Growth of Fe on Ge(1 1 1) at room temperature studied by X-ray photoelectron diffraction

The growth of ultrathin Fe films of various coverages on Ge(1 1 1) at room temperature using molecular beam epitaxy (MBE) was studied via X-ray photoelectron diffraction (XPD or XPED) together with low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). All experimentally observed XPD patterns suggested local order structures of the Fe layers for all thicknesses studied. The short-range order of the resulting structures was found to be enhanced for thinner layers whereas the long-range order was gradually lost with increasing Fe thicknesses. At a very low coverage of 0.8 Å Fe and Ge tend to react to the partly ordered structure in which Fe atoms were located in local environments similar to those for higher Fe coverages. Comparison of theoretical and experimental XPD patterns, along with XPS results, showed that intermixing between Fe and Ge occurred during the pseudomorphic growth with a stacking fault near the interface for all Fe coverages under study. Nevertheless, small percentage of domains without the stacking fault was also found to coexist with those with the stacking fault by performing a quantitative analysis of a reliability factor R of the Fe2p pattern for 5.4 Å. The orientation changes of the Ge2p and Ge3d XPD patterns with Fe thickness were unambiguously explained in terms of their different dependencies on the overlayer thickness due to the different inelastic mean free path lengths used in the simulations. Also, Fe got increasingly enriched in the grown layers with increased Fe coverage. The resulting structures and intermixing are discussed in detail.     

Effects of E2 and El-E2 Interference on Coulomb Dissociation of 19C

We investigate the effects of higher order multipole transitions, in particular electric quadrupole （E2） and El-E2 interference, on the Coulomb dissociation of 19 C within the framework of the first order eikonal approximation. The sensitivity of the total Coulomb breakup cross section and the longitudinal momentum distribution of the core fragment to these effects are checked. The breakup occurs predominately through the dipole transition and the contribution of E2 transition to the total cross section is found to be within the range from 1 to 3% of that of El. It is further observed that the El-E2 interference term contributes nothing to the integrated cross section. On the other hand, the longitudinal momentum distribution is observed to be insensitive to the E2 transition while the El-E2 interference introduces a small asymmetry in its shape.     

Novel solutions to the combined dispersion equation

In this Letter, the combined dispersion equation was solved by the sub-equation method. It is shown that the combined dispersion equation with the special parameters can be solved and many novel solutions will derived in terms of Jacobi elliptic functions, where some known solutions will be recovered when the modulus arrives its limiting value.     

STUDIES ON THE MESOZOIC MARGINAL ARC SYSTEM OF THE SOUTHEAST COAST AND TAIWAN IN CHINA

The southeast coastal Zhejiang, Fujian, Guangdong provinces and Taiwan in China comprised an important area in ancient Asia where the Yenshanian continental margin magmatic arc well developed in the late Mesozoic time. It is believed that the oceanic trench and subduction zone are situated on the east side of the Central Range in Taiwan. It seems unlikely that the so-called Hercynian-Indosinian ancient island arc folded system would have occurred in this region.     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.     

Effect of geometry on magnetization distortion in closed-circuit magnetic measurements

The effect of specimen geometry on magnetization distortion in closed-circuit measurements is reported in this letter. The degree of the distortion increases as the ratio of length to diameter (L/D) of specimen decreases, and the distortion can reduce the magnetization values as much as 42% when the applied magnetic field is 24 kOe and the L/D is 0.28. The type of magnetic material also affects the distortion. Although the phenomenon seems to be similar to the “image effect” that occurs in open-circuit measurements, reports of this effect in closed-circuit measurements have not been found in the literature. Further research effort, including 3D computer modeling, for understanding this magnetic phenomenon is underway and will be reported later.     

Interface control of high-k gate dielectrics on Ge

Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO₂ interface and ALD high-k layers, with an interface state density D_it ∼ 2 × 10¹¹ cm⁻² eV⁻¹. Another approach is with an epi-Si/SiO₂ interface, resulting in similar D_it. Hysteresis and V_th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control.     

Beyond the N = 50 shell closure: High-spin excitations of 87Kr and ground-state spin of 87Br

The ⁸⁷Kr nucleus has been produced as fission fragment in the fusion reaction ¹⁸O + ²⁰⁸Pb at 85MeV bombarding energy and studied with the Euroball IV array. High-spin states of this neutron-rich isotope have been identified for the first time. Its level scheme has been obtained up to 6.3MeV excitation energy and spin I ∼ 23/2ℏ. Its structure is interpreted by analogy with those of the heavier isotones. The proposed configurations involve both proton and neutron excitations from several sub-shells located close to the Fermi levels, particularly νd_5/2, πp_3/2f_5/2 and πg_9/2. Moreover, a revised spin value of 5/2^- for the ⁸⁷Br ground state is proposed.     

Open dynamic behaviour of financial markets

Open dynamic behaviour of financial markets with internal interactions between agents and with external “fields” from other systems are investigated using the approach of Grossman and Stiglitz for inefficient markets, and Keynes for interference of the market using physics of finance (referred to hereafter as phynance). The simulation results indicate that the NYSE data analyzed in Plerou, V. et al., Nature 421, 130 (2003) can be fitted by an equation of order parameter Φ and local deviation R of type: -(R+0.03) Φ+ 0.6 Φ³ + 0.02 = 0, which is shown to be in remarkable agreement with Plerou's data.     

退火处理对W:Bi4Ge3O12和Bi12GeO20晶体发光性能的影响

通过提拉法制备了W:Bi4 Ge3 O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等.W:Bi4 Ge3 O12的可见光发光强度比纯Bi4 Ge3 O12有所增强,而且N2中退火处理对W:Bi4Ge3O12发光有进一步增强作用.Bi12GeO20在N2中退火处理后在745 nm附近有发光...