掺杂的Bi4Ge3O12晶体的近红外发光性能

生长了Mg、Ca离子掺杂(提拉法)和Cl离子掺杂(坩埚下降法)的Bi₄Ge₃O₁₂(BGO)晶体,测试了晶体样品的吸收谱、光致发光谱和发光衰减时间等。这些掺杂的BGO晶体的可见光发光比纯BGO有所减弱,但在808 nm和980 nm激光二极管(LD)激发下出现了纯BGO几乎没有的近红外发光,归因于改变了能级的Bi离子或可能出现的低价态Bi离子。掺杂对近红外发光的影响跟掺杂离子价态有关,同价态的掺杂离子对近红外发光的影响相差不大。     

Kinetic market models with single commodity having price fluctuations

We study here numerically the behavior of an ideal gas like model of markets having only one non-consumable commodity. We investigate the behavior of the steady-state distributions of money, commodity and total wealth, as the dynamics of trading or exchange of money and commodity proceeds, with local (in time) fluctuations in the price of the commodity. These distributions are studied in markets with agents having uniform and random saving factors. The self-organizing features in money distribution are similar to the cases without any commodity (or with consumable commodities), while the commodity distribution shows an exponential decay. The wealth distribution shows interesting behavior: gamma like distribution for uniform saving propensity and has the same power-law tail, as that of the money distribution, for a market with agents having random saving propensity.     

Crystallographic report: 1‐[4‐(2‐Thienyl)phenyl]germatrane

In the title compound, germanium is penta‐coordinated and adopts a trigonal bipyramidal geometry. The (2‐thienyl)phenyl group and the nitrogen atom each occupy an apical position with a transannular N→Ge bond distances of 2.247(4) and 2.219(4) Å for the two independent molecules. Copyright © 2005 John Wiley & Sons, Ltd.     

Exact solutions for vibrational levels of the Morse potential via the asymptotic iteration method

Exact solutions for vibrational levels of diatomic molecules via the Morse potential are obtained by means of the asymptotic iteration method. It is shown that the numerical results for the energy eigenvalues of⁷Li₂ are all in excellent agreement with those obtained before. Without any loss of generality, other states and other diatomic molecules could be treated in a similar way.     

Structural analysis of the c(4 × 2) reconstruction in Si(0 0 1) and Ge(0 0 1) surfaces by low-energy electron diffraction

The c(4 × 2) structures in (0 0 1) surfaces of Si and Ge have been studied by low-energy electron diffraction (LEED). Using a proper cleaning method for the Si surface, we were able to observe clear c(4 × 2) LEED patterns up to incident energy of ∼400 eV as well as the Ge surface. Extensive experimental intensity-voltage curves allowed us to optimize the asymmetric dimer model up to the eighth layer (including the dimer layer) in depth in the dynamical LEED calculation. Optimized structural parameters are almost the same for the Si and Ge except for the height of the buckled-up atom of the asymmetric dimer. For the Ge surface, the structural parameters are in excellent agreement with those obtained by a previous theoretical calculation. The tilt angle and bond length of the dimer are 18 ± 1 (19 ± 1)° and 2.4 ± 0.1 (2.5 ± 0.1) Å for the Si(0 0 1) (Ge(0 0 1)), respectively.     

Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (1 1 8) surface

In this paper, we present a photoluminescence (PL) study of Si/Ge/SiGe/Si structures grown by gas source molecular beam epitaxy on an (1 1 8) undulated surface with various Ge coverage. Nucleation and growth of Ge films is obtained by the Stranski–Krastanov mechanism. The influence of the substrate orientation on the changeover 2D–3D growth mode is investigated. Furthermore, we show the use of growing an SiGe wetting layer to control the uniformity of the Ge island size. The PL signal related to the Ge islands is found to be highly dependent of the power excitation and is observed up to room temperature.     

Transmission resonances in magnetic-barrier structures

Quantum transport properties of electrons in simple magnetic-barrier (MB) structures and in finite MB superlattices are investigated in detail. It is shown that there exists a transition of transmission resonances, i.e., from incomplete transmission resonances in simple MB structures consisting of unidentical blocks, to complete transmission resonances in comparatively complex MB structures (, n is the number of barriers). In simple unidentical block arrangements in double- and triple-MB structures we can also obtain complete transmission by properly adjusting parameters of the building blocks according to k_y-value (k_y is the wave vector in y direction). Strong suppression of the transmission and of the conductance is found in MB superlattices which are periodic arrangements of two different blocks. The resonance splitting effect in finite MB superlattices is examined. It is confirmed that the rule (i.e., for n-barrier tunneling the splitting would be (n-1)-fold) obtained in periodic electric superlattices can be extended to periodically arranged MB superlattices of identical blocks through which electrons with tunnel, and it is no longer proper for electrons with k _y <0 to tunnel. Received: 18 August 1997 / Revised: 20 September 1997 / Accepted: 13 October 1997     

Generalized Supersymmetric Perturbation Theory

Using the basic ingredient of supersymmetry, a simple alternative approach is developed to perturbation theory in one-dimensional non-relativistic quantum mechanics. The formulae for the energy shifts and wavefunctions do not involve tedious calculations which appear in the available perturbation theories. The model applicable in the same form to both the ground state and excited bound states, unlike the recently introduced supersymmetric perturbation technique which, together with other approaches based on logarithmic perturbation theory, are involved within the more general framework of the present formalism.     

Numerical simulation for the flow inside V-shapes using grid generation

In this paper, we determined a numerical solution of the Navier-Stokes equations for the flow of incompressible fluid inside the contraction geometry. The governing equations are written in the vorticity-stream function formulations. The numerical solution is based on a technique of automatic numerical generation of a curvilinear coordinate system by transforming the governing equation into the computational plane. The transformed equations are approximated using central differences and solved simultaneously by the alternating direction implicit method and successive over relaxation iteration method.     

GaInP2/GaAs/Ge叠层太阳电池材料的低压MOCVD外延生长

本文采用自制的LP-MOCVD设备,外延生长出GaInP₂/GaAs/Ge叠层太阳电池结构片,对电池材料进行了X射线衍射测试分析.另外,采用二次离子质谱仪测试了电池结构的剖面曲线.用此材料做出的叠层太阳电池,AMO条件下光电转换效率η=13.6%,开路电压V_oc=2230mV,短路电流密度J_sc=12.6mA/cm².