compared with the conventional protrusion electrode structure, the proposed protrusion can make manufacturing process simple and easy because the electrode has no complex shape. The results will be significant in designing optimal BPLCDs.     

Two-dimensional function photonic crystals

In this paper, we have studied two-dimensional function photonic crystals, in which the dielectric constants of medium columns are the functions of space coordinates , that can become true easily by electro-optical effect and optical kerr effect. We calculated the band gap structures of TE and TM waves, and found the TE (TM) wave band gaps of function photonic crystals are wider (narrower) than the conventional photonic crystals. For the two-dimensional function photonic crystals, when the dielectric constant functions change, the band gaps numbers, width and position should be changed, and the band gap structures of two-dimensional function photonic crystals can be adjusted flexibly, the needed band gap structures can be designed by the two-dimensional function photonic crystals, and it can be of help to design optical devices.     

Shear Stress and Dielectric Analysis of H3PO4 Doped Polyaniline Based Electrorheological Fluid

We synthesized phosphoric acid (PA) doped polyaniline (PANI) particles (PANI‐PA) and investigated their electrorheological (ER) and dielectric characteristics when they were dispersed in silicone oil. Flow curves of the PANI‐PA based ER fluid under several applied electric field strengths were analyzed using a shear stress model. We also examined ER characteristics based on the relaxation time obtained from the dielectric spectrum.     

RPA calculations with Gaussian expansion method

The Gaussian expansion method (GEM) is applied to calculations of the nuclear excitations in the random-phase approximation (RPA). We adopt the mass-independent basis-set that is successful in the mean-field calculations. The RPA results obtained by the GEM are compared with those obtained by several other available methods in Ca isotopes, by using a density-dependent contact interaction along with the Woods–Saxon single-particle states. It is confirmed that energies, transition strengths and widths of their distribution are described by the GEM with good precision, for the 1⁻, 2⁺ and 3⁻ collective states. The GEM is then applied to the self-consistent RPA calculations with the finite-range Gogny D1S interaction. The spurious center-of-mass motion is well separated from the physical states in the E1 response, and the energy-weighted sum rules for the isoscalar transitions are fulfilled reasonably well. Properties of low-energy transitions in ⁶⁰Ca are investigated in some detail.     

THEORY OF DIELECTRIC ELASTOMERS

In response to a stimulus, a soft material deforms, and the deformation provides a function. We call such a material a soft active material （SAM）. This review focuses on one class of soft active materials： dielectric elastomers. When a membrane of a dielectric elastomer is subject to a voltage through its thickness, the membrane reduces thickness and expands area, possibly straining over 100%. The dielectric elastomers are being developed as transducers for broad applications, including soft robots, adaptive optics, Braille displays, and electric generators. This paper reviews the theory of dielectric elastomers, developed within continuum mechanics and thermodynamics, and motivated by molecular pictures and empirical observations. The theory couples large deformation and electric potential, and describes nonlinear and nonequilibrium behavior, such as electromechanical instability and viscoelasticity. The theory enables the finite element method to simulate transducers of realistic configurations, predicts the efficiency of electromechanical energy conversion, and suggests alternative routes to achieve giant voltage-induced deformation. It is hoped that the theory will aid in the creation of materials and devices.     

Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

This paper describes the structural properties and electrical characteristics of thin Dy₂O₃ dielectrics deposited on silicon substrates by means of reactive sputtering. The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Dy₂O₃ dielectrics annealed at 700 °C exhibit a thinner capacitance equivalent thickness and better electrical properties, including the interface trap density and the hysteresis in the capacitance-voltage curves. Under constant current stress, the Weibull slope of the charge-to-breakdown of the 700 °C-annealed films is about 1.6. These results are attributed to the formation of well-crystallized Dy₂O₃ structure and the reduction of the interfacial SiO₂ layer.     

Li-defect interactions in electron-irradiated n-type silicon by EPR measurements

Single crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ～10¹⁷/cm², irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li-one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spinof ½. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40 °K followed by annealing at higher temperatures show that both EPR defects described above begin to form at about 200 °K and begin to decrease at about 275 °K-just as does the 250 °K reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) complex in O-containing Si, and a (Li-interstitial) complex in O-free Si.