Symmetry classification of quasi-linear PDE’s containing arbitrary functions

We consider the problem of performing the preliminary “symmetry classification” of a class of quasi-linear PDE’s containing one or more arbitrary functions: we provide an easy condition involving these functions in order that nontrivial Lie point symmetries be admitted, and a “geometrical” characterization of the relevant system of equations determining these symmetries. Two detailed examples will elucidate the idea and the procedure: the first one concerns a nonlinear Laplace-type equation, the second a generalization of an equation (the Grad–Schlüter–Shafranov equation) which is used in magnetohydrodynamics.     

Generalized Einstein manifolds

A Finslerian manifold is called a generalized Einstein manifold (GEM) if the Ricci directional curvature R(u,u) is independent of the direction. Let F⁰(M, g_t) be a deformation of a compact n-dimensional Finslerian manifold preserving the volume of the unitary fibre bundle W(M). We prove that the critical points g₀ F⁰(g_t) of the integral I(g_t) on W(M) of the Finslerian scalar curvature (and certain functions of the scalar curvature) define a GEM. We give an estimate of the eigenvalues of Laplacian Δ defined on W(M) operating on the functions coming from the base when (M, g) is of minima fibration with a constant scalar curvature H admitting a conformal infinitesimal deformation (CID). We obtain λ ≥ H/(n − 1) (Δf = λf). If M is simply connected and λ = H/(n − 1), then (M, g) is Riemannian and is isometric to an n-sphere. We first calculate, in the general case, the formula of the second variationals of the integral I (g_t) for G = g₀, then for a CID we show that for certain Finslerian manifolds, I″(g₀) > 0. Applications to the gravitation and electromagnetism in general relativity are given. We prove that the spaces characterizing Einstein-Maxwell equations are GEMs.     

蛋白质空间结构预测的一种优化模型及算法

用理论方法预测蛋白质结构有两个难点,第一是要有一个合理的势函数,第二是要有一个有效的寻优方法找到势函数的全局极小点,本文采用联合残基力场建立了蛋白质空间结构预测模型,然后用我们给出的一种改进模拟退火算法搜索势函数的全局极小点,对脑啡肽的空间结构进行了预测和分析。     

广义变系数模型的Bayesian B样条估计

提出了广义变系数模型函数系数的一种新的估计方法．我们用B样条函数逼近函数系数,不具体选择节点的个数,而是节点个数取均匀的无信息先验,样条函数系数取正态先验,用Bayesian模型平均的方法估计各个函数系数．这种估计方法一个主要特点是允许各个函数系数所需节点个数的后验分布不同,因此允许不同函数系数使用不同的光滑参数．另外,本文还给出了Bayesian B样条估计的计算方法,并通过模拟例子,说明广义变系数模型的函数系数可以由Bayesian B样条估计方法得到很好的估计．     

一个择一定理及对广义凸规划的应用

本文在实线性空间中得出了广义凸函数的择一定理 ,利用这一定理 ,我们获得广义凸规划的最优性条件     

Luminescence of CsBr:Eu films grown by liquid-phase epitaxy

By liquid-phase epitaxy from an aqueous alcoholic solution, we have obtained films of the well-known storage phospor CsBr:Eu, and we have studied their cathodoluminescence and photoluminescence (PL) spectra compared with the undoped CsBr films. We have established that the structure of the photoluminescence centers of the CsBr:Eu films when excited by laser radiation in the absorption band of the Eu²⁺ ions (λ = 337 nm) includes Eu²⁺-V_Cs isolated dipole centers and CsEuBr₃ aggregate centers, and also luminescence centers based on inclusions of hydroxyl group OH⁻ with the corresponding emission bands in the 440 nm, 520 nm, and 600 nm regions. We have studied the dependence of the spectra and the intensity of the photoluminescence for CsBr:Eu films on annealing temperature in air at 423–483 K, compared with analogous dependences for CsBr:Eu single crystals obtained from the melt. We have shown that annealing the films at T = 423–463 K leads to rapid formation of CsEuBr3 aggregate luminescence centers, while for T > 473 K thermal degradation of these centers occurs. We conclude that the observed differences between the photoluminescence spectra of CsBr:Eu films and CsBr:Eu single crystals may be due to additional doping of the films with OH⁻ ions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 191–194, March–April, 2006.     

退火处理对磁控溅射制备LaCoO_3薄膜性能的影响

采用磁控溅射法在硅衬底上制备了LaCoO_3(LCO)薄膜,研究了退火温度对LCO薄膜组织结构、表面形貌及热电特性的影响,并利用X射线衍射仪、原子力显微镜(AFM)、激光导热仪等对LCO薄膜的晶体结构、表面形貌、热扩散系数等进行测量与表征.结果表明:退火温度对LCO薄膜的结晶度、晶粒尺寸和薄膜表面形貌都有较大影响;退火前后LCO薄膜的热扩散系数都随温度的升高而减小,且变化速率逐渐减缓; LCO薄膜的热扩散系数随退化温度的升高先增大后减小.LCO薄膜经过700℃退火后得到最佳的综合性能,其薄膜表面致密、平整,结晶质量最好,热扩散系数最小,热电性能最好.     

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.     

Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene

We chose pentacene as a hole injection layer (HIL) to fabricate the high performance blue fluorescent organic light-emitting devices (OLEDs). We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120 °C. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120 ℃ annealed pentacene film and n-doped electron transport layer (ETL) presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m² at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.     

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.