单原子Ge助剂修饰Cu(111)晶面上CO2加氢制甲醇的机理研究

针对CO₂热催化转化制甲醇过程中CO₂吸附、活化较困难及副产物较多的问题,提出采用单原子Ge助剂修饰Cu(111)晶面的解决思路,通过密度泛函理论(DFT)计算研究了CO₂在Ge-Cu(111)晶面上加氢合成甲醇的反应机理。结果表明,单原子Ge助剂的电子调控增加了与其相邻的 Cu 原子的电子云密度,使 CO₂分子在含 Ge 活性界面上的吸附能力显著增强:CO₂在 Ge-Cu(111)晶面上的吸附能约为Cu(111)晶面的1.5倍,约为Pd改性Cu(111)晶面的2.4倍,进而使逆水煤气变换(RWGS)反应路径速控步骤的活化能降低了近 20 kJ·mol^-1,同时衍生出 3条生成甲醇的 RWGS新路径;此外,Ge-Cu(111)晶面上甲酸盐路径由于速控步骤活化能大幅上升而被禁阻,进而CO及烃类等副产物选择性大幅降低,Ge-Cu(111)晶面上CO₂加氢制甲醇选择性升高。     

ITQ-13分子筛合成及酸性的DFT理论计算研究

以氢氧化已烷双铵(R(OH)2)和溴化六甲双铵(HMBr2)为模板剂分别合成了ITQ-13、B-ITQ-13、Al-ITQ-13分子筛,采用XRD、SEM-EDX、N2吸附-脱附、FT-IR、MAS NMR等手段对合成的分子筛进行表征,比较了两种模板剂合成的ITQ-13分子筛的性质,以溴化六甲双铵(HMBr2)为模板剂,在碱性加晶种的条件下,反应3~10 d合成出了ITQ-13以及含杂原子B、Al的ITQ-13分子筛,降低了合成的成本.以溴化六甲双铵为模板剂合成的ITQ-13晶貌有块状和球形针状堆积混合晶貌组成,孔道宽,晶粒因堆积形成的介孔居多.量子力学中的密度泛函理论(DFT)计算Ge、B、Al同晶取代Si在ITQ-13分子筛9个不同T位的分布,T5位对于ITQ-13分子筛的特殊骨架结构形成具有重要作用,对于骨架的电荷平衡以及几何约束力都有重要作用.Al原子容易替代的位置是位于九元环和十元环孔口相交处的T6、T7位.     

Sm_(0.5)Sr_(0.5)CoO_3阴极氧还原动力学

利用极化、交流阻抗技术考察了担载于La0.9Sr0.1Ga0.8Mg0.2O3(LSGM)电解质上的Sm0.5Sr0.5CoO3-La0.8Sr0.2Ga0.8Mg0.15Co0.05O3(SSC-LSGMC5)复合阴极的氧还原反应动力学.在SSC-LSGMC5阴极氧还原反应的阻抗谱中可以观察到明显的两个半圆.高频环的电导与氧分压无关,低频环的电导正比于氧分压的0.5次方.并且低频环的氧分压级数随着反应温度的降低而减小,可能对应于吸附氧原子的扩散过程.SSC-LSGMC5极化曲线与经典的Butler-Volmer方程吻合.阴、阳极的电荷转移系数均为1左右,交换电流密度的氧分压级数为1/4,对应于电荷转移过程.实验结果显示SSC-LSGMC5上的氧还原反应机制随反应条件的不同而发生变化.     

LixNi0.5Co0.5O2的态密度计算及电化学性能研究

>为获得综合性能更好的锂离子二次电池正极材料, 分析了Co掺杂对Li_xNiO₂电化学性能的影响. 采用密度泛函DFT理论对Li_xNiO₂和Li_xNi_0.5Co_0.5O₂的平均放电电压和态密度进行了计算. 同时, 用共沉淀法制备了Li_xNiO₂和Li_xNi_0.5Co_0.5O₂锂离子二次电池正极材料, 并对其进行了XRD结构分析和恒流充放电测试. 实验和计算结果表明: 随锂离子嵌入正极(电池放电), 电池的电压逐渐降低, 材料的态密度峰向低能量方向移动; 与Li_xNiO₂相比, Li_xNi_0.5Co_0.5O₂的电压平台相对较高(当0.25≤x≤0.5), 而且在Li^＋嵌/脱时, Li_xNi_0.5Co_0.5O₂的结构变化相对较小; Co离子的掺入, 减小了NiO₆八面体的畸变度, 使材料的电化学稳定性得以提高. 在钴掺杂镍酸锂体系中, NiO₆和CoO₆具有相互的稳定作用.     

三种化学方法合成K0.5Bi0.5TiO3粉体的机理比较

采用溶胶-凝胶法、水热法和溶胶-凝胶-水热法三种化学方法合成K_0.5Bi_0.5TiO₃ (KBT)无铅压电陶瓷粉体. 用X射线衍射(XRD)分析产物的结构, 用扫描电镜(SEM)和透射电镜(TEM)观察产物的形貌. 实验结果表明, 三种化学方法均可获得纯钙钛矿相KBT粉体, 但不同工艺获得的粉体在形貌和生成机制上有很大的不同. 溶胶-凝胶法属高温固相扩散机制, 需要700 ℃以上温度煅烧才可获得KBT纯相, 且粉体颗粒度大、团聚严重. 水热法符合溶解-结晶机制, 生长出四方形的KBT纳米片. 溶胶-凝胶-水热法利用了凝胶团聚体空间链状结构的模板作用, 通过原位结晶机制生长出KBT纳米线.     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

激光金等离子体的电子离子碰撞电离速率系数

电子离子碰撞电离过程在超组态碰撞辐射(SCROLL)模型中真实模拟非局域热动力学平衡(non-LTE)高Z材料Au激光等离子体M带谱5f-3d跃迁中各种复杂离子的电离态特性,诸如离子的平均电离度和电荷态分布是一个主要过程.基于准相对论扭曲波玻恩交换近似,采用组态平均的方法,从头计算了金M带类铁金离子-类锗金离子的电子离子碰撞电离速率系数,其中电离截面的高能行为由Bethe系数决定.结果表明:在"神光Ⅱ"实验装置诊断的电子温度～2keV,电子密度～6×1021cm-3范围内,这些参数有利于使用超组态碰撞辐射模型拟Au的激光等离子体M带细致谱5f-3d跃迁的平均电离度和电荷态分布.     

On the corporate votes and their relation with daisy models

The distribution of votes of one of the corporate parties in Mexico during elections of 2000, 2003 and 2006 is analyzed. After proper normalization and unfolding, the agreement of the vote distributions with those of daisy models of several ranks is good. These models are generated by retaining each r+1 level in a sequence which follows a Poisson distribution. Beyond the fact that rank 2 daisy model resembles the distribution of the quasi-optimal distances for the Traveling Salesman Problem, no clear explanation exists for this behavior, but the agreement is not fortuitous and the possibility of a universal phenomena for corporate vote is discussed.