On different implementations of spatial evolutionary games

Evolutionary spatial 2×2 games between unconditional agents are analysed introducing several variants of cellular automata (CA).     

Field emitters with low turn on electric field based on carbon fibers

Field emitters of vertical carbon fibers on a silicon substrate are fabricated by catalytic chemical vapor deposition. After an ageing process of 150 min, field emission measurement of the fibers is carried out in a vacuum chamber with a base pressure of 5.0 × 10⁻⁴ Pa. The experimental results display that field emission performance of the carbon fibers depends strongly on the vacuum level during the experiments. After the field emission measurement, damage to the carbon fiber field emitters is observed from the scanning electron microscopic images.     

Synthesis of carbon nanotubes by CVD: Effect of acetylene pressure on nanotubes characteristics

The effect of acetylene partial pressure on the structural and morphological properties of multi-walled carbon nanotubes (MWCNTs) synthesized by CVD on iron nanoparticles dispersed in a SiO₂ matrix as catalyst was investigated. The general growing conditions were: 110 cm³/min flow rate, 690 °C synthesis temperature, 180 Torr over pressure and two gas compositions: 2.5% and 10% C₂H₂/N₂. The catalyst and nanotubes were characterized by HR-TEM, SEM and DRX. TGA and DTA were also carried out to study degradation stages of synthesized CNTs. MWCNTs synthesized with low acetylene concentration are more regular and with a lower amount of amorphous carbon than those synthesized with a high concentration. During the synthesis of CNTs, amorphous carbon nanoparticles nucleate on the external wall of the nanotubes. At high acetylene concentration carbon nanoparticles grow, covering all CNTs’ surface, forming a compact coating. The combination of CNTs with this coating of amorphous carbon nanoparticles lead to a material with high decomposition temperature.     

GeSbTe deposition for the PRAM application

GeSbTe (GST) chalcogenide thin films for the phase-change random access memory (PRAM) were deposited by an atomic layer deposition (ALD) process. New precursors for GST thin films made with an ALD process were synthesized. Among the synthesized precursors, Ge(N(CH₃)₂)₄, Sb(N(CH₃)₂)₄, and Te(i-Pr)₂ (i-Pr = iso-propyl) were selected. Using the above precursors, GST thin films were deposited using an H₂ plasma-assisted ALD process. Film resistivity abruptly changed after an N₂ annealing process above a temperature of 350 °C. Cross-sectional scanning electron microscope (SEM) photographs of the GST films on the patterned substrate with aspect ratio of 7 shows that the step coverage is about 90%.     

Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica-alumina, and silica supports

The deposition of noble metal particles and films by atomic layer deposition (ALD) has recently gained interest in the fields of catalysis and microelectronics. However, there is little information on the mechanisms governing the reactions of noble metals with high surface area supports. In this work, iridium(III) acetylacetonate was deposited from gas phase onto alumina, silica-alumina, and silica supports to gain insight into the reaction mechanisms. According to elemental analysis and infrared spectroscopy, ligand exchange reaction between iridium acetylacetonate and surface OH groups took place on all substrate surfaces, but the iridium deposition on alumina and silica-alumina appeared to be hindered by sterical effects of the acetylacetonate ligands. Part of the iridium on silica was in metallic form. To reduce the content of iridium, reactive sites of the support surfaces were blocked with H-acetylacetonate (2,4-pentanedione). The blocking reduced the iridium content by more than 90% on alumina but by only 30-50% on silica-alumina. The attempted blocking had almost no effect on silica as expected. According to the results of this work, ALD can provide a feasible method for preparing iridium catalyst with reasonable iridium loadings.     

Atomic layer deposition of PbZrO3 thin films

In this paper, we report on the preparation of lead zirconate films for the first time using atomic layer deposition in an attempt to investigate some of the film properties and also to evaluate possible use of the precursor combination to prepare more complex lead titanate zirconate. In the depositions tetraphenyl lead (Ph₄Pb) was used as the lead and zirconium 2,2,6,6-tetramethyl-3,5-heptadionato (Zr(thd)₄) as the zirconium precursor, while ozone was used as the oxygen source. Film growth, stoichiometry and quality were studied using different pulsing ratios at deposition temperatures of 275 and 300 °C. According to X-ray diffraction, the crystalline perovskite phase was observed when films deposited on SrTiO₃(1 0 0) were annealed at 600 °C. Surface roughness was reduced for lead deficient films as well as in annealed samples.     

Controlled synthesis of monodispersed superparamagnetic nickel ferrite nanoparticles

Nickel ferrite nanoparticles have been prepared through a gentle chemistry route, starting from iron nitrate, nickel nitrate and stearic acid. The nickel ferrite crystalline phase, the particle size and shape, and the homogeneity of the resulting nanoparticles were studied by X-ray diffraction and transmission electron microscopy. Fourier transform infrared techniques were used to study the composition characteristics of the as-prepared sample. Magnetization studies at room temperature showed superparamagnetic behavior for the nanoparticles. Magneto-optic rotation studies at different wavelengths of He-Ne lasers reveal non-linear behavior.     

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.     

Long-time stabilization of porous silicon photoluminescence by surface modification

We present results on the photoluminescence (PL) properties of porous silicon (PS) as a function of time. Stabilization of PL from PS has been achieved by replacing silicon-hydrogen bonds terminating the surface with more stable silicon-carbon bonds. The composition of the PS surface was monitored by transmission Fourier transform infrared (FTIR) spectroscopy at intervals of 1 month in ageing time up to 1 year. The position of the maximum PL peak wavelength oscillates between a blue-shift and a red-shift in the 615-660 nm range with time.     

Electronic Curves Crossing in Methyl Iodide by Spin--Orbit Ab Initio Calculation

An ab initio investigation of electronic curve crossing in a methyl iodide molecule is carried out using spin-orbit multiconfigurational quasidegenerate perturbation theory. The one-dimensional rigid potential curves and optimized effective curves of low-lying states, including spin-orbit coupling and relativistic effects, are calculated. The spin-orbit electronic curve crossing between ^3Qo＋ and ^1Q1, and the shadow minimum in potential energy curve of ^3Qo＋ at large internuclear distance are found in both sets of the curves according to the present calcu- lations. The crossing position is in the range of Re-1 = 0.2370 3：0.0001 nm. Comparisons with other reports are presented.